A5055388927- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
- Advanced Memory and Neural Computing
- Nanowire Synthesis and Applications
- Ga2O3 and related materials
- ZnO doping and properties
- MXene and MAX Phase Materials
- Plasmonic and Surface Plasmon Research
- Ferroelectric and Piezoelectric Materials
- Semiconductor materials and interfaces
- Electronic and Structural Properties of Oxides
- Neural Networks and Reservoir Computing
- 2D Materials and Applications
- Perovskite Materials and Applications
- Acoustic Wave Resonator Technologies
- Advanced Photocatalysis Techniques
- Advanced Fiber Optic Sensors
- Integrated Circuits and Semiconductor Failure Analysis
- Photonic Crystals and Applications
- GaN-based semiconductor devices and materials
- Metamaterials and Metasurfaces Applications
- Mechanical and Optical Resonators
- Advanced Photonic Communication Systems
Xidian University
2016-2025
Xuzhou University of Technology
2022-2025
Institute of Microelectronics
2019-2024
Zhejiang Lab
2021-2023
Songshan Lake Materials Laboratory
2023
Zhejiang University
2023
Southeast University
2023
Peking University
2023
Chongqing University
2013-2022
Intel (United States)
2022
This work investigates the electronic band structures of bulk Ge1-xSnx alloys using empirical pseudopotential method (EPM) for Sn composition x varying from 0 to 0.2. The adjustable form factors EPM were tuned in order reproduce features that agree well with reported experimental data. Based on adjusted factors, calculated along high symmetry lines Brillouin zone. effective masses at edges extracted by a parabolic line fit. bowing parameters hole and electron then derived fitting mass...
In-memory computing featuring a radical departure from the von Neumann architecture is promising to substantially reduce energy and time consumption for data-intensive computation. With increasing challenges facing silicon complementary metal-oxide-semiconductor (CMOS) technology, developing in-memory hardware would require different platform deliver significantly enhanced functionalities at material device level. Here, we explore dual-gate two-dimensional ferroelectric field-effect...
We report the first ferroelectric (FE) HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> (HZO) Ge and GeSn pMOSFETs with sub-60 mV/decade subthreshold swing (SS) (40~43 mV/decade), negligible hysteresis, enhanced Ids. With a RTA at 450 <sup xmlns:xlink="http://www.w3.org/1999/xlink">o</sup> C, FE devices reduced hysteresis of 40~60 mV demonstrate significantly improved SS I xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub>...
We report the investigation of negative differential resistance (NDR) in capacitance (NC) germanium (Ge) pFETs. The NDR NC transistors is attributed to coupling drain voltage internal gate V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">int</sub> via gate-to-drain capacitance. It demonstrated that strongly depends on matching between induced by ferroelectric C xmlns:xlink="http://www.w3.org/1999/xlink">FE</sub> and positive associated with...
The realization of high-<em>Q</em> resonances in a silicon metasurface with various broken-symmetry blocks is reported. Theoretical analysis reveals that the sharp metasurfaces originate from symmetry-protected bound continuum (BIC) and magnetic dipole dominates these peculiar states. A smaller size defect block gives rise to resonance larger <em>Q</em> factor. Importantly, this relationship can be tuned by changing structural parameter, resulting modulation topological configuration BICs....
Single crystallinity (AlGa)2O3 solar-blind photodetectors are epitaxially grown on sapphire. Oxygen pressure during the growth has a great impact Al composition in (AlGa)2O3, which is investigated utilizing X-ray photoelectron spectroscopy and diffraction measurements. Measured transmittance spectra responsivity demonstrate that achieve wider bandgap compared to Ga2O3 device. An (Al0.12Ga0.88)2O3 device obtains 10 times higher photocurrent Iphoto than photodetector. However, as increases,...
Abstract Neuromorphic computing on the hardware level is promising for performing ever‐increasing data‐centric tasks owing to its superiority conventional von Neumann architecture in terms of energy efficiency and learning ability. One key aspect implementation development artificial synapses that can effectively emulate multiple functionalities exhibited by their biological counterparts. Here, building an inorganic ferroelectric gate stack integrated with a 2D layered semiconductor (WS 2 ),...
We propose computing primitive for an all-optical spiking neural network (SNN) based on vertical-cavity surface-emitting lasers (VCSELs) supervised learning by using biologically plausible mechanisms. The spike-timing-dependent plasticity (STDP) model was established the dynamics of semiconductor optical amplifier (VCSOA) subject to dual-optical pulse injection. neuron-synapse self-consistent unified SNN developed, which enables reproducing essential neuron-like and STDP function. Optical...
Abstract The explosive growth of data and information has motivated various emerging non-von Neumann computational approaches in the More-than-Moore era. Photonics neuromorphic computing attracted lots attention due to fascinating advantages such as high speed, wide bandwidth, massive parallelism. Here, we offer a review on optical neural our research groups at device system levels. photonics neuron synapse plasticity are presented. In addition, introduce several architectures algorithms...
Abstract In‐sensor computing with visual information, which can integrate photo‐sensing, data storage, and computation functions within the same physical element, has promised a fundamentally different architecture for future machine vision technology extreme energy time efficiency. The elementary devices required to fulfil goal of such new sensory scheme would demand bold functional variation existing sensor processing hardware. Here, van der Waals (vdW) heterostructure‐based optoelectronic...
Abstract Optical materials with centrosymmetry, such as silicon and germanium, are unfortunately absent of second‐order nonlinear optical responses, hindering their developments in efficient devices. Here, a design an array slotted nanocubes is proposed to realize remarkable second harmonic generation (SHG) from the centrosymmetric silicon, which takes advantage enlarged surface nonlinearity, strengthened electric field over air‐slot, well resonance enhancement by bound states continuum....
HfO2–ZrO2 ferroelectric films have recently gained considerable attention from integrated circuit researchers due to their excellent properties over a wide doping range and low deposition temperature. In this work, different superlattice (SL) FE with varying periodicity of HfO2 (5 cycles)–ZrO2 cycles) (SL5), (10 (SL10), (15 (SL15) were studied systematically. The HfZrOx (HZO) alloy was used as comparison device. SL5 film demonstrated improved compared the HZO film, 2 times remnant...
Abstract Two-dimensional (2D) semiconductor-based vertical-transport field-effect transistors (VTFETs) – in which the current flows perpendicularly to substrate surface direction are drive surmount stringent downscaling constraints faced by conventional planar FETs. However, low-power device operation with a sub-60 mV/dec subthreshold swing (SS) at room temperature along an ultra-scaled channel length remains challenging for 2D VTFETs. Here, we report steep-slope VTFETs that combine...
We report the first study of effect strain on tunneling field-effect transistor (TFET) characteristics. Double-gate silicon TFETs were employed. It was found that tensile increases drain current, whereas compressive reduces current. This is attributed to strain-induced band splitting and carrier repopulation provides guidelines engineering TFETs. An elaborate dependence electrical characteristics TFET temperature also reported. observed on-state current exhibits a positive at low bias...
In this letter, we report the first study of dependence carrier mobility and drive current I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Dsat</sub> Ge xmlns:xlink="http://www.w3.org/1999/xlink">0.958</sub> Sn xmlns:xlink="http://www.w3.org/1999/xlink">0.042</sub> p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) on surface orientations. Compressively strained channels were grown (100) (111) substrates. Sub-400°C Si...
In this paper, β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ultraviolet photodetectors were grown on sapphire utilizing the laser molecular beam epitaxy tool. The impact of oxygen pressure P xmlns:xlink="http://www.w3.org/1999/xlink">O2</sub> in growth chamber crystal quality, surface morphology, chemical component Ga films, and electrical performance are characterized. As is...
Negative capacitance (NC) GeSn pFETs integrated with HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> (HZO) ferroelectric film is demonstrated sub-20 mV/decade subthreshold swing (SS) over two orders of magnitude IDS. The ratio remnant polarization to coercivity in HZO significantly improved the increasing annealing temperature from 400°C 500°C, which contributes effective reduction hysteresis NC transistors. Ferroelectric pFET...
We fabricated β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> photodetectors on bulk substrate and sapphire. Bulk Ga photodetector demonstrates the improved responsivity compared with device sapphire, due to higher crystal quality in material. Optical gain is achieved both devices. For first time, we report that epitaxially grown sapphire achieves a blueshift of bandgap comparison...
We for the first time demonstrate heterogeneous integration of 2-inch β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thin films onto 4H-SiC and Si (001) substrates by ion-cutting process, as well fabrication high-performance MOSFETs on wafers. single-crystalline film with a wafer-level thickness non-uniformity below ±1.8% is transferred SiC substrates. Three high-quality wafers,...
HfO<sub>2</sub>-ZrO<sub>2</sub> superlattice (SL) ferroelectric (FE) capacitor is demonstrated to have improved endurance performance and higher fatigue recovery capability compared the HfZrO<sub><i>x</i></sub> (HZO) device. During cycling of polarization (<inline-formula> <tex-math notation="LaTeX">${P}$ </tex-math></inline-formula>) <i>vs.</i> voltage notation="LaTeX">${V}$ loops, SL metal-FE-metal (MFM) exhibits <inline-formula> </tex-math></inline-formula> lower leakage current over HZO...
In this article, a phase-field polarization switching model for ferroelectric HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based thin films considering oxygen vacancies ( <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{o}$ </tex-math></inline-formula> ) has been developed based on the 2-D time-dependent Ginzburg–Landau (TDGL) equation coupling with Poisson's equation. The impacts of...
Abstract Organic hybrid halide perovskite, which has excellent characteristics of low cost, nontoxicity, and high recognition, attracted extensive attention in optical anticounterfeiting applications. In this paper, (TEA) 2 ZrCl 6 (TEA = tetraethylammonium) single crystals (SCs) are synthesized by an easy‐to‐operate hydrothermal method, exhibits excitation wavelength‐dependent emission at 254 365 nm, respectively. Moreover, the photoluminescence quantum yield SCs achieves 84.7%, with...
The first demonstration of GeSn pMOSFETs was reported. Key highlights this work also includes a 180 °C MBE growth, sub-370 Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> H xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> surface passivation and gate stack process for GeSn, an implantless metallic NiGeSn S/D formed at 350 °C. A hole mobility 430 cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs is obtained pMOSFETs,...