A5067813127- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Electronic and Structural Properties of Oxides
- Political Theory and Influence
- Transition Metal Oxide Nanomaterials
- European Political History Analysis
- Neuroscience and Neural Engineering
- Historical Economic and Legal Thought
- Linguistics and Discourse Analysis
- Machine Learning and ELM
- Rousseau and Enlightenment Thought
- Radiology practices and education
- Phase-change materials and chalcogenides
- Magnetic and transport properties of perovskites and related materials
- Copper Interconnects and Reliability
CEA Grenoble
2016-2019
Institut polytechnique de Grenoble
2016-2019
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2016-2019
Université Grenoble Alpes
2016-2019
CEA LETI
2016-2019
Centre National de la Recherche Scientifique
2017
Laboratoire des Technologies de la Microélectronique
2017
Sorbonne Université
1999
In this paper we clarify for the first time correlation between endurance, window margin and retention of Resistive RAM. To aim, various classes RRAM (OXRAM CBRAM) are investigated, showing high up to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> cycles or 300°C retention. From principle calculations, analyze conducting filament composition technologies, extract key features. We then propose an analytical model calculate dependence...
Abstract Here, the impact of copper and oxygen vacancy balance in filament composition as a key factor for oxide‐based conductive bridge random access memories (hybrid resistive (HRRAMs)) performances is investigated. To this aim, several RRAM technologies are studied using various layers top electrodes. Material analyses allow to highlight hybrid aspect HRRAM filament. Density functional theory simulations used extract microscopic features differences from material point view. Integrated...
In this paper, programming operations are optimized for low energy consumption and short latency time applications in RRAM kb arrays. Origin of (role pulse's time, current voltage SET RESET operations) is quantified on HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> oxide based technology. Specific patterns evaluated to reduce memory devices. Innovative circuit with the fly switching detection proposed, allowing down single pJ operation large
In this work, we address Resistive RAM (RRAM) variability. To aim, investigate various RRAM technologies (Oxide and Conductive Bridging RAM), integrated on kb 1T1R arrays. Impact of variability is evaluated discussed for features: window margin, switching speed, consumption, retention endurance. Solutions are proposed in order to improve overall performances. Optimized programming schemes discussed. Importance controlling the memory operation energy reliability put evidence.
In this paper, we investigate RRAM endurance improvement by optimizing programming energy on HfO2/Ti OXRAM 1T1R kb arrays. SET and RESET patterns are optimized with current of 50μA, to minimize the provided system, maintaining sufficient widow margin resistance distribution tails. Impact both pattern window is addressed. Programming scheme based ramp voltage allows improve maximum about 2 decades, insure stable median at 10 million cycles maintain 2σ after one 50μA.
In this paper, we investigate the link between various resistive memory (RRAM) electrical characteristics: endurance, window margin (WM), and retention. For purpose, several RRAMs are characterized using layers bottom electrodes. By focusing on one technology optimizing programming conditions (current, voltage, time), establish a tradeoff endurance WM. Then, by changing stack, demonstrate correlation plus marging improvement retention degradation. Studying last feature from material point of...
Conductive filament formation and composition in Oxide-based Bridge Random Access Memory (CBRAM) are investigated. To this end, Al2O3/Cu-based CBRAM is electrically characterized studied. Current-voltage characteristics exhibit different forming behaviors depending on device polarization exposing the charged species involved during process. In order to get more insights at microscopic level, ion diffusion investigated depth by first-principles calculations. We study point defects Al2O3 which...
We present a novel study on the impact of forming stage RRAM reliability multi-Kbit array. First we show how dictates CF radius and impacts V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">set</sub> distribution even after long cycling. Then low frequency noise, in particular Random Telegraph Noise (RTN), is directly linked to stage. find that as current decreases, if smaller level number RTN appears, it creates larger pick-to-pick noise. This...
In this paper, we address endurance reliability of resistive RAM at array level. To aim, Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> based Conductive Bridging (CBRAM) kb arrays are studied. Maximum number cycles the memory can sustain is statistically analyzed. Impact SET and RESET conditions thickness on distributions discussed. Finally, gradual degradation mechanism discussed...
In this paper we present the recent advances in understanding of microscopic mechanisms driving resistive switching ReRAM devices using ab initio theoretical methods. We highlight complex interplay between interface reactions and charge injection generation oxygen Frenkel pairs during forming step. Energy barrier calculations suggest that formation/destruction conductive filament can be due to movements vacancies composing or interaction with atoms released from metal electrode.
Introduction Resistive random access memory (RRAM) technologies have experienced an increasing interest as next generation non-volatile devices. Thanks to their promising characteristics, RRAM are believed become a good choice for Storage Class Memory (SCM) [1-3]. Indeed, nowadays, due popularity of cloud storage and mobile devices, it is urgent develop lower energy consuming devices with high speed, density low cost. On the other hand, they can be integrated in BEOL CMOS logic, strongly...
Abstract The Resistive RAM memories are among the most promising technologies opening new perspectives beyond current FLASH memory characteristics [1]. Several options compatible with a CMOS integration exist imposing constraints in term of electrode materials and dielectric layers. Indeed, many tested since few years actual literature shows wide dispersion very encouraging results. In same time theoretical effort to simulate model RRAM essential features has rapidly grown. By sustaining...
The development of Resistive RAM (RRAM) devices requires a challenging selection process materials in order to exceed the current FLASH memory technology. We review here some RRAM options thanks ab initio simulations. Based on science and thermodynamics, calculations done DFT (density functional theory), carefully suited experimental context, are able explain essential mechanisms at heart operations like Forming SET/RESET steps.
La fondation du droit chez Rousseau et Kant : cet intitule est deja, semble-t-il, porteur d'un point de vue : parler « fondation » au singulier, n'est-ce pas des l'abord prendre parti contre le jugement Philonenko, pour qui tout rapprochement entre Kant tient la fable ? On pourrait toutefois legitimer en s'appuyant sur les frequents temoignages reconnaissance philosophique a l'egard Rousseau. Il apparait plus que deux philosophes mobilisent pri...