A5009863009- Phase-change materials and chalcogenides
- Chalcogenide Semiconductor Thin Films
- Nonlinear Optical Materials Research
- Advanced Semiconductor Detectors and Materials
Laboratoire des Technologies de la Microélectronique
2019-2021
CEA Grenoble
2020-2021
CEA LETI
2019-2021
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2019-2021
Centre National de la Recherche Scientifique
2021
STMicroelectronics (France)
2021
Université Grenoble Alpes
2021
STMicroelectronics (India)
2019-2021
Institut polytechnique de Grenoble
2020
Phase-change materials (PCMs) based on GeSbTe alloys are well known and widely used in optical storage devices. The recent progress scaling material engineering made PCMs also promising candidates for high-speed non-volatile memory applications [1] . Indeed, Phase-Change Memory (or PCM) devices feature high writing reading speed compatibility with working temperatures. Ge-rich is a embedded requiring data stability at temperature, thanks to its higher crystallization temperature wrt standard...