A5071056823- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Photocathodes and Microchannel Plates
- ZnO doping and properties
- Nanowire Synthesis and Applications
- Optical Wireless Communication Technologies
- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- IoT and Edge/Fog Computing
- Antenna Design and Analysis
- Microwave Engineering and Waveguides
- Advanced Memory and Neural Computing
- Organic Light-Emitting Diodes Research
- Perovskite Materials and Applications
- Gas Sensing Nanomaterials and Sensors
- Artificial Intelligence in Healthcare
- Millimeter-Wave Propagation and Modeling
- 2D Materials and Applications
- Semiconductor materials and devices
- Analytical Chemistry and Sensors
- Cloud Computing and Resource Management
- Radio Frequency Integrated Circuit Design
- Advanced Optical Sensing Technologies
- Image Retrieval and Classification Techniques
- Advanced Image and Video Retrieval Techniques
University of Science and Technology of China
2016-2025
Mehran University of Engineering and Technology
2016
The investigation of electrical and optical properties micro-scale AlGaN deep ultraviolet (DUV) light-emitting diodes (LEDs) emitting at <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mo>∼<!-- ∼ --></mml:mo> </mml:mrow> <mml:mn>275</mml:mn> <mml:mspace width="thickmathspace" /> <mml:mi mathvariant="normal">n</mml:mi> mathvariant="normal">m</mml:mi> </mml:math> was carried out, with an emphasis on fabricated devices having a...
The p-n junction with bipolar characteristics sets the fundamental unit to build electronics while its unique rectification behavior constrains degree of carrier tunability for expanded functionalities. Herein, a bipolar-junction photoelectrode employed gallium nitride (GaN) homojunction nanowire array that operates in electrolyte is reported, demonstrating photoresponse controlled by different wavelengths light. Significantly, rational decoration ruthenium oxides (RuOx ) layer on nanowires...
Abstract Light‐emitting diodes and photodiodes, often acting as transmitters receivers, are two key optical components for constructing an communication system. Recently, solar‐blind wireless (SB‐OWC) has emerged a promising free‐space platform due to its unique advantages, including low background noise, high security, non‐line‐of‐sight ability. However, the development of deep ultraviolet (DUV) emitters detectors is still in early stages with relatively efficiency poor detection...
The accurate and efficient diagnosis of breast cancer is extremely necessary for recovery treatment in early stages IoT healthcare environment. Internet Things has witnessed the transition life last few years which provides a way to analyze both real-time data past by emerging role artificial intelligence mining techniques. current state-of-the-art method does not effectively diagnose stages, most ladies suffered from this dangerous disease. Thus, detection significantly poses great...
In this Letter, we perform a comprehensive investigation on the optical characterization of micro-sized deep-ultraviolet (DUV) LEDs (micro-LEDs) emitting below 280 nm, highlighting light extraction behavior in relation to design chip sidewall angle. We found that micro-LEDs with smaller inclined angle ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mo>∼</mml:mo> </mml:mrow> <mml:msup> <mml:mn>33</mml:mn> <mml:mo>∘</mml:mo>...
Abstract The emerging photoelectrochemical‐type photodetector (PEC‐PD), because of its unique device architecture by using an aqueous electrolyte, is naturally applicable in the pursuit underwater optical communication without sophisticated packaging and assembling. Unfortunately, traditional PEC detecting process typically involves a large electrochemical workstation with long cables wire connections for photo signal acquisition, which hinders applications wireless communication. In this...
Abstract The carrier transport dynamics at the surface/interface of semiconductors determine electronic and optical properties devices. Thus, precise control their dynamic processes while understanding nature these characteristics is crucial for modulating device functionalities. Here, a photoelectrochemical‐type photosensor built using monocrystalline p‐GaN nanowires on Si platform, which unambiguously exhibits either positive or negative photocurrent upon different light illumination. Such...
Optical wireless communication (OWC) systems are emerging as a crucial technique for the development of next-generation data transmission and acquisition, with particular interest in solar-blind deep-ultraviolet (DUV) well visible-light (VL) band, owing to their superior advantages either free space or underwater application scenarios. A light-emitting device, which normally acts signal transmitter OWC, capable generating dual wavelengths, would certainly expand capacity functionality OWC....
Abstract Underwater optical communication (UOC) has attracted considerable interest in the continuous expansion of human activities marine/ocean environments. The water‐durable and self‐powered photoelectrodes that act as a battery‐free light receiver UOC are particularly crucial, they may directly face complex underwater conditions. Emerging photoelectrochemical (PEC)‐type photodetectors appealing owing to their intrinsic aqueous operation characteristics with versatile tunability...
Abstract The operational principle of semiconductor devices critically relies on the band structures that ultimately govern their charge‐transfer characteristics. Indeed, precise orchestration structure within devices, notably at surface and corresponding interface, continues to pose a perennial conundrum. Herein, for first time, this work reports novel postepitaxy method: thickness‐tunable carbon layer decoration continuously manipulate bending III‐nitride semiconductors. Specifically,...
The physicochemical properties of a semiconductor surface, especially in low-dimensional nanostructures, determine the electrical and optical behavior devices. Thereby, precise control surface is prerequisite for not only preserving intrinsic material quality but also manipulating carrier transport promoting device characteristics. Here, we report facile approach to suppress photocorrosion effect while boosting photoresponse performance n-GaN nanowires constructed photoelectrochemical-type...
Abstract The elementary electronic‐logic‐gates, performing basic logic functions using electric signals as input, act a building block of modern digital circuits. Intriguingly, the optoelectronic‐logic‐gates (OLGs), composed optical devices, are emerging new platform which enables faster and large‐capacity data transmission processing by photons input. However, strict operation principle classic for example, unidirectional photoresponse photodetector, restricts functional enrichment OLGs....
Abstract The progressive downscaling of silicon‐based microelectronic devices delivers compact and advanced integrated circuits for fast data processing computing. Similarly, the miniaturization conventional optoelectronics is also an important frontier technology emerging lighting, imaging, communication, sensing. Herein, this study reports a miniature dual‐functional diode (DF‐diode) with both light‐emitting light‐detecting functionalities. proposed micro‐scale DF‐diode exhibits record...
Detection of Heart Disease (HD) by using models machine learning (ML) is very effective in early stages. The HD treatment and recovery if detected the disease at initial identification techniques has been developed to assist physicians. In this study we proposed an Identification system ML classify healthy subjects. Sequential backward selection feature algorithm was used select more appropriate features increase classification accuracy reduced computational time predictive system. Cleveland...
Abstract Multiple‐band and spectrally distinctive photodetection play critical roles in building next‐generation colorful imaging, spectroscopy, artificial vision, optically controlled logic circuits of the future. Unfortunately, it remains challenging for conventional semiconductor photodetectors to distinguish different spectrum bands with photon energy above bandgap material. Herein, first time, a photocurrent polarity‐switchable photoelectrochemical device composed group III‐nitride...
Abstract Optical wireless communication (OWC) in the deep‐ultraviolet (DUV) band requires an efficient DUV light source with large bandwidth characteristics. In this work, a feasible approach is reported to enlarge output power as well of light‐emitting diode (LED) by embedding SiO 2 ‐based microcavity on which aluminum (Al) reflector simultaneously deposited. Consequently, one hand, Al‐reflector can facilitate photon escape from LED increase extraction efficiency, thus enhancing devices. On...
Abstract In this work, we design and fabricate a deep ultraviolet (DUV) light-emitting array consisting of 10 × micro-LEDs ( μ -LEDs) with each device having 20 m in diameter. Strikingly, the demonstrates significant enhancement total light output power by nearly 52% at injection current 100 mA, comparison to conventional large LED chip whose emitting area is same as array. A much higher (~22%) peak external quantum efficiency, well smaller efficiency droop for -LED array, was also achieved....
In this work, we demonstrate a straightforward and effective strategy, so called perimeter-to-area ratio (P/A ratio) engineering, to enhance the optical performance of deep-ultraviolet micro-scale LED (DUV <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> -LEDs). Specifically, designed fabricated three types DUV -LEDs architectures with circle, pentagon, quadrangle shapes...
Abstract Low‐dimensional semiconductor nanostructures, particularly in the form of nanowire configurations with large surface‐to‐volume‐ratio, offer intriguing optoelectronic properties for advancement integrated photonic technologies. Here, a bias‐controlled, superior dual‐functional broadband light detecting/emitting diode enabled by constructing aluminum‐gallium‐nitride‐based on silicon‐platform is reported. Strikingly, exhibits stable and high responsivity (R) over 200 mAW −1 covering an...
Abstract Asymmetric‐type UV photodetectors have attracted extensive interest for their applications in modern optoelectronics. Conventional fabrication approaches asymmetric metal contacts typically cause damage at the metal‐semiconductor interface, leading to Fermi level pinning and further limiting barrier height adjustability functionality. Herein, first time, van der Waals (vdW) contact on wide bandgap semiconductor gallium‐nitride (GaN) is successfully fabricated achieve mitigation of...