A5053328924- ZnO doping and properties
- Copper-based nanomaterials and applications
- Gas Sensing Nanomaterials and Sensors
- Chalcogenide Semiconductor Thin Films
- Ga2O3 and related materials
- Quantum Dots Synthesis And Properties
- Solid-state spectroscopy and crystallography
- GaN-based semiconductor devices and materials
- nanoparticles nucleation surface interactions
- Semiconductor materials and devices
- Advanced Semiconductor Detectors and Materials
- Solidification and crystal growth phenomena
- Electronic and Structural Properties of Oxides
- Innovative Teaching Methods
- Additive Manufacturing Materials and Processes
- Electron and X-Ray Spectroscopy Techniques
- Online and Blended Learning
- Science Education and Pedagogy
- Transition Metal Oxide Nanomaterials
- Advanced Thermoelectric Materials and Devices
- Nonlinear Optical Materials Research
- Acoustic Wave Resonator Technologies
- Optical Coatings and Gratings
- Plasmonic and Surface Plasmon Research
- Nanowire Synthesis and Applications
Universitat de València
2012-2024
We have investigated the cathodoluminescence (CL) emission and Raman spectra along individual ZnO nanorods grown by a catalyst-free method. The spatial correlation between CL defect related modes permits establishing correspondence non-radiative recombination centres (NRRCs) defects responsible for 275 cm−1 band. According to this relation, NRRCs in these are tentatively associated with complexes of zinc interstitials.
ZnO nanoflowers were synthesized by the hydrothermal process at an optimized growth temperature of 200 °C and a growth/reaction time 3 h. As-prepared characterized x-ray diffraction, scanning electron microscopy, UV–visible Raman spectroscopy. X-ray diffraction studies reveal that as-synthesized flower-like nanostructures are highly crystalline with hexagonal wurtzite phase preferentially oriented along plane. The average length (234–347 nm) diameter (77–106 nanorods constituting structure...
We report above-bandgap ordinary optical properties of ε-phase GaSe single crystal. Reference-quality pseudodielectric function ⟨ε(E)⟩=⟨ε1(E)⟩+i⟨ε2(E)⟩ and pseudorefractive index ⟨N(E)⟩=⟨n(E)⟩+i⟨k(E)⟩ spectra were measured by spectroscopic ellipsometry from 0.73to6.45eV at room temperature for the light polarization perpendicular to optic axis (E⃑⊥ĉ). The ⟨ε⟩ spectrum exhibited several interband-transition critical-point structures. Analysis second-energy derivatives calculated numerically...
A significant part of the present and future optoelectronic devices lies on thin multilayer heterostructures. Their optical properties depend strongly strain, being essential to knowledge stress level optimize growth process. Here structural microstructural characteristics sub-micron a -ZnO epilayers (12 770 nm) grown r -sapphire by metal–organic chemical vapour deposition are studied. Morphological studies have been made using scanning electron microscopy high-resolution X-ray diffraction....
This work presents the results of study structural, substructural and optical properties Zn2SnO4 nanoparticles (NPs) films. NPs synthesized by hydrothermal method during 28 h were chosen to form a nanoink from which films obtained spraying solution it on glass substrates. Obtained annealed in Argon atmosphere at Ta = (250–500) °C for 30 min 60 remove organic impurities optimize film's physical properties. Since choice mineralizer determines number important characteristics nanoparticles,...
Self-assembled ZnO quantum dots (QDs) have been obtained on different substrates by using the atmospheric spray pyrolysis methodology under well-defined growth conditions. The evolution of size and density QDs as a function precursor concentration, temperature, spraying time rate has studied. analysis process reveals that mono layer isolated grows over thin (lesser than 10 nm) continuous wetting ZnO. were characterized scanning electron microscopy, transmission selected area diffraction,...
We report on the growth and microstructure analysis of high Cd content ZnCdO/ZnO multiple quantum wells (MQW) within a nanowire. Heterostructures consisting ten with widths from 0.7 to 10 nm are demonstrated, show photoluminescence emissions ranging 3.03 1.97 eV. The thicknesses ≦̸2 have radiative efficiencies compared thickest ones, consistent presence confinement. However, nanometric profile along heterostructures shows diffusion ZnCdO well ZnO barrier. This phenomenon modifies band...
In spite of the remarkable properties CdO, there are only a few reports on CdO nanostructures, especially isolated NPs. this paper, we analyze growth nanoparticles (NPs) 0.5° miscut r-sapphire substrates by using spray pyrolysis methodology in its classical configuration. A systematic study has been performed to optimize parameters such as precursor concentration, time, rate and temperature obtain NPs (size: 6–10 nm 35–100 depending conditions). The shows control over size density that can...
GaTe samples of p-type have been investigated by analyzing the photoluminescence (PL) response for different excitation intensities at energies higher than band gap. The PL intensity variation recombination peaks as a function has measured and fitted power law. results show some particular features that do not appear in other III-V II-VI compound semiconductors. These can be interpreted means dynamics carriers band-gap edges. expressions coefficients associated with rates relations between...
II–VI oxides ternary alloys have attracted considerable interest of the scientific community due to possibility modulating their interesting optoelectronic properties. Despite this interest, MgCdO has been poorly studied. In work, by using metal organic chemical vapor deposition method at low pressure, we analyzed synthesis thin films alloy. Thus, for a fixed metal–organic precursors content, change from Mg1–xCdxO (Mg-rich phase) Cd1–xMgxO (Cd-rich induced when decreasing growth temperature....
Emission spectra of GaTe single crystals in the range 1.90–1.38 eV have been analyzed at different temperatures and excitation intensities by photoluminescence, photoluminescence excitation, selective photoluminescence. A decrease band gap energy with an increase temperature was obtained from redshift free exciton recombination peak. The longitudinal optical phonons found to be 14±1 meV. value 1.796±0.001 for 10 K determined, bound 18±0.3 activation thermal quenching main peaks ones relating...
We report the component E⃑⊥ĉ of pseudodielectric-function tensor ⟨ε(E)⟩=⟨ε1(E)⟩+i⟨ε2(E)⟩ γ-phase single-crystal InSe, obtained from 1.5 to 9.2 eV by vacuum-ultraviolet spectroscopic ellipsometry with sample at room temperature. Overlayer artifacts were reduced as far possible measuring fresh surfaces prepared cleavage. Accurate critical-point energies observed structures a combined method spectral analysis.
A detailed optical characterization by means of micro Raman and cathodoluminescence spectroscopy catalyst-free ZnO nanorods grown atmospheric-metal organic chemical vapour deposition has been carried out. This allowed correlating the growth conditions, in particular precursors partial-pressures time, with properties nanorods. It shown that a high Zn supersaturation can favor incorporation nonradiative recombination centers, which tentatively be associated ZnI-related defects....
CdO thin films have been grown on a-plane (110), c-plane (0001), r-plane (012) and m-plane (100) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations the structural properties analyzed means X-ray diffraction, including θ-2θ scans, pole figures rocking curves. (111), (001) (110) are found a-, r-, m-sapphire respectively, while deposited exhibit an orientation in which no low-index crystal plane is parallel to sample surface....