A5003619700- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- MXene and MAX Phase Materials
- Integrated Circuits and Semiconductor Failure Analysis
- Nanowire Synthesis and Applications
- Ferroelectric and Piezoelectric Materials
- Semiconductor materials and interfaces
- Photonic and Optical Devices
- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Silicon Carbide Semiconductor Technologies
- Electronic and Structural Properties of Oxides
- Photonic Crystals and Applications
- 3D IC and TSV technologies
- Neural Networks and Reservoir Computing
- Terahertz technology and applications
- Acoustic Wave Resonator Technologies
- Injection Molding Process and Properties
- Phase-change materials and chalcogenides
- Multiferroics and related materials
- Advanced ceramic materials synthesis
- Magnetic properties of thin films
- Advanced machining processes and optimization
Xidian University
2024-2025
Zhejiang Lab
2020-2024
Zhejiang University
2016-2020
Japan Science and Technology Agency
2015-2017
The University of Tokyo
2013-2017
Tokyo University of Information Sciences
2017
Zhejiang Normal University
2016
Centre for Research in Engineering Surface Technology
2015
Northeast Forestry University
2009
Peking University
2005
HfO<sub>2</sub>-ZrO<sub>2</sub> superlattice (SL) ferroelectric (FE) capacitor is demonstrated to have improved endurance performance and higher fatigue recovery capability compared the HfZrO<sub><i>x</i></sub> (HZO) device. During cycling of polarization (<inline-formula> <tex-math notation="LaTeX">${P}$ </tex-math></inline-formula>) <i>vs.</i> voltage notation="LaTeX">${V}$ loops, SL metal-FE-metal (MFM) exhibits <inline-formula> </tex-math></inline-formula> lower leakage current over HZO...
In this article, a phase-field polarization switching model for ferroelectric HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based thin films considering oxygen vacancies ( <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{o}$ </tex-math></inline-formula> ) has been developed based on the 2-D time-dependent Ginzburg–Landau (TDGL) equation coupling with Poisson's equation. The impacts of...
HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /AlO xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /GeO gate-stacks have been fabricated on Ge surfaces by in situ ozone postoxidation method. It is found that the ultrathin GeOx interfacial layer beneath high-k capping formed postoxidation, yielding sufficiently low density of interface traps. In addition, due to crystallization , permittivity increases after postoxidation. As a...
HfO2-ZrO2 superlattice (SL) ferroelectric (FE) ultrathin films exhibit significant improvement in endurance performance compared with solid-solution HfxZr1−xO2 (HZO). Despite the experimental evidence, underlying microscopic mechanisms of enhanced reliability SL remain elusive. This Letter explores mechanism by performing first-principle calculations on and HZO systems. The can be well explained higher oxygen vacancy (Vo) migration energy barriers along FE polarization direction, which slow...
Abstract This work reviews the state-of-the art multi-gate field-effect transistor (MuGFET) process technologies and compares device performance reliability characteristics of MuGFETs with planar Si CMOS devices. Owing to 3D wrapped gate structure, can suppress SCEs improve ON-current due volume inversion channel region. As technology pioneers sub-10 nm nodes, challenges in terms lithography capability, integration controversies, variability etc. were also discussed this work. Due severe...
In this article, an analog synapse based on a nonvolatile field-effect transistor with amorphous ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> dielectrics has been fabricated and demonstrated. The conductance modulation properties of the devices have systematically evaluated. Due to polarization switching dynamics ferroelectric-like dielectric, which is attributable voltage-driven oxygen vacancies negative charges dipoles, proposed...
We demonstrate electrical characterizations within sub-1 ns to investigate the self-heating effect (SHE) in 14 nm FinFETs, for first time. Thanks extremely fast I-V measurement speed (~500 ps), heat generation and dissipation process transistor channel are precisely captured. Furthermore, unique correlation between temperature drain current at different gate biases is obtained. With this correlation, transient static temperatures could be extracted devices with any working conditions...
GeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /Ge interfaces are fabricated by plasma post oxidation of Al xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (100) structures at 300 °C and room temperature (RT). It is found that reduction results in a significant decrease the interface roughness slight increase trap density. The Ge p- n-channel MOSFETs with oxidized RT provide...
In this brief, we report that HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> –ZrO superlattice (SL) ferroelectric field-effect transistors (FeFETs) demonstrate improved endurance, fatigue recovery, and retention performance compared to the HfZrO xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub> (HZO) control devices. During program/erase (P/E) cycling data retention, density of interface traps is observed increase less in SL...
We have proposed and experimentally demonstrated a novel multi-bit content addressable memory (CAM) cell based on two series connected ferroelectric FETs (FeFETs). Thanks to the multilevel (MLC) operations of FeFETs complementary inputs search lines (SLs), CAM functions with 2-bits/cell are realized. Bit density can be further boosted by implementing more stable states FeFETs. In addition, cells integrated in form 3D vertical FeFET NAND, which enables ultra-high energy efficiency at low...
Mechanisms of the mobility degradation in high normal field (or Ns) Ge pand n-metal-oxide-semiconductor field-effect transistors (MOSFETs) with plasma postoxidation GeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /Ge MOS interfaces: 1) carrier trapping due to surface states; 2) roughness scattering; and 3) electron transfer into Δ valleys effective mass, have been systematically investigated. It is confirmed that existence states...
The impact of surface orientations on electrical characteristics Ge pand n-channel MOSFETs with ultrathin equivalent oxide thickness Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /GeOx/Ge gate-stacks is systematically investigated. It found that (100), (110), and (111) GeOx/p-Ge metal-oxide-semiconductor (MOS) interfaces have a similar interface trap density (D...
We have experimentally investigated disturb-free operations of multilevel cell (MLC) ferroelectric field-effect transistors (FeFETs) in a NAND array. The fabricated FeFET cells are systematically characterized, and optimized schemes to write into multiple states with high stability investigated. Write read achieve stable MLC arrays proposed. For the realization operations, both program disturbs characterized at array level. In addition, margins inhibition voltage ( <inline-formula...
We have experimentally demonstrated that the ferroelectricity can be controlled by reversibly injecting oxygen vacancies ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {o}}{)}$ </tex-math></inline-formula> from interfacial layer (IL) of TiOxNy to Hf notation="LaTeX">$_{{0}.{5}}$ Zr0.5O2(HZO) or extracting them HZO IL in titanium nitride (TiN) notation="LaTeX">$/$ TiN structure for first time....
Ultrahigh-density data storage is realized using a thermochemical hole-burning technique based on scanning tunneling microscopy (STM). The heating effect induced by the STM current gives rise to localized decomposition of an organic charge-transfer complex substrate and subsequent gasification its low- boiling-point products. A large array nanometer-sized holes recorded (see Figure). Supporting information for this article available WWW under...
In this paper, we have successfully demonstrated high quality Extremely-thin body (ETB) Ge-on-insulator (GOI) p-MOSFETs with thickness ranging from 25 nm to 2 nm. Furthermore, the hole mobility and GOI dependence over a wide range of down are systematically analyzed understood viewpoint scattering mechanisms, for first time.
The ultra-thin body and buried-oxide (UTBB) Germanium-on-Insulator (GeOI) substrates have been fabricated by direct wafer bonding polishing techniques. Ge BOX layer thicknesses are as thin 9 13 nm, respectively. UTBB GeOI exhibit superior crystal quality (similar to the bulk single crystalline Ge) sufficiently reduced surface roughness. As a result, Hall hole mobility of reaches 1330 cm2/V s with carrier concentration 2 × 1016 cm−3. inversion mode nMOSFETs also demonstrated suppressed...
The realization of Ge gate stacks with a small amount slow trap density as well thin equivalent oxide thickness and low interface state (Dit) is crucial issue for CMOS. In this study, we examine the properties traps, particularly location Al2O3/GeOx/n-Ge HfO2/Al2O3/GeOx/n-Ge MOS interfaces changing process structural parameters, formed by atomic layer deposition (ALD) Al2O3 HfO2/Al2O3 combined plasma post oxidation. It found that traps can locate in GeOx interfacial layer, not ALD layer....
The sensitivity enhancement of piezoelectric force sensors is investigated based on multiple effects in this paper. At first, theoretical analysis showed that had an influence the sensors. Secondly, a practicable method was adopted to perform experimental validation and quantify effects. In method, different capacitors whose capacitances became much larger than quartz sensor were parallel with sensor. With details obtained. Experimental results increased from 4.00 pC/N 4.07 when capacitance...