A5053194542- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Electronic and Structural Properties of Oxides
- Phase-change materials and chalcogenides
- Silicon Nanostructures and Photoluminescence
- Chalcogenide Semiconductor Thin Films
- Integrated Circuits and Semiconductor Failure Analysis
- Nanowire Synthesis and Applications
- Transition Metal Oxide Nanomaterials
- CCD and CMOS Imaging Sensors
- Neuroscience and Neural Engineering
- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Liquid Crystal Research Advancements
- Thin-Film Transistor Technologies
- Neural dynamics and brain function
- Advanced Neural Network Applications
- Molecular Junctions and Nanostructures
- Analytical Chemistry and Sensors
- Parallel Computing and Optimization Techniques
- Anodic Oxide Films and Nanostructures
- Neural Networks and Reservoir Computing
- Conducting polymers and applications
META Health
2022-2025
Meta (United States)
2024
REALITY Publishing (United States)
2022
Samsung (South Korea)
2021
Meta (Israel)
2021
IBM Research - Zurich
2021
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2010-2019
CEA Grenoble
2010-2019
Université Grenoble Alpes
2010-2019
CEA LETI
2010-2019
In this letter, we present a study on the electrical behavior of phase-change memories (PCMs) based GeTe active material. PCMs show, first, extremely rapid SET operation (yielding gain more than one decade in energy per bit with respect to standard GST PCMs), second, robust cycling, up 1 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> , 30-ns and RESET stress time, third, better retention at high temperature PCMs. These results,...
In this paper we clarify for the first time correlation between endurance, window margin and retention of Resistive RAM. To aim, various classes RRAM (OXRAM CBRAM) are investigated, showing high up to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> cycles or 300°C retention. From principle calculations, analyze conducting filament composition technologies, extract key features. We then propose an analytical model calculate dependence...
We investigate in detail the effects of metal electrodes on switching performance and conductive filament (CF) stability HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based RRAM. The current- voltage characteristics devices exhibit different electrodedependent RESET profiles which we attempt to clarify. With insight from experimental data, employ first-principles calculations have a better microscopic understanding devices. study...
In this paper, we propose a thorough experimental and theoretical investigation of memory-cell structures employing discrete-trap type storage nodes, using either natural nitride traps or semiconductor nano-crystals. thus operating with small finite number electrons. A detailed account static dynamic charging/discharging phenomena occurring in these devices is given, based on bias-, time-, temperature-dependent measurements. comprehensive interpretation results proposed by means physical...
We study in detail the impact of alloying HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> with Al (Hf xmlns:xlink="http://www.w3.org/1999/xlink">1_x</sub> xO xmlns:xlink="http://www.w3.org/1999/xlink">2+x</sub> ) on oxide-based resistive random access memory (RRAM) (OxRRAM) thermal stability through material characterization, electrical measurements, and atomistic simulation. Indeed, migration oxygen atoms inside dielectric is at...
In this paper, we present an alternative approach to perform spike sorting of complex brain signals based on spiking neural networks (SNN). The proposed architecture is suitable for hardware implementation by using RRAM technology the synapses whose low latency (< 1μs) enable real-time sorting. This offers promising advantages conventional techniques brain-computer interface and prosthesis applications. Moreover, ultralow power consumption network (nW range) may design autonomous implantable...
Abstract Phase change memory can provide a remarkable artificial synapse for neuromorphic systems, as it features excellent reliability and be used an analog memory. However, this approach is complicated by the fact that crystallization amorphization differ radically: realized in very gradual manner, similarly to synaptic potentiation, while process tends abrupt, unlike depression. Addressing non‐biorealism of requires system‐level solutions have considerable energy cost or limit generality...
In this work, the impact of Ti electrodes on electrical behaviour HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based RRAM devices is conclusively clarified. To aim, with Pt, TiN and have been fabricated (see Fig. 1). We first provide several experiments to clearly demonstrate that switching driven by creation-disruption a conductive filament. Thus, role TiN/Ti explained modeled based presence...
We investigate the electronic properties of HfO2 grain boundaries employing a simple Σ5 (310)/[001] boundary model based on cubic phase. Our calculations show emergence unoccupied defect states 0.4 eV below conduction band due to under-coordination certain Hf ions in boundary. They also that migration metal interstitials such as and Ti is energetically favorable, turning region metallic. This scenario may create leakage paths poly-crystalline or serve mechanism resistive random access memories.
Through ab initio calculations, we propose that the conductive filaments in Pt/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Pt resistive random access memories are due to HfO xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> suboxides, possibly tetragonal, where x ≤ 1.5. The electroforming process is initiated by a continuous supply of oxygen Frenkel defect pairs through an electrochemical process. accumulation vacancies leads...
For the first time, memory devices with optimized high density (2E12#/cm/sup 2/) LPCVD Si nanocrystals have been reproducibly achieved and studied on an extensive statistical basis (from single cell up to 1 Mb test-array) under different programming conditions. An original experimental theoretical analysis of threshold voltage shift distribution shows that serious potential push scaling NOR NAND flash at least 35 nm 65 nodes, respectively.
Abstract The missing link : Ferrocene and porphyrin monolayers are tethered on silicon surfaces with short (see picture, left) or long (right) linkers. Electron transfer to the substrate is faster for a linker. magnified image derivatives anchored Si(100) through either two‐carbon 11‐carbon two tether lengths obtained by using different grafting procedures: single‐step hydrosilylation used linker, whereas linker multistep process involving 1,3‐dipolar cycloaddition conducted, which affords...
In this paper, we investigate the impact of Ge-enrichment coupled to N- or C-doping in Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Sb Te xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> based materials on low-resistance state (LRS SET) performance combined with high-resistance (HRS RESET) high-temperature data retention (HTDR) Phase-Change Memories (PCM). These innovative have been integrated state-of-the-art memory cell...
In this paper, we investigate in depth Forming, SET, and Retention of conductive-bridge random-access memory (CBRAM). A kinetic Monte Carlo model the CBRAM has been developed considering ionic hopping chemical reaction dynamics. Based on inputs from ab initio calculations physical properties materials, offers simulation both Forming/SET Data operations. It aims to create a bond between physics at atomic level device behavior. From experimental results obtained decananometric devices, propose...
In this paper, we examine the problem of drift low-resistance state (LRS) in phase change memories based on C or N doped and undoped Ge-rich Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Sb Te xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> . A novel procedure, named R-SET technique, is proposed to boost SET speed these innovative materials by overcoming decrease crystallization caused enrichment. The technique allows, at same...
Both CMOS scaling and NEMS sensor devices converge to the same type of sub 100 nm objects. This opens new fields application for IC chips integrating both complex signal treatment very highly sensitive sensing functionalities.
Based on the material analysis of SiN layers presented in part I this paper, we develop accurate atomistic and electrical models for silicon nitride (SiN)-based nonvolatile memory devices, taking into account candidate defects responsible effect. Our points out role hydrogen atoms Si dangling bonds trapping properties films with different stoichiometries. The provide a comprehensive picture describing energy level occupation number SiN. model coupled results, first time, demonstrates ability...
The commercialization of Phase-Change Memories (PCM), based on the well-known GST compound, have been recently started, tailored for consumer applications. Despite other excellent performances (i.e. low-power, scalability,...), data retention is assured up to 85°C, still limited automotive market segment. Alternative active material able comply with stringent requirements applications should possibly exhibit higher crystallization temperature (T <sub...
In this work, for the first time at our knowledge, improvement of chalcogenide-based CBRAM performance and reliability by Sb doping GeS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> electrolyte is presented. An original analysis, based on in-depth physico-chemical characterization, device electrical measurements, empirical model principle calculations, shown. We argue that optimized ~10% in allows to achieve SET speed 30ns 2.2V (i.e....
Data retention is one of the main issues affecting nonvolatile memory reliability due to critical single-cell internal dimension scaling down. In this paper an extensive investigation floating-gate charge presented. We argue that time, namely log(t/sub R/), varies linearly with temperature T rather than 1/T as commonly assumed, yielding a drastic reduction in extrapolated time-to-failure. The experimental evidence new "T Model" proved by means several results. physical consistency shown...
We present a detailed study of the growth Si quantum dots (Si QDs) by low pressure chemical vapor deposition on alumina dielectric deposited atomic layer deposition. The QDs density is very high, 1012 cm−2, for mean diameter between 5 and 10 nm. Al2O3/Si QD stacks have been integrated in memory devices as granular floating gate. demonstrate good charge storage data retention characteristics.
This work presents a thorough comparative assessment of undoped GST and GeTe active phase-change (PC) materials for application to embedded memory devices (in particular consumer automotive products). The material screening qualification is performed through optical reflectivity 4-probes resistivity measurements. Electrical performances are then investigated tests lance-cell analytical PC cells. Reset current densities comparable, while data-retention at high- temperature significantly...