AIE-N*-LCs prepared by supramolecular self-assembly between achiral AIE-active dyes and N*-LCs can exhibit highly strong CPL signals with<italic>g</italic>_emvalues in the range from 0.97 to 1.42. Most importantly, their emission wavelength be tuned changing dye.

Two pairs of thermally activated delayed fluorescence (TADF)-active chiral luminogens (R/S-1 and R/S-2) can be achieved by introducing D-A-type groups to BINOL skeletons. The resulting exhibit aggregation-induced emission properties in THF-water mixtures TADF a doped-film state. absolute photoluminescence quantum yield (ΦPL) lifetimes (τdelayed) were measured 18.5% 1.03 μs for R-1 15.7% 0.97 R-2. However, only R/S-1 with the fixed conjugation structure emit circularly polarized luminescence...

The presence of renal noninflammatory necrotizing vasculopathy (NNV) is often associated with a severe form lupus nephritis (LN), which unresponsive to standard therapy. We conducted 6-month randomized, prospective, open-label trial comparing mycophenolate mofetil (MMF) (1.5—2.0 g/day) monthly i.v. cyclophosphamide (CTX) (0.75—1.0 g/m2) as induction therapy for class IV LN NNV. primary and second end points were complete remission (CR) partial (PR), respectively. Of 20 patients recruited,...

Neural network-based capacitance models are accurate, but some of them not charge-conservative. In this work, a novel consistent gate charge model for GaN high electron mobility transistors is presented based on neural networks. The equivalent circuit parameters extracted using the multiobjective gray wolf optimizer-based hybrid method, which improves accuracy parameter extraction. To obtain more reliable data sets accurate modeling, outliers in intrinsic capacitances automatically detected...

In the past few decades, circuits based on gallium nitride high electron mobility transistor (GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and high-frequency applications, such as new generation mobile communications, object detection, consumer electronics, etc. As critical intermediary between GaN HEMT devices circuit-level large-signal models play pivotal role design, application development circuits. This review provides an in-depth examination...

Abstract With the rapid development on 3D printing technology, more and works have been devoted to display. display will really come true by using circularly polarized luminescence (CPL)‐active materials with both high quantum yield dissymmetry factor ( g em ) in organic light‐emitting diode or liquid crystals (LCs). But so far most of these CPL cannot meet real application requirement because low values range 10 −5 –10 −2 . In this paper, ternary chiral emissive LCs (P‐N*‐LCs) is designed...

Modeling the temperature-dependent nonlinearity of intrinsic capacitances in AlGaN/GaN high electron mobility transistors (HEMTs) improves model accuracy. In this letter, extraction results indicate that current modeling methods cannot accurately reflect variations with temperature. This letter analyzes causes unmodeled phenomena and characterizes them based on device physics. Verifications show improved capacitance effectively enhances accuracy HEMT at non-nominal temperatures.

Neural networks are widely used to build large-signal models; an appropriate network architecture is important for high model accuracy and good generalization ability. In this article, evolutionary multilayer perceptron (EMLP)-based modeling approach proposed construct accurate with a proper GaN electron mobility transistors (HEMTs). The multiobjective gray wolf optimizer (MOGWO) optimize architectures, including the number of hidden layers neurons. two objective functions consist training...

GaN-on-Si high electron mobility transistors (HEMTs) were fabricated using Si CMOS-compatible metallization scheme for RF power amplifiers (PAs)in 5G low-power mobile system-on-chips (SoCs). Ta/Al metals adopted the ohmic contact formation. The device with 80-nm rectangular gate exhibited a drain current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dmax</sub> ) of 1.95 A/mm, peak transconductance (g...

A multi-band and polarization-insensitive metamaterial is proposed to harvest electromagnetic energy efficiently in three frequency bands. Based on a square resonant ring cross structure, designed achieve high harvesting efficiency of 81.2%, 93.3% 93.5% at 2.45 GHz, 4.0 GHz 5.8 respectively. The overall structure consists an <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$8\times 8$...

In this paper, the design and performance of a three-stage Ka-Band balanced high power amplifier (HPA) MMIC are presented. The proposed HPA utilizes 150-nm GaN-SiC HEMT process self-developed empirical model. By incorporating wideband matching networks Lange couplers, large saturated output power, gain, good conditions realized simultaneously. Simulated in continuous-wave (CW) operation, enjoys 20 dB gain covering 3-dB bandwidth 32~36 GHz with better than -8 impedance matching. For...

Light emission from metal–insulator–semiconductor junctions (MISJs) has been explored for decades as a possible on-chip light source; however it is not clear whether the mechanism of plasmonic in nature or dominated by electroluminescence. Previous studies only investigated silicon with low doping levels, but here we show that highly doped allows us to excite surface plasmon polaritons (SPPs) MISJs via inelastic tunneling. This paper describes charge transport and silicon-based Au-SiO2-nSi...

Abstract AlN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) on silicon substrate using in situ SiN as gate dielectric were fabricated and their RF power performance at mobile system-on-chip (SoC) compatible voltages was measured. At a SoC-compatible supply voltage of V d = 3.5 V/5 V, the 90 nm gate-length MISHEMTs showed maximum power-added efficiency 62%/58%, output density ( P outmax ) 0.44 W mm −1 /0.84 linear gain 20 dB/19 dB frequency 5 GHz. These...

Biomacromolecular condensates formed via phase separation establish compartments for the enrichment of specific compositions, which is also used as a biological tool to enhance molecule condensation, thereby increasing efficiency processes. Proteolysis-targeting chimeras (PROTACs) have been developed powerful tools targeted protein degradation in cells, offering promising approach therapies different diseases. Herein, we introduce an intrinsically disordered region PROTAC (denoted PSETAC),...

Through accelerated life test in hydrogen, we have found, for the first time, that addition to Pt metal, Ti metal a Ti/Pt/Au-gate PHEMT can also induce significant hydrogen effect by reacting with small amount of gas ambient. The sensitivity device caused gate is significantly less than due Pt. Since not catalyst, resulting indicates catalytic reaction between and required detrimental effect. data show degradation evident devices Ti-H/sub 2/ interaction similar from Pt-H/sub interaction. It...

Degradation of PHEMTs by hydrogen was verified DC life tests in the hermetic packages and forming gases containing different concentrations. We have found that a partial pressure order 2 torr will cause Ids change 20% about 800 hours at 125/spl deg/C 300 150/spl deg/C. The signature degradation is sudden significant drain current followed some recovery. It appeared both temperature H/sub 2/ dependent. Failure analysis indicates localized under gate major failure mechanism due to effective...

This paper investigates millimeter-wave rectifiers based on off-the-shelf Schottky diodes. A batch of MACOM MA4E1317 diodes were first measured. The dc IV ranges from -10 to 1 V, while the biased S-parameters measured up 50 GHz. For time, was modeled GHz, which gives more accurate modeling for extrinsic parameters a diode. Preliminary intrinsic and diode reported here. Based parameters, performance using analyzed by contour map method. It is found that greatly influence rectifier...

The adsorption/desorption behavior of mobile solute molecules at a solution−crystal interface has been explored using crystals model protein hen egg-white lysozyme (HEWL) and fluorescent-labeled HEWL (F-HEWL) molecules. We have tracked the transient processes occurring during identical F-HEWL on tetragonal crystal surface by single-molecule visualization total internal reflection fluorescent microscope pulsed discontinuous laser illumination. found an induction period (∼70 min) after which...

This article analyzes the bias dependence of gate-drain capacitance (Cgd) and gate-source (Cgs) in AlGaN/GaN high electron mobility transistors under a drain-to-source voltage (Vds) from perspective channel shape variation, further simplifies Cgd Cgs to be gate-to-source (Vgs) dependent only at Vds. method can significantly reduce number parameters fitted therefore lower difficulty model development. The Angelov models are chosen for verifying effectiveness simplification. Good agreement...

Empirical models have been widely and successfully used in device modeling the past few decades. However, they are becoming increasingly intricate to accurately capture complex thermal effects semiconductor devices. Therefore, aim of this work is utilize a general dimension-reduction method quickly construct large-signal devices with consideration effects. In general, junction voltage dimension represented by empirical functions, whereas temperature described first-order Taylor series...

The flicker noise modeling is of great significance in many applications high electron mobility transistors (HEMTs) low circuits. In this letter, a novel charge-based model for HEMTs proposed, which introduces the trap-charge fluctuation-based method to MIT virtual source (MVS) HEMT model. This highly compatible with MVS It can predict performance physically rigorous and accurate way. verified by excellent agreement between simulations measurement results.

High-temperature DC accelerated life tests on AlGaAs/InGaAs/GaAs pseudomorphic low-noise HEMTs were performed at three temperatures. It was found that the HEMT is as reliable GaAs MESFET and conventional HEMT. Based a failure criterion of -10% gm, activation energy 1.74 eV projected 150 degrees C about 4*10/sup 6/ hours. The mechanism to be dominated by source resistance increase.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

The results of an extensive life test program state-of-the-art InP HEMTs with 0.1- mu m gate lengths are presented. High-temperature DC tests revealed at least two degradational and one catastrophic failure mode. A decrease in g/sub m/ was observed which is a function temperature, greater for devices higher I/sub dss/. dss/, activation energy 1.25 eV. failures were due to migration ohmic metal from the contact gate. median 30 years 100 degrees C predicted data. 10000-h, 50 also run, little...

As an important component in the transmission system, gear endures complex stress during meshing process. The tiny defects of are likely to occur after some amount load cycles. This will lead a huge economic loss if not detected time. Metal magnetic memory (MMM) technique can effectively find early ferromagnetic material and it has attracted great attentions. However, mechanism metal on materials under loading geomagnetic field been thoroughly addressed, studies rarely reported. paper adopts...