A5066893683- Graphene research and applications
- Carbon Nanotubes in Composites
- Topological Materials and Phenomena
- 2D Materials and Applications
- Quantum and electron transport phenomena
- Molecular Junctions and Nanostructures
- Perovskite Materials and Applications
- Advanced Condensed Matter Physics
- Force Microscopy Techniques and Applications
- Surface and Thin Film Phenomena
- Mechanical and Optical Resonators
- MXene and MAX Phase Materials
- Physics of Superconductivity and Magnetism
- Plasmonic and Surface Plasmon Research
- Organic Electronics and Photovoltaics
- Diamond and Carbon-based Materials Research
- Nanowire Synthesis and Applications
- Thermal Radiation and Cooling Technologies
- Photonic and Optical Devices
- Advanced Memory and Neural Computing
- Chalcogenide Semiconductor Thin Films
- Fullerene Chemistry and Applications
- Thermal properties of materials
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
ARC Centre of Excellence in Future Low-Energy Electronics Technologies
2017-2025
Monash University
2016-2025
Australian Research Council
2017-2025
Australian Regenerative Medicine Institute
2014-2024
Virginia Tech
2023
University of Wollongong
2022
Australian National University
2021
Korea Advanced Institute of Science and Technology
2021
UNSW Sydney
2020
University of Maryland, College Park
2008-2017
Semiconducting carbon nanotube transistors with channel lengths exceeding 300 microns have been fabricated. In these long transistors, carrier transport is diffusive and the resistance dominates transport. Transport characteristics are used to extract field-effect mobility (79 000 cm2/Vs) estimate intrinsic (>100 at room temperature. These values exceed those for all known semiconductors, which bodes well application of nanotubes in high-speed single- few-electron memories,...
Single-walled carbon nanotubes (SWNTs) have emerged as a very promising new class of electronic materials. The fabrication and properties devices based on individual SWNTs are reviewed. Both metallic semiconducting found to possess electrical characteristics that compare favorably the best materials available. Manufacturability issues, however, remain major challenge.
Junctions consisting of two crossed single-walled carbon nanotubes were fabricated with electrical contacts at each end nanotube. The individual identified as metallic (M) or semiconducting (S), based on their two-terminal conductances; MM, MS, and SS four-terminal devices studied. MM junctions had high conductances, the order 0.1 e(2)/h (where e is electron charge h Planck's constant). For an MS junction, nanotube was depleted junction by nanotube, forming a rectifying Schottky barrier. We...
We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e., a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution tunneling images presence strong spatially dependent perturbation, which breaks hexagonal lattice symmetry graphitic lattice. Structural corrugations partially conform underlying oxide substrate. These effects are obscured or modified on processed with...
Irradiation of graphene on ${\mathrm{SiO}}_{2}$ by 500 eV Ne and He ions creates defects that cause intervalley scattering as is evident from a significant Raman $D$ band intensity. The defect gives conductivity proportional to charge carrier density, with mobility decreasing the inverse ion dose. decrease 4 times larger than for similar concentration singly charged impurities. minimum decreases values lower $4{e}^{2}/\ensuremath{\pi}h$, theoretical value free scattering. Defected shows...
We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics measure charge carrier mobility in a four-probe configuration. For multilayer SiO2, the is 30–60 cm2/Vs, relatively independent of thickness (15–90 nm), most devices exhibit unipolar n-type behavior. In contrast, PMMA shows increasing with thickness, up to 470 cm2/Vs (electrons) 480 (holes) at ∼50 nm. The dependence points long-range dielectric bulk mobility.
We use electrostatic force microscopy and scanned gate to probe the conducting properties of carbon nanotubes at room temperature. Multiwalled are shown be diffusive conductors, while metallic single-walled ballistic conductors over micron lengths. Semiconducting have a series large barriers conduction along their length. These measurements also used contact resistance locate breaks in nanotube circuits.
Ultrathin crystals of the layered transition-metal dichalcogenide MoS2 (semiconducting) and TaS2 (metallic) were obtained by mechanical peeling or chemical exfoliation techniques electrically contacted using electron-beam lithography. The devices showed high field-effect mobility in tens cm2∕Vs an on/off ratio higher than 105. remained metallic despite fabrication process enhancement superconducting transition temperature disappearance charge density wave phase anomaly at low temperature.
A high-mobility (9000 cm2/V·s) semiconducting single-walled nanotube transistor is used to construct a nonvolatile charge-storage memory element operating at room temperature. Charges are stored by application of few volts across the silicon dioxide dielectric between and substrate, detected threshold shift field-effect transistor. The high mobility allows observation discrete configurations charge corresponding rearrangement single or electrons. These states may be reversibly written, read,...
We reduce the dimensionless interaction strength alpha in graphene by adding a water overlayer ultrahigh vacuum, thereby increasing dielectric screening. The mobility limited long-range impurity scattering is increased over 30%, due to background constant enhancement leading reduced of electrons with charged impurities. However, carrier-density-independent conductivity short-range impurities decreased almost 40%, screening potential conduction electrons. minimum nearly unchanged, canceling...
We report the discovery of room temperature in-plane ferroelectricity in van der Waals In 2 Se 3 with β′ phase.
The two-fold valley degeneracy in two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) (Mo,W)(S,Se)2 is suitable for "valleytronics", the storage and manipulation of information utilizing degree freedom. conservation luminescent photon helicity these 2D crystal monolayers has been widely regarded as a benchmark indicator charge carrier polarization. Here we perform helicity-resolved Raman scattering TMDC atomic layers. In drastic contrast to luminescence, dominant...