A5052884704- Ga2O3 and related materials
- ZnO doping and properties
- Advanced Photocatalysis Techniques
- Electronic and Structural Properties of Oxides
- Solid State Laser Technologies
- Photorefractive and Nonlinear Optics
- Semiconductor materials and devices
- Luminescence Properties of Advanced Materials
- Advanced Fiber Laser Technologies
- Microwave Dielectric Ceramics Synthesis
- Perovskite Materials and Applications
- Acoustic Wave Resonator Technologies
- Optical and Acousto-Optic Technologies
- Solid-state spectroscopy and crystallography
- Ferroelectric and Piezoelectric Materials
- Magneto-Optical Properties and Applications
- Transition Metal Oxide Nanomaterials
- Gas Sensing Nanomaterials and Sensors
- Thin-Film Transistor Technologies
- GaN-based semiconductor devices and materials
- Advanced Fiber Optic Sensors
- Laser-Matter Interactions and Applications
- Nanomaterials for catalytic reactions
- Advanced Memory and Neural Computing
- Ammonia Synthesis and Nitrogen Reduction
Shandong University
2016-2025
State Key Laboratory of Crystal Materials
2016-2025
City University of Hong Kong, Shenzhen Research Institute
2020-2024
Ministry of Education of the People's Republic of China
2020
University of Chinese Academy of Sciences
2018
The Synergetic Innovation Center for Advanced Materials
2018
Institute of Microelectronics
2018
Chinese Academy of Sciences
2018
Sun Yat-sen University
2018
The Pt/β-Ga2O3 Schottky barrier diode and its temperature-dependent current-voltage characteristics were investigated for power device application. edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented β-Ga2O3 single crystal substrate that shows good quality characterized by X-ray diffraction high resolution transmission electron microscope. Ohmic electrodes fabricated depositing Ti Pt metals on two surfaces, respectively. Through (I-V) measurement under...
Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga2O3) has emerged as a highly viable semiconductor for new researches. This article mainly focuses on growth processes, characteristics, applications Ga2O3. Compared with single crystals epitaxial other wide-bandgap semiconductors, large-size high-quality β-Ga2O3 can be efficiently grown low cost, making them competitive. Thanks availability crystals, films, high-performance devices based Ga2O3 go...
A high-performancesolar-blind photodetector based on Cr-doped gallium oxide (Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) has been fabricated. 140-nm-thick Ga layer was mechanically exfoliated from bulk crystal. The a field-effect transistor structure, which showed very high photo-to-dark current ratio larger than 106 and excellent saturation. When the tested with 254-nm...
Two-dimensional (2D) metal oxides exhibit extraordinary mechanical and electronic properties, leading to new paradigms in the design of optical systems. However, as a representative, 2D Ga2O3-based memristor has rarely been touched, which is hindered by challenges associated with large-scale material synthesis. In this work, ultrathin Ga2O3 layer (∼3 nm thick) formation on liquid gallium (Ga) surface transferred lateral dimensions over several centimeters substrate via squeeze-printing...
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Abstract The persistent photocurrent (PPC) and high carrier concentration are challenging the ultraviolet photodetection behaviors of amorphous InGaO films. Herein, InGaO/PbI 2 heterojunction is constructed by an all‐solution synthesis process to set up a built‐in electric field at interface, which aimed inhibition PPC, suppression dark current, promotion photogenerated separation. With optimized In content 90%, as‐fabricated photodetector exhibits excellent self‐powered near‐ultraviolet...
A long list of main group and transition metals, even some lanthanides, have been examined based on first principles studies, to search for potential p-type dopants β-Ga<sub>2</sub>O<sub>3</sub>.
High-quality bulk β-Ga<sub>2</sub>O<sub>3</sub> single crystals have been grown by optimized edge-defined film-fed growth (EFG) method.
To suppress noise from full daylight background or environmental radiation, a spectrally selective solar-blind photodetector is widely required in many applications that need detection of light within specific spectral range. Here, we present highly narrow-band photodetectors by polarization engineering the anisotropic transitions β-Ga2O3 single crystals. The polarized transmittance characteristics reveal direct valance subbands to conduction band minimum are tuned between 4.53 and 4.76 eV...
We fabricated β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> photodetectors on bulk substrate and sapphire. Bulk Ga photodetector demonstrates the improved responsivity compared with device sapphire, due to higher crystal quality in material. Optical gain is achieved both devices. For first time, we report that epitaxially grown sapphire achieves a blueshift of bandgap comparison...
β-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of devices at various temperatures important for improving device performance and reliability. In this study, we fabricated a Pt/β-Ga2O3 Schottky barrier diode good characteristics, such as low ON-resistance, high forward current, large rectification ratio. Its temperature-dependent current–voltage capacitance–voltage were measured temperatures. The...
A Schottky barrier rectifier was fabricated with a (100)-oriented <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> substrate grown by the edge-defined film-fed method. The Sn-doped had an effective donor concentration of approximately notation="LaTeX">$2\times...
This letter reports a high-performance solar-blind phototransistor based on N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -annealed β-Ga O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> microflake for weak light detection. The exhibits an ultra-low dark current of 27 fA, high external quantum efficiency 8.36 x 107%, photo-to-dark-current ratio 1.08 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> , low power consumption...
Abstract Self‐powered solar‐blind photodiodes with convenient operation, easy fabrication, and weak‐light sensitivity, are highly desired in environmental monitoring deep space exploration. Ga 2 O 3 its bandgap directly corresponding to waveband is a promising candidate material for photodetection. However, ever‐reported self‐powered suffer unsatisfactory photoresponse performance, owing unideal interface electrode transmittance. Here, Ag nanowire (AgNW) networks excellent ultraviolet...
This work reports a β-Ga2O3 double-barrier Schottky barrier diode (DBSBD) with both low turn-on voltage and reverse leakage current by using Ni PtOx as the anode electrode. The height of PtOx-based can be effectively modulated from 1.26 to 1.62 eV adjusting oxygen pressure during sputtering processes. Combining maximum function electrode optimization ratio PtOx, DBSBD an diameter DNi /DPtOx = 75/150μm not only exhibits high forward 470.9 A/cm2 (at 3.5 V), on-resistance 4.1 mQ ·cm2 1.13 V,...
In this Letter, we report on establishing high performance hysteresis-free and μs-switching depletion/enhancement-mode (D/E-mode) β-Ga2O3 heterojunction (HJ) field effect transistors (FETs) with the state-of-art power figure-of-merit (P-FOM). By optimizing p-NiOx/n-Ga2O3 interface n-Ga2O3 recess technology, a positive threshold voltage (VT) as well low subthreshold slope can be substantially achieved. The trade-off between on-resistance (Ron,sp) breakdown (BV) is improved by incorporation of...
The edge-terminated Au/Ni/β-Ga2O3 Schottky barrier diodes were fabricated by using argon implantation to form the high-resistivity layers at periphery of anode contacts. With energy 50 keV and dose 5 × 1014 cm−2 1 1016 cm−2, reverse breakdown voltage increases from 209 252 451 V (the maximum up 550 V) Baliga figure-of-merit (VBR2/Ron) also 25.7 30.2 61.6 MW about 17.5% 140% enhancement, respectively. According 2D simulation, electric fields junction corner are smoothed out after position...
β-Ga2O3, a semiconductor material, has attracted considerable attention given its potential applications in high-power devices, such as high-performance field-effect transistors. For decades, β-Ga2O3 been processed through chemical mechanical polishing (CMP). Nevertheless, the understanding of effect OH- on CMP with an alkaline slurry remains limited. In this study, substrates were successively subjected to (MP), and etching. Then, investigate changes that occurred surfaces samples, samples...
In this letter, MOS capacitors with bilayer dielectrics consisted of large bandgap Al2O3 and high-k HfO2 in different stacking order on n-type doped (100) β-Ga2O3 are investigated through C − V J measurement. The measurement results reveal that incoming makes both structures attain an increasing dielectric constant, which means a better gate control ability transistors comparing single Al2O3. Additionally, the interface state density extracted by high-low frequency capacitance method...
Innovative technology assessment and crystalline quality optimization of columnar β-Ga<sub>2</sub>O<sub>3</sub> crystal growth were performed <italic>via</italic> an EFG method.
Abstract Fabricating a heterojunction photodetector is efficient to take advantage of the built‐in electric field formed by and thus improve performance photodetector. Herein, CuZnS/Ga 2 O 3 type‐II designed constructed chemical bath deposition for first time. The exhibits super high rectifying characteristics (5.7 × 10 4 at ± 1 V), responsivity (48.01 mA W −1 0 detectivity (1.83 12 Jones which are higher than most reported inorganic devices as far authors know. Benefiting from...