A5101852378- X-ray Diffraction in Crystallography
- Crystallization and Solubility Studies
- Synthesis and Properties of Aromatic Compounds
- Luminescence and Fluorescent Materials
- Liquid Crystal Research Advancements
- GaN-based semiconductor devices and materials
- 2D Materials and Applications
- Ga2O3 and related materials
- Semiconductor Quantum Structures and Devices
- Molecular spectroscopy and chirality
- Quantum Dots Synthesis And Properties
- Metal-Organic Frameworks: Synthesis and Applications
- Magnetism in coordination complexes
- Water Quality Monitoring and Analysis
- Flood Risk Assessment and Management
- Silicone and Siloxane Chemistry
- Molecular Sensors and Ion Detection
- Photochemistry and Electron Transfer Studies
- International Maritime Law Issues
- High voltage insulation and dielectric phenomena
- Water resources management and optimization
- Lanthanide and Transition Metal Complexes
- Perovskite Materials and Applications
- Maritime Security and History
- Advanced Optical Imaging Technologies
Fujian Normal University
2009-2023
North China Electric Power University
2023
Nanjing University
2017-2020
State Key Laboratory on Integrated Optoelectronics
2013-2015
Chinese Academy of Sciences
2013-2015
Institute of Semiconductors
2013-2015
Liaoning Technical University
2002-2003
AIE-N*-LCs prepared by supramolecular self-assembly between achiral AIE-active dyes and N*-LCs can exhibit highly strong CPL signals with<italic>g</italic><sub>em</sub>values in the range from 0.97 to 1.42. Most importantly, their emission wavelength be tuned changing dye.
Chiral emissive liquid crystals (N*-LCs) have been proved to greatly amplify the circularly polarized luminescence (CPL) signals due highly regular spiral arrangement of dyes in a well-organized system. Normally, CPL materials with high dissymmetry factor (glum) and quantum yield (QY) can meet real application requirement. Here, four chiral aggregate-induced emission (AIE) active donors (Guests A1–A4: R-C2, R-C4, R-C6, R-C8, dopant, energy donor) achiral AIE-active acceptors (Guest B: PBCy,...
Chiral supramolecular assemblies (BNS–BPP) can exhibit circularly polarized luminescence (CPL) <italic>via</italic> electrostatic and π–π stacking interactions.
Recyclable CPL response in N*-LCs could be observed by using the applied DC electric field with EPT effect through texture change. This kind of “on–off–on” system based on can adjust <italic>g</italic><sub>em</sub> value and direction N*-LCs.
Circularly polarized organic light-emitting diodes were fabricated by using salen-Zn(<sc>ii</sc>) complex enantiomers (<italic>R</italic>-/<italic>S</italic>-ZnL) as the emitting layer, obtaining 1000 cd m<sup>−2</sup>, 0.181 A<sup>−1</sup> and 0.074 lm W<sup>−1</sup> for maximum brightness, current efficiency power efficiency. With an electroluminescence dissymmetry factor of up to +0.05/−0.05.
Chiral coordination polymers (<italic>R</italic>/<italic>S</italic>-P1) can exhibit stronger circularly polarized luminescence (CPL) compared with complex monomers.
The effects of Mg-induced net acceptor doping concentration and carrier lifetime on the performance a p—i—n InGaN solar cell are investigated. It is found that electric field induced by spontaneous piezoelectric polarization in i-region could be totally shielded when sufficiently high. polarization-induced potential barriers reduced short circuit current density remarkably increased from 0.21 mA/cm2 to 0.95 elevating Mg concentration. determined defect i-InGaN also plays an important role...
Optimizing the aerodynamic structure of composite insulators can guarantee safe operation power systems.In this study, we construct a simulation model for insulator contaminant deposition using COMSOL software, and rationality method is verified through wind tunnel experiments.Taking FXBW4-110/100 as an example, adopt progressive optimization plan to explore impacts shed spacing , inclination angles on its characteristics under DC AC voltages.Based numerical results, analyze antifouling...
Thin heavily Mg-doped InGaN and GaN compound contact layer is used to form Ni/Au Ohmic p-GaN. The growth conditions of the its effect on performance p-GaN are investigated. It confirmed that specific resistivity can be lowered nearly two orders by optimizing layer. When flow rate ratio between Mg Ga gas sources p++-InGaN 10.6% thickness 3 nm, lowest 3.98 × 10−5 Ωcm2 achieved. In addition, experimental results indicate further 1.07 10−7 alloying annealing temperature 520 °C.
Two InGaN/GaN multiple quantum well solar cells with different p-GaN layers are grown, and the effect of p-type GaN resistivity on spectral response is investigated. It found that external efficiency (EQE) increases obviously in low-energy range (λ > 360 nm), when layer decreases. According to calculation based C-V measurement, we believe width depletion region increasing MQW decreasing reduction responsible for variation EQE. The layer, thus, should be reduced further fabricating high...
mobility have attracted increasing research interest. In this work, we demonstrate theoretically the strong geometry confinement in InSe quantum dots (QD) and manipulate their electronic optical properties using QD shape external field. The energy levels, density of states, probability states magneto-optical absorption spectra, are calculated by utilizing tight-binding (TB) method with coulomb interaction Hubbard model. contrast to other 2D materials, e.g., phosphorene, InSe-QDs exhibit...