A5101633543- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Semiconductor materials and devices
- ZnO doping and properties
- Silicon Carbide Semiconductor Technologies
- Semiconductor Quantum Structures and Devices
- Metal and Thin Film Mechanics
- Acoustic Wave Resonator Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Plasma Diagnostics and Applications
- Photocathodes and Microchannel Plates
- Gas Sensing Nanomaterials and Sensors
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Nanowire Synthesis and Applications
- Advanced Photocatalysis Techniques
- Electrocatalysts for Energy Conversion
- Radio Frequency Integrated Circuit Design
- Organic Light-Emitting Diodes Research
- Electronic and Structural Properties of Oxides
- Optical Coatings and Gratings
- Terahertz technology and applications
- Plasmonic and Surface Plasmon Research
- Superconducting and THz Device Technology
- Advanced Fiber Laser Technologies
Suzhou Institute of Nano-tech and Nano-bionics
2016-2025
Chinese Academy of Sciences
2014-2025
University of Science and Technology of China
2022-2025
Tianjin University
2022
Suzhou Research Institute
2020
University of Hong Kong
2005-2015
Changchun University of Science and Technology
2008
Hong Kong University of Science and Technology
2005-2007
In this letter, enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated based on lateral scaling of the 2-D gas channel using nanochannel array (NCA) structure. The NCA structure consists multiple parallel channels with nanoscale width defined by electron-beam lithography and dry etching. Because improved gate control from sidewalls partially relaxed piezoelectric polarization, fabricated 2 <formula formulatype="inline"...
This paper investigates the performance of AlGaN/gallium nitride (GaN) MIS high electron mobility transistors (MIS-HEMTs). The gate dielectric layer and surface passivation are formed by low-pressure chemical vapor deposition (LPCVD) Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> . LPCVD-Si MIS-HEMTs exhibit a breakdown voltage (BV) 1162 V at I...
By employing an interface protection technique to overcome the degradation of etched GaN surface in high-temperature process, highly reliable LPCVD-SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> gate dielectric was successfully integrated with recessed-gate structure achieve high-performance enhancement-mode (V xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ~ +2.37 V @ I xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> = 100...
In this letter, a device structure of high-resistivity-cap-layer HEMT (HRCL-HEMT) is developed for normally-off p-GaN gate toward high breakdown voltage and low current collapse. It demonstrates that the capability collapse were effectively improved due to introduction thick HR-GaN cap layer. The fabricated HRCL-HEMT exhibits 1020 V at I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> = 10 μA/mm with substrate grounded. Meanwhile,...
In this letter, gate leakage mechanisms in different contact normally off p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) have been studied by the temperature-dependent current-voltage (IG-VG) measurement. It is found that two-dimensional variable range hopping responsible for current at reverse bias and low forward both high-leakage low-leakage Schottky devices. At bias, case of contact, dominant conduction mechanism to be thermionic field emission while it Poole–Frenkle (PFE)...
In this letter, silicon nitride (SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub> ) film deposited at 780 °C by low-pressure chemical vapor deposition (LPCVD) was employed as gate dielectric for GaN-based metal–insulator–semiconductor high-electron-mobility transistors. The LPCVD-SiN exhibit improved performance than the plasma enhanced deposition-SiN , including smaller forward and reverse leakage, higher breakdown voltage.
In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology, was adopted compensate holes in the p-GaN above two dimensional electron gas (2DEG) channel release electrons 2DEG and form high-resistivity area reduce leakage current increase gate control capability. The fabricated exhibits operation with threshold voltage 1.75 V, subthreshold swing 90 mV/dec, maximum transconductance 73.1...
The advanced OER activity is attributed to the hollow architecture, in which possessed numerous interfaces allow electron transfers between CoSe and FeSe<sub>2</sub><italic>via</italic> O<sup>2−</sup> bridges downshift d-band center, endowing fast catalytic kinetics.
This letter presents a fabrication technology of enhancement-mode (E-mode) AlGaN/GaN metal-insulator- semiconductor high-electron mobility transistors (MIS-HEMTs) using 10 keV fluorine ion implantation. An 8 nm low-pressure chemical vapor deposition silicon nitride layer was deposited on the AlGaN as gate dielectric and energy-absorbing that slows down high energy (10 keV) ions to reduce implantation damage. The E-mode MIS-HEMTs exhibit threshold voltage +3.3 V with maximum drain current...
Abstract This work proposes a novel gate stack with hydrogen (H) plasma treatment to improve the stability of p-channel field effect transistors (p-FETs). The threshold voltage (VTH) this device is −4.818 V, achieving normally-off operation, exhibiting an Ion/Ioff ratio 106 and low off-state leakage current -10−7 mA/mm at VGS=2V. H plasma-treated significantly stabilizes VTH GaN p-FETs, minimal variations 0.136 V 0.15 under negative (-5 V) positive (5 voltages, respectively. technology...
α-Gallium oxide (Ga2O3) has great potential in the applications of high-power, high-frequency, and energy-saving electronic devices. In this study, we successfully grew pure-phase α-Ga2O3 films on m-plane sapphire substrates by using metal organic chemical vapor deposition (MOCVD) systematically investigated impact various growth parameters resulting film characteristics. The crystallization quality improved adjusting VI/III ratio, ultimately yielding a symmetric rocking curve full width at...
In this letter, we demonstrate an integrated process that illustrates the compatibility of AlN/SiNx passivation with high-performance (i.e. low leakage and high breakdown) low-pressure chemical vapor deposition (LPCVD) SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> gate dielectric for GaN-based MIS-HEMT. It is shown structure maintains its superior capability suppressing current collapse after enduring temperature 780 °C during...
In this work, a dual-band junction field effect phototransistor (JFEPT) was fabricated by integrating p-type black phosphorus (BP) with Si-doped <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> . The operation principle of the JFEPT systematically investigated...
In power conversion systems, the devices often need to block high voltage levels during OFF-state. The impact of such stress can cause instability for device. This article presents investigation pulsed <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> – xmlns:xlink="http://www.w3.org/1999/xlink">V</i> (PIV) OFF-state drain test etch-free hydrogen plasma-treated p-GaN gate HEMT (H-treated devices). To quantitatively demonstrate effect...
In this paper, we systematically investigate the effect of hydrogen plasma treatment radio frequency (RF) power, time, and rapid thermal annealing (RTA) on performance high-resistivity-cap-layer high-electron-mobility-transistor (HRCL-HEMT). It is found that high RF power contributes to obtain drain current, but induces more damage. An appropriate RTA process not only can repair damage also improves static characteristics HRCL-HEMT. Subsequently, a large time window 4 min demonstrated with...
Electrical breakdown characteristics of AlxGa1−xN buffer layers grown on Si(111) are investigated by varying the carbon concentration ([C]: from ∼1016 to 1019 cm−3), Al-composition (x = 0 and 7%), thickness (from 1.6 3.1 μm). A quantitative relationship between growth conditions ([C]) is established, which can guide grow Ga(Al)N layer with a given [C]. It found that incorporation sensitive temperature (T) (exponential [C] 1/T) improvement voltage increasing observed be limited when exceeding...
In this article, the normally- OFF etching-free p-GaN stripe array gate AlGaN/GaN high-electron-mobility-transistors (PSAG-HEMTs) are designed and experimentally demonstrated through hydrogen plasma treatment. The unique threshold voltage (<inline-formula> <tex-math notation="LaTeX">${V}_{TH}$ </tex-math></inline-formula>) modulation technique based on PSAG structure is proposed simulated. Using method, <inline-formula> </tex-math></inline-formula> can be continuously shifted from...
This letter demonstrates high-performance lateral p-GaN/AlGaN/GaN hybrid anode diodes (HPT-HADs) using a novel hydrogen plasma treatment. Without field plates (FPs) or passivation, the HPT-HAD with anode-cathode distance (<inline-formula> <tex-math notation="LaTeX">${L}_{\text {AC}}$ </tex-math></inline-formula>) of 20 <inline-formula> notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> showed reverse breakdown voltage (<i>BV</i>) 2.01 kV differential specific ON-resistance...
We propose a method of oxygen plasma treatment to realize normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors. The fabricated device features an oxide surface passivation layer and high-resistivity GaN cap at the access region, both transformed from p-GaN by technique. With optimized conditions, low sheet resistance 682 Ω/□ has been successfully obtained shows high performance with positive threshold voltage +1.02 V, maximum drain current 301 mA mm−1, on/off ratio ∼108, breakdown...
Abstract We characterized an ionic liquid (1-butyl-3-methylimidazolium nitrate, C 8 H 15 N 3 O ) as a photo-electrochemical etchant for fabricating normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). Using the liquid, we achieved etching rate of ∼2.9 nm/min, which is sufficiently low to facilitate good control. The MIS-HEMT was fabricated with time 6 min, 20 nm low-pressure chemical vapor deposition (LPCVD) silicon nitride (Si 4 gate...
Abstract The scalable and durable electrosynthesis of high‐valued organonitrogen compounds from carbon‐ nitrogen‐containing small molecules, especially operating at a high current density, is highly desirable. Here, one‐pot electrooxidation method to synthesize formamide (HCONH 2 ) methanol ammonia over commercial boron‐doped diamond (BDD) catalyst reported. selectivity Faradaic efficiency (FE achieve 73.2 % 41.2 the density 120 mA cm −2 with durability. C−N bond originates nucleophilic...
A novel double-gate AlGaN/GaN HEMT, in which an additional top-gate covers the adjacent regions of a normal gate, was proposed and fabricated for first time to compare dynamic characteristics HEMTs with source field plate (SFP) gate (GFP). During characterization, device configured two operation modes: One is SFP mode top biased at 0 V, other GFP applying pulse signal on same time. Compared HEMT without plates, both much improve performances. SFP, shows better performances ~ 34% reduction...
Abstract This letter showcases the successful fabrication of an enhancement-mode (E-mode) buried p-channel GaN field-effect-transistor on a standard p-GaN/AlGaN/GaN-on-Si power HEMT substrate. The transistor exhibits threshold voltage ( V TH ) −3.8 V, maximum ON-state current I ON 1.12 mA/mm, and impressive / OFF ratio 10 7 . To achieve these remarkable results, H plasma treatment was strategically applied to gated p-GaN region, where relatively thick layer (i.e., 70 nm) kept intact without...