A5037501448- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- Photocathodes and Microchannel Plates
- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Advanced Photocatalysis Techniques
- Optical Wireless Communication Technologies
- Perovskite Materials and Applications
- Acoustic Wave Resonator Technologies
- Gas Sensing Nanomaterials and Sensors
- Advanced Memory and Neural Computing
- Organic Light-Emitting Diodes Research
- Semiconductor Lasers and Optical Devices
- Metal and Thin Film Mechanics
- 2D Materials and Applications
- Photonic and Optical Devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced biosensing and bioanalysis techniques
- Silicon Carbide Semiconductor Technologies
- Electronic and Structural Properties of Oxides
- Luminescence Properties of Advanced Materials
- Ferroelectric and Piezoelectric Materials
- Plasma Diagnostics and Applications
University of Science and Technology of China
2019-2025
Chinese Academy of Sciences
2022-2024
Hefei Institutes of Physical Science
2023-2024
Shanghai Research Center for Wireless Communications
2023
King Abdullah University of Science and Technology
2017-2020
Indian Institute of Technology Bombay
2018
Indian Institute of Technology Delhi
2018
Boston University
2011-2017
Georgia Institute of Technology
2017
In recent years, Ga2O3 solar-blind photodetectors (SBPDs) have received great attention for their potential applications in imaging, deep space exploration, confidential communication, etc. this work, we demonstrated an ultra-high-performance ε-Ga2O3 metal–semiconductor–metal (MSM) SBPD. The fabricated exhibited a record-high responsivity and fast decay time of 230 A/W 24 ms, respectively, compared with MSM-structured reported to date. Additionally, the MSM SBPD presents ultrahigh...
Precise control of the heteroepitaxy on a low-cost foreign substrate is often key to drive success fabricating semiconductor devices in scale when large native not available. Here, we successfully synthesized three different phases Ga2O3 (α, β, and ε) films c-plane sapphire by only tuning flow rate HCl along with other precursors an MOCVD reactor. A 3-fold increase growth pure β-Ga2O3 was achieved introducing 5 sccm flow. With continuously increased flow, mixture β- ε-Ga2O3 observed, until...
Energy-saving photodetectors are the key components in future photonic systems. Particularly, self-powered photoelectrochemical-type (PEC–PDs), which depart completely from classical solid-state junction device, have lately intrigued intensive interest to meet next-generation power-independent and environment-sensitive photodetection. Herein, we construct, for first time, solar-blind PEC PDs based on self-assembled AlGaN nanostructures silicon. Importantly, with proper surface platinum (Pt)...
Abstract High‐quality epitaxy consisting of Al 1− x Ga N/Al y N multiple quantum wells (MQWs) with sharp interfaces and emitting at ≈280 nm is successfully grown on sapphire a misorientation angle as large 4°. Wavy MQWs are observed due to step bunching formed the edges. A thicker QW width accompanied by greater accumulation gallium near macrostep edge than that flat‐terrace 4° misoriented sapphire, leading generation potential minima respect their neighboring QWs. Consequently,...
Abstract Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due to its critical applications, especially safety and space detection. A DUV photodetector based on wide-bandgap semiconductors provides a subversive scheme simplify currently mature system. As an ultra-wide-bandgap (4.4–5.3 eV) semiconductor directly corresponding waveband, Ga 2 O 3 important strategic position prospective layout of technology owing intrinsic characteristics high breakdown...
The investigation of electrical and optical properties micro-scale AlGaN deep ultraviolet (DUV) light-emitting diodes (LEDs) emitting at <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mo>∼<!-- ∼ --></mml:mo> </mml:mrow> <mml:mn>275</mml:mn> <mml:mspace width="thickmathspace" /> <mml:mi mathvariant="normal">n</mml:mi> mathvariant="normal">m</mml:mi> </mml:math> was carried out, with an emphasis on fabricated devices having a...
In this work, we demonstrate a high-performance ultraviolet phototransistor (UVPT) based on the AlGaN/GaN high-electron mobility transistor (HEMT) configuration. When device is biased at off state, peak photoresponsivity (R) of 3.6 × 107 A/W under 265 nm illumination and 1.0 106 365 can be obtained. Those two R values are one highest among reported UVPTs same detection wavelength off-state conditions. addition, investigate gate-bias (VGS) dependent photoresponse fabricated with assistance...
Gallium oxide (Ga2O3) is rapidly emerging as a material of choice for the development solar blind photodetectors and power electronic devices which are particularly suitable in harsh environment applications, owing to its wide bandgap extremely high Baliga figure merit (BFOM).The Ga2O3 based show robustness against chemical, thermal radiation environments.Unfortunately, current technology still not mature commercial usage., Thus, extensive research on growth various polymorph materials has...
III-V semiconductor nanowires are indispensable building blocks for nanoscale electronic and optoelectronic devices. However, solely relying on their intrinsic physical material properties sometimes limits device functionalities to meet the increasing demands in versatile complex world. By leveraging distinctive nature of one-dimensional geometry large surface-to-volume ratio nanowires, new can be attained through monolithic integration conventional with other easy-synthesized functional...
Abstract Hydrogen, produced through a zero‐pollution, sustainable, low‐cost, and high‐efficiency process, is regarded as the “ultimate energy” of 21st century. Solar water‐splitting techniques have immense potential to make idea reality. Two promising approaches, photovoltaic‐electrolysis (PV‐EC) photoelectrochemistry (PEC), demonstrated solar‐to‐hydrogen conversion efficiency over 10%, which minimum required for competitively priced, large‐scale systems. Extensive studies PV‐EC PEC devices...
The p-n junction with bipolar characteristics sets the fundamental unit to build electronics while its unique rectification behavior constrains degree of carrier tunability for expanded functionalities. Herein, a bipolar-junction photoelectrode employed gallium nitride (GaN) homojunction nanowire array that operates in electrolyte is reported, demonstrating photoresponse controlled by different wavelengths light. Significantly, rational decoration ruthenium oxides (RuOx ) layer on nanowires...
Abstract Light‐emitting diodes and photodiodes, often acting as transmitters receivers, are two key optical components for constructing an communication system. Recently, solar‐blind wireless (SB‐OWC) has emerged a promising free‐space platform due to its unique advantages, including low background noise, high security, non‐line‐of‐sight ability. However, the development of deep ultraviolet (DUV) emitters detectors is still in early stages with relatively efficiency poor detection...
High-quality imaging units are indispensable in modern optoelectronic systems for accurate recognition and processing of optical information. To fulfill massive complex tasks the digital age, devices with remarkable photoresponsive characteristics versatile reconfigurable functions on a single-device platform demand but remain challenging to fabricate. Herein, an AlGaN/GaN-based double-heterostructure is reported, incorporated unique compositionally graded AlGaN structure generate channel...
Optoelectronic synapses, leveraging the integration of classic photo-electric effect with synaptic plasticity, are emerging as building blocks for artificial vision and photonic neuromorphic computing. However, fundamental working principles most optoelectronic synapses mainly rely on physical behaviors while missing chemical-electric processes critical mimicking biorealistic functionality. Herein, we report a photoelectrochemical device based p-AlGaN/n-GaN semiconductor nanowires to...
The development of an efficient and durable photoelectrode is critical for achieving large-scale applications in photoelectrochemical water splitting. Here, we report a unique composed reconfigured gallium nitride nanowire-on-silicon wafer loaded with Au nanoparticles as cocatalyst that achieved impressive applied bias photon-to-current efficiency 10.36% under AM 1.5G one sun illumination while exhibiting stable PEC hydrogen evolution over 800 h at high current density. Specifically, by...
Abstract Van der Waals heterojunctions made of 2D materials offer competitive opportunities in designing and achieving multifunctional high‐performance electronic optoelectronic devices. However, due to the significant reverse tunneling current such thin p–n junctions, a low rectification ratio along with large is often inevitable for heterojunctions. Here, vertically stacked van heterojunction (vdWH) device reported consisting black arsenic phosphorus (AsP) indium selenide (InSe), which...
Abstract Searching for power‐independent, compact, and highly environment‐sensitive photodetectors is a critical step towards the realization of next‐generation energy‐efficient sustainable integrated optoelectronic systems. Particularly, deep ultraviolet (UV) band, which has large photon energy, extremely suitable environment monitoring invisible light communication application. Herein, demonstration self‐powered UV solar‐blind in photoelectrochemical (PEC) cell configuration reported,...