A5062389937- Phase-change materials and chalcogenides
- Chalcogenide Semiconductor Thin Films
- Transition Metal Oxide Nanomaterials
- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Silicon Nanostructures and Photoluminescence
- Photonic and Optical Devices
- Nanowire Synthesis and Applications
- Liquid Crystal Research Advancements
- Nonlinear Optical Materials Studies
- Photonic Crystals and Applications
- Quantum Dots Synthesis And Properties
- Perovskite Materials and Applications
- Solid-state spectroscopy and crystallography
- Advanced Fiber Laser Technologies
- Thermal properties of materials
- Semiconductor Quantum Structures and Devices
- Advanced Cellulose Research Studies
- Lignin and Wood Chemistry
- Nonlinear Optical Materials Research
- Material Science and Thermodynamics
- Biofuel production and bioconversion
- Advanced Semiconductor Detectors and Materials
- Magnetic properties of thin films
- Thin-Film Transistor Technologies
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2016-2025
Université Grenoble Alpes
2016-2025
CEA LETI
2016-2025
CEA Grenoble
2016-2025
Institut polytechnique de Grenoble
2013-2023
Université Joseph Fourier
2009-2014
Centre National de la Recherche Scientifique
1989-2014
Laboratoire National des Champs Magnétiques Intenses
2014
Institut Nanosciences et Cryogénie
2008-2011
Laboratoire des Sciences de l’Information et de la Communication
2006-2010
Abstract Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown outstanding properties, which has led to their successful use for a long time in optical memories (DVDs) and, recently, non-volatile resistive memories. The latter, known PCM or random access (PCRAMs), are the most promising candidates among emerging memory (NVM) technologies replace current FLASH at CMOS technology nodes under 28 nm. PCMs exhibit fast and reversible phase transformations between...
Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently source of real technological breakthrough field data storage memories. This was achieved because successful 3D integration so-called OTS selector devices with innovative phase-change memories, both based on materials. paves way for class memories as well neuromorphic circuits. We elucidate mechanism behind by new...
Abstract Two chemical bleached pulps were treated with a crude enzyme mixture in the presence of HgCI2, (1 mM). Such treatment inhibited endo-cellulases. Xylans were- thus subjected to selective in-situ hydrolysis. The enzyme-treated car. be compared slightly beaten pulps. modified fibers show external fibrillation and reveal strong beatability. Therefore, decrease energy demand can gained papermaking process. A reduction fiber intrinsic strength is, however, observed mainly due hydrolysis...
Abstract Van der Waals layered GeTe/Sb 2 Te 3 superlattices (SLs) have demonstrated outstanding performances for use in resistive memories so‐called interfacial phase‐change memory (iPCM) devices. SLs are made by periodically stacking ultrathin GeTe and Sb crystalline layers. The mechanism of the resistance change iPCM devices is still highly debated. Recent experimental studies on grown molecular beam epitaxy or pulsed laser deposition indicate that local structure does not correspond to...
The past decade has seen the explosion of experimental results on nanowires grown by catalyzed mechanisms. However, few are known their electronic properties especially influence surfaces and catalysts. We demonstrate an optical method how a curious electron−hole thermodynamic phase can help to characterize volume surface recombination rates silicon (SiNWs). By studying liquid dynamics as function spatial confinement, we directly measured these two key parameters. velocity passivated SiNWs...
In this paper, we investigate the impact of Ge-enrichment coupled to N- or C-doping in Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Sb Te xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> based materials on low-resistance state (LRS SET) performance combined with high-resistance (HRS RESET) high-temperature data retention (HTDR) Phase-Change Memories (PCM). These innovative have been integrated state-of-the-art memory cell...
The crystallization mechanisms of prototypical GeTe phase-change material thin films have been investigated by in situ scanning transmission electron microscopy annealing experiments. A novel sample preparation method has developed to improve quality and stability during annealing, enabling quantitative analysis live recording phase change events. Results show that for an uncapped 100 nm thick layer, exposure air after fabrication leads composition changes which promote heterogeneous...
Abstract Thanks to their unique optical properties Ge–Sb–S–Se–Te amorphous chalcogenide materials and compounds offer tremendous opportunities of applications, in particular near mid-infrared range. This spectral range is for instance high interest photonics or sensors. Using co-sputtering technique compound targets a 200 mm industrial deposition tool, we show how by modifying the structure GeSb w S x Se y Te z thin films one can significantly tailor linear nonlinear properties. Modelling...
Abstract Driving a spin‐logic circuit requires the production of large output signal by spin‐charge interconversion in spin‐orbit readout devices. This should be possible using topological insulators, which are known for their high efficiency. However, high‐quality insulators have so far only been obtained on small scale, or with scale deposition techniques that not compatible conventional industrial processes. The nanopatterning and electrical spin injection into these materials also proven...
Herein, the linear and nonlinear optical properties, together with remarkable thermal stability structural properties of thin films nitrogen‐doped GeSe 1− x Te chalcogenide materials, are unveiled. These alloys obtained by reactive magnetron cosputtering technique in a 300 mm wafer industrial tool, they promising candidates for high‐temperature nonvolatile resistive memories due to unprecedented crystallization temperatures among all known congruent phase‐change materials (PCMs). Besides,...
Phase change materials for reconfigurable photonic integrated circuits Pierre Noé, Benoît Cluzel, Stéphane Malhouitre, and Charbonnier, discuss phase circuits. Phase-change (PCMs) have gained increasing interest over the past decade their potential in applications. This article reviews properties, key advantages competing technologies, challenges limiting widespread adoption.
In this letter, we show efficient electrical spin injection into a SiGe based p-i-n light emitting diode from the remanent state of perpendicularly magnetized ferromagnetic contact. Electron is carried out through an alumina tunnel barrier Co/Pt thin film exhibiting strong out-of-plane anisotropy. The electron polarization then analyzed circular emitted light. All measurements are performed without external applied magnetic field, i.e., in states. as function field closely traces...
For the first time, we present a Phase Change Memory (PCM) device with an optimized Ge-rich GeSbTe (GST) alloy integrated on 12Mb test vehicle. We confirm that PCM can guarantee high data retention in extended temperature range and provide understanding of thermal stability two programmed states. show how elemental distribution reaches equilibrium at core storage element after electrical activation cell, which relates to strong opposition against crystallization RESET state. also highlight...
Ageing of the amorphous phase chalcogenide change materials is characterized by a large increase their resistivity with time. This phenomenon, known as resistance drift and commonly attributed to structural relaxation, nature which remains unknown, has until now hindered development ultra-high multilevel storage devices. The origin GeTe thin films studied here measurements grazing incidence x-ray absorption spectroscopy (GIXAS). local order around Ge atoms investigated at K-edge on a-GeTe...
In this paper we present the engineering of a non-volatile 1S1R memory based on Phase-Change Memory cell (PCM), consisting in GeN/Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Sb Te xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> layer, stacked with GeSe-based Ovonic Threshold Switching selector device (OTS). We optimize and analyze separately two devices, propose for first time an innovative reading strategy cross point device,...
Thermal transport properties bear a pivotal role in influencing the performance of phase change memory (PCM) devices, which PCM operation involves fast and reversible between amorphous crystalline phases. In this paper, we present systematic experimental theoretical study on thermal conductivity GeTe at high temperatures involving from to upon heating. Modulated photothermal radiometry (MPTR) is used experimentally determine both boundary resistances are accurately taken into account for...
Abstract Laser interaction with solids is routinely used for functionalizing materials' surfaces. In most cases, the generation of patterns/structures key feature to endow materials specific properties like hardening, superhydrophobicity, plasmonic color‐enhancement, or dedicated functions anti‐counterfeiting tags. A way generate random patterns, by means wrinkles on surfaces resulting from laser melting amorphous Ge‐based chalcogenide thin films, presented. These similar fingerprints, are...
GeTe/Sb 2 Te 3 superlattices (SLs) obtained by sputtering are integrated in phase‐change memory (PCM) devices with a “wall structure”. The high structural quality of SLs deposited on TiN or SiN x layers, used as metallic bottom heater and dielectric layer PCM devices, is established X‐ray diffraction, for as‐grown after an annealing corresponding to the maximum thermal budget during integration process. Scanning transmission electron microscopy (STEM) images within cells confirm that SL...
In this paper, we investigate the impact of Sb and N doping in Se-rich GeSe based Ovonic Threshold Switching (OTS) selector devices, targeting crossbar memory applications. Through physico-chemical analysis electrical characterization demonstrate that allows low threshold voltage switching operations, while improves OFF state resistance stability devices. Thus, are able to an endurance up 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
The outstanding properties of chalcogenide phase-change materials (PCMs) led to their successful use in innovative resistive memory devices where the material is switched between its amorphous and crystalline phases. However, PCMs are easily oxidized at interfaces. Oxidation detrimental device performances. In particular, it reduces data retention time since crystallize a lower temperature than nonoxidized ones. aim this study investigate how oxidation affects crystallization process...
We study by time-resolved low temperature photoluminescence (PL) experiments of the electronic states silicon nanowires (SiNWs) grown gold catalyzed chemical vapor deposition and passivated thermal SiO(2). The typical recombination line free carriers in gold-catalyzed SiNWs (Au-SiNWs) is identified studied experiments. demonstrate that intrinsic Auger governs dynamic dense e-h plasma generated inside NW. In a few tens nanoseconds after pulsed excitation, density initial system rapidly...
In this paper, a detailed investigation of the electrical performances Phase-Change Memory test devices integrating carbon-doped Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Sb Te xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> (named GST-C) is reported. PCM with 5% carbon atomic content yields more than 50% current reduction compared to reference GST devices, programming window widely superior two orders magnitude and cycling...
Doping chalcogenide phase change materials was shown to improve the stability of amorphous at high temperature and strongly increase crystallization temperature. In this work, we use $ab$ initio molecular dynamics together with Fourier transform infrared spectroscopy address stabilization GeTe doped nitrogen carbon in phase. The comparison between simulation experimental results allows in-depth understanding mechanisms. inclusion C N leads an frequency vibrational modes a lowering boson peak...