A5034042512- Phase-change materials and chalcogenides
- Cultural Heritage Materials Analysis
- Atomic and Subatomic Physics Research
- Radiation Detection and Scintillator Technologies
- Luminescence Properties of Advanced Materials
- Thermodynamic and Structural Properties of Metals and Alloys
- Glass properties and applications
- Chalcogenide Semiconductor Thin Films
- Mineralogy and Gemology Studies
- X-ray Diffraction in Crystallography
- Geotourism and Geoheritage Conservation
- Nonlinear Optical Materials Studies
- Liquid Crystal Research Advancements
- Advanced ceramic materials synthesis
- Geological Formations and Processes Exploration
- Thin-Film Transistor Technologies
- Architecture and Art History Studies
- European Socioeconomic and Political Studies
- Advanced X-ray Imaging Techniques
- Crystallography and molecular interactions
- Ecology, Conservation, and Geographical Studies
- Laser Material Processing Techniques
- Architecture, Modernity, and Design
- Entomological Studies and Ecology
- Silicone and Siloxane Chemistry
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2021-2025
Aix-Marseille Université
2021-2025
Université de Toulon
2023-2024
Centre National de la Recherche Scientifique
2021-2024
TU Wien
2013-2016
This study explores laser‐induced crystallization and amorphization processes in thin films of Ge‐rich GST (GGST), a tailored phase change material (PCM), monitored situ using synchrotron X‐ray diffraction. GGST's high temperature makes it promising for embedded memory applications. Experiments employed an 800 nm femtosecond laser source, varying fluence pulse parameters to induce transitions. Key findings include fluence‐dependent thresholds crystallizing Ge GST, along with precise control...
Ge‐rich Ge–Sb–Te alloy is a good candidate for future automotive applications due to its high crystallization temperature, which allows data retention at elevated temperatures. Crystallization in this material governed by elemental segregation key thermal stability and device performance. In work, (Ge, Sb, Te) studied situ during annealing of thin films using X‐ray fluorescence microscopy ID16B beamline ESRF with beam size 50 nm. Spatially resolved maps Ge, Te, Sb yield are monitored...
Crystals of KAgCO3 belong to an order-disorder (OD) family structures composed layers two kinds. There are polytypes with a maximum degree order [MDO1: Pccb; MDO2: Ibca, doubled a-axis compared MDO1], which both realised different extent in crystals under investigation [volume fraction MDO1:MDO2 crystal (I): 0.0216:0.9784 (3) and (II): 0.9657:0.0343 (3)]. Sharp diffraction spots the absence diffuse scattering indicate highly ordered macroscopic domains. The structure was refined concurrently...
The phase transition temperature and crystallization kinetics of phase-change materials (PCMs) are crucial characteristics for their performance, data retention, reliability in memory devices. Herein, the behavior a compositionally optimized, N-doped Ge-rich Ge–Sb–Te alloy (GGST) slow regime systematically investigated using synchrotron x-ray diffraction (XRD) situ during heat treatment. Uniform thin films (50, 25, 10, 5 nm) initially amorphous GGST investigated. specimens were heated up to...
To passivate dangling bonds, metal–oxide–semiconductor field‐effect transistor devices are usually treated with hydrogen. Herein, the effects of such a treatment on crystallization behavior N‐doped, Ge‐rich phase‐change materials for memory applications investigated using synchrotron X‐ray diffraction (XRD) in situ during heat treatment. Uniform thin films, and laterally confined, metallized ones (simulating different complexity) initially amorphous N‐doped GGST investigated. The specimens...
Research Article| July 01 1947 Timbered Architecture in Poland Hans Philipp Search for other works by this author on: This Site PubMed Google Scholar Journal of the Society Architectural Historians (1947) 6 (3-4): 14–17. https://doi.org/10.2307/987379 Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter LinkedIn Tools Get Permissions Cite Citation Philipp; Poland. 1 1947; doi: Download citation file: Ris (Zotero) Reference Manager EasyBib...
Silicon has been considered as one of the most promising anode materials for LIBs in order to replace conventional material (graphite). Investigations Li-Si binary system indicated at least theoretically, highest specific capacity (4200 mAh/g), during electrochemical lithium alloying (Li 4.4 Si) silicon with ions. Unfortunately, Si shows a very low mechanical elasticity battery cycling (lithiation/delithiation), which causes contact loss electrode and subsequently lead shorter cycle life...
In the present contribution we will show results of pairdistribution function (PDF) studies on amorphous materials.The pair distribution contains information occurrence all atom-to-atom distances in substance.The samples consist so called host materials for organic-light-emitting-diodes (OLEDs) and are applied as films.In this state their electronic structure seemingly gets altered a way required to induce light emittance blue region.The molecular molecules is known these posses large degree...