A5058083321- Phase-change materials and chalcogenides
- Chalcogenide Semiconductor Thin Films
- Semiconductor materials and devices
- Nonlinear Optical Materials Studies
- Copper Interconnects and Reliability
- Liquid Crystal Research Advancements
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Electronic Packaging and Soldering Technologies
- Metal and Thin Film Mechanics
- Glass properties and applications
- 3D IC and TSV technologies
- Advancements in Photolithography Techniques
- Semiconductor materials and interfaces
- Nanofabrication and Lithography Techniques
- Laser Material Processing Techniques
- Silicone and Siloxane Chemistry
- Advanced Surface Polishing Techniques
- Metallurgical and Alloy Processes
- Advanced ceramic materials synthesis
- Electron and X-Ray Spectroscopy Techniques
- Electromagnetic Compatibility and Noise Suppression
- Photonic and Optical Devices
- Intermetallics and Advanced Alloy Properties
STMicroelectronics (France)
2006-2025
STMicroelectronics (India)
2022
STMicroelectronics (Switzerland)
2003-2012
University of Vienna
1998
Laboratoire de Chimie Moléculaire
1998
Centre National de la Recherche Scientifique
1998
For the first time we propose a 28nm FDSOI e-NVM solution for automotive micro-controller applications using Phase Change Memory (PCM) based on chalcogenide ternary material. A complete array organization is described exploiting body biasing capability of Fully Depleted Silicon On Insulator (FDSOI) transistors. Leveraging triple gate oxide integration with high-k metal (HKMG) stack, true 5V transistor high analog performance has been demonstrated. Reliable PCM 0,036um <sup...
Among the phase-change materials, Ge-rich GeSbTe (GST) alloys are of considerable interest as they offer a much higher thermal stability than their congruent contenders, desirable characteristic for embedded digital memories and neuromorphic devices. Up to now, mechanisms by which such crystallize progressively switch from one resistivity state other remain unclear very controversial. Using in situ synchrotron X-ray diffraction during isothermal annealing advanced transmission electron...
This study explores laser‐induced crystallization and amorphization processes in thin films of Ge‐rich GST (GGST), a tailored phase change material (PCM), monitored situ using synchrotron X‐ray diffraction. GGST's high temperature makes it promising for embedded memory applications. Experiments employed an 800 nm femtosecond laser source, varying fluence pulse parameters to induce transitions. Key findings include fluence‐dependent thresholds crystallizing Ge GST, along with precise control...
Among many phase change materials, Ge‐rich GeSbTe (GST) alloys are of considerable interest due to their high thermal stability, a specification required for the next generation embedded digital memories. This stability results from fact that these do not crystallize congruently but experience separation forming Ge and GST‐225 nanocrystals upon crystallization. However, details crystallization process remain unclear. Combining in situ X‐ray diffraction studies during isothermal annealing ex...
For the first time, both GAA and bulk devices were shown to be operational on same chip. Not all issues have been solved yet (gate materials, access resistance) but already first-try results are very encouraging: I/sub on/=170 /spl mu/A//spl mu/m@1.2 V gate oxide of 20 Aring/. Thanks intrinsic immunity SCE, its DIBL was as small 10 mV compared with 600 control devices. Calibrating a 2D simulator this electrical data, performance estimated at least 1500 mu/m@ 1 comfortable Aring/, once having...
The influence of N concentration on the crystallization kinetics, microstructural evolution, and composition Ge‐rich GeSbTe (GGST) alloys during thermal annealing, using X‐ray diffraction scanning transmission electron microscopy is reported. It shown that incorporation in GGST tends to slow down phase separation, crystallization, growth processes annealing. This can be attributed reduced diffusivity Ge, which interacts quickly bonds with N. Technological advantages doping are also...
Among the many possible phase‐change materials that can be used in digital memories, Ge‐rich GeSbTe (GGST) alloys are of special interest due to their much higher thermal stability, i.e., crystallization temperature, they offer. However, contrast congruent which may transit from amorphous crystalline state while keeping same homogeneous chemical composition, GGST is obtained through successive formation Ge and GST‐225 phases. For this reason, show distinct properties characteristics those...
The down scaling of complementary metal oxide semiconductor transistors requires materials such as porous low-k dielectrics for advanced interconnects to reduce resistance-capacitance delay. After the deposition matrix and a sacrificial organic phase (porogen), postcuring treatments may be used create porosity by evaporation porogen. In this paper, Auger electron spectroscopy is performed simultaneously modify material (e-beam cure) measure corresponding changes in structure chemical...
In this paper, the first SON (Silicon On Nothing) devices with metal gate are presented. Extremely thin fully depleted Si-films recognized to be integrable single-metal (mid-gap) due their intrinsically low threshold voltage. work we present mid-gap CoSi/sub 2/ by total silicidation on transistors Si-conduction channel thickness down 5 nm. Due its architecture and continuity between SD areas bulk, allow deep processing oxide, meaning that no more polysilicon is left. PMOS were performed 55...
Ge‐rich Ge–Sb–Te alloy is a good candidate for future automotive applications due to its high crystallization temperature, which allows data retention at elevated temperatures. Crystallization in this material governed by elemental segregation key thermal stability and device performance. In work, (Ge, Sb, Te) studied situ during annealing of thin films using X‐ray fluorescence microscopy ID16B beamline ESRF with beam size 50 nm. Spatially resolved maps Ge, Te, Sb yield are monitored...
Abstract Among phase change materials, Ge-rich GeSbTe alloys (GGST) are key for the next generation of embedded memories because their good thermal stability, allowing use automotive applications. Several studies have investigated GGST crystallization, which takes place in several stages, including separation amorphous material, crystallization cubic Ge and GST phases before a complete higher budget. So far, however, no information is available on possible changes density thickness such...
Doped GeSbTe (GST)-based phase change materials are of growing interest due to their ability enable high-temperature data retention for embedded memory applications. This functionality is achieved through Ge enrichment and addition dopants such as N C in stoichiometries GST-225, which improve the crystallization temperature thermal stability. In this study, we examine effect these on conductivity using Raman thermometry. We report temperature-dependent amorphous crystalline phases Ge-rich...
In the frame of ALLIANCE program between Motorola, Philips Semiconductors and STMicroelectronics, electron beam direct write (EBDW) lithography based on shaped projection is employed to start quickly an aggressive 65 nm for printing all critical levels. This paper reviews economical opportunities offered by introduction (E-Beam) prototyping advanced research development applications. EBDW process integration capabilities are also demonstrated, confirming after electrical validation, real...
Among phase-change materials, Ge-rich GeSbTe “alloys” show superior properties that make them suitable for embedded memory applications. In article number 2000471, Alain Claverie and co-workers these result from their tendency to separate eventually crystallize into distinct Ge GST phases. Both mechanisms are limited by diffusion may be slowed down impurities such as nitrogen. Transport characteristics the possible percolation of carriers through two-phase materials.
The introduction of SiOCH low-k dielectrics in copper interconnects associated to the reduction critical dimensions advanced technology nodes is becoming a major reliability concern. interconnect realization requires consequent number process steps [1]. Since porous are used as Inter-Metal Dielectric (IMD) each step can be source degradation for dielectric. This paper describes influencing reliability. All processes affecting dielectric's interfaces also evidenced degrade robustness. Some...
This work analyses electromigration and dielectric lifetimes of 45 nm node CMOS interconnects. Reliability mechanisms failure modes are discussed considering, on one hand, the interconnect materials processes steps, other hand scaling issues. Robust reliability performance meeting required products target is actually obtained with process integration schemes used for thanks to fine optimizations Cu barriers, filling, ULK surface quality.