A5077506146- Ga2O3 and related materials
- ZnO doping and properties
- GaN-based semiconductor devices and materials
- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- Semiconductor materials and devices
- Electronic and Structural Properties of Oxides
- Advanced Photocatalysis Techniques
- Structural Behavior of Reinforced Concrete
- 2D Materials and Applications
- Structural Response to Dynamic Loads
- Silicon Carbide Semiconductor Technologies
- Radio Frequency Integrated Circuit Design
- MXene and MAX Phase Materials
- Graphene research and applications
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Wireless Power Transfer Systems
- Civil and Geotechnical Engineering Research
- Energy Harvesting in Wireless Networks
- Power Systems and Renewable Energy
- Crystallography and molecular interactions
- Orbital Angular Momentum in Optics
Xidian University
2002-2025
China Huadian Corporation (China)
2025
ETH Zurich
2024
Ocean University of China
2023-2024
State Grid Corporation of China (China)
2021-2024
China Southern Power Grid (China)
2014-2024
Shandong University
2024
Guizhou University
2008-2023
Jilin University
2019-2023
Yunnan Agricultural University
1997-2023
Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to perform beyond wide counterparts GaN and SiC. However, the reported power figure-of-merit hardly can exceed, which is far below projected material limit. Major obstacles high breakdown voltage requires low doping PN junction termination, contradicting with specific on-resistance simultaneous achieving of n- p-type doping, respectively. In this work, we demonstrate that heterojunction diodes overcome above...
Orbital angular momentum (OAM) has aroused a widespread interest in many fields, especially telecommunications due to its potential for unleashing new capacity the severely congested spectrum of commercial communication systems. Beams carrying OAM have helical phase front and field strength with singularity along axial center, which can be used information transmission, imaging particle manipulation. The number orthogonal modes single beam is theoretically infinite each mode an element...
In this letter, we report on high performance depletion/enhancement (D/E)-mode beta-Ga2O3 insulator (GOOI) field-effect transistors (FETs) with record drain currents (ID) of 600/450 mA/mm, which are nearly one order magnitude higher than any other reported ID values. The threshold voltage (VT) can be modulated by varying the thickness films and E-mode GOOI FET simply achieved shrinking film thickness. Benefiting from good interface between SiO2 wide bandgap beta-Ga2O3, a negligible transfer...
Selenium has attracted intensive attention as a promising material candidate for future optoelectronic applications. However, selenium strong tendency to grow into nanowire forms due its anisotropic atomic structure, which largely hindered the exploration of potential In this work, using physical vapor deposition method, we have demonstrated synthesis large-size, high-quality 2D nanosheets, minimum thickness could be thin 5 nm. The Se nanosheet exhibits in-plane property, is determined by...
We have demonstrated that depletion/enhancement-mode b-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing highly doped nano-membrane as the channel. transistor (GOOI FET) shows on/off ratio 1010 and low subthreshold slope 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, resolution thermo-reflectance imaging technique applied to study self-heating...
Abstract Gallium oxide (Ga 2 O 3 ), an emerging ultra-wide-bandgap semiconductor, has the desirable properties of a large bandgap 4.6–4.9 eV, estimated critical breakdown field 8 MV cm −1 , decent electron mobility 250 V s and high theoretical Baliga figures merit (BFOMs) around 3000. Bolstered by their capability economical growth technique for high-quality bulk substrate, β -Ga -based materials devices have been highly sought after in recent years power electronics solar-blind ultraviolet...
In this work, we show that the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky Barrier Diode (SBD) can perform beyond 1-D unipolar limit of SiC and GaN by employing a deep trench with filled thick SiO layer structure to enhance breakdown voltage...
We report on achieving high-performance β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> power devices through the incorporation of p-type NiO xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> . p-n heterojunction (HJ) diodes, as well novel HJ gate (G) field-effect-transistors (HJ-FETs), have all demonstrated state-of-the-art Baliga's figure merit (P-FOM). The diode is introduced...
Abstract With the advantage of fast charge transfer, heterojunction engineering is identified as a viable method to reinforce anodes' sodium storage performance. Also, vacancies can effectively strengthen Na + adsorption ability and provide extra active sites for adsorption. However, their synchronous rarely reported. Herein, hybrid Co 0.85 Se/WSe 2 heterostructure with Se N‐doped carbon polyhedron (CoWSe/NCP) has been fabricated first time via hydrothermal subsequent selenization strategy....
Negative capacitance (NC) FETs with channel lengths from 30 nm to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$50~\mu \text{m}$ </tex-math></inline-formula> , gated ferroelectric hafnium zirconium oxide are fabricated on fully depleted silicon-on-insulator (FDSOI) substrates. Enhanced due NC, hysteresis-free operation, and improved subthreshold slope observed. The NC effect leads enhancement of drain...
In this letter, we report on demonstrating high-performance field-plated lateral <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diode (SBD) a sapphire substrate with reverse blocking voltage of more than 3 kV and low dc specific...
In this letter, we report on the improvement of atomic layer deposited (ALD) Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> / <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> –Ga (-201) interface quality through piranha pretreatment and postdeposition annealing (PDA). The high is verified via temperature...
In this article, we report on demonstrating the first vertical β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> junction barrier Schottky (JBS) diode with implementation of thermally oxidized p-type NiO to compensate for dilemma forfeit . With wide-bandgap NiOx, JBS diodes an area 100 × μm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> achieve a breakdown voltage (BV) and...
This work reports on implementing Mg implanted Edge Termination (ET), a simple but very useful technique to increase the breakdown voltage (BV) of vertical β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diode (SBD). With this ET, SBD demonstrates reverse blocking 1.55 kV and low specific on-resistance (RON,sp) 5.1 mQ · cm <sup...
In this work, we have demonstrated highperformance lateral β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> metal-oxide-semiconductor field-effect transistors (MOSFETs) with state-of-art power figure-of-merit (P-FOM) and breakdown voltage (BV) by adopting a T-shape gate field-plate source connected structures. Depletion-mode (D-mode) MOSFETs gate-to-drain distance (LGD) of 4.8...
In this paper, we show that high-performance β-Ga2O3 hetero-junction barrier Schottky (HJBS) diodes with various periodic fin widths of 1.5/3/5 μm are demonstrated the incorporation p-type NiOx. The HJBS diode achieves a low specific on-resistance (Ron,sp) 1.94 mΩ cm2 breakdown voltage 1.34 kV at width 3 μm, translating to direct-current Baliga's power figure merit (PFOM) 0.93 GW/cm2. addition, find by shrinking width, reverse leakage current is minimized due enhanced sidewall depletion...
Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga2O3) has emerged as a highly viable semiconductor for new researches. This article mainly focuses on growth processes, characteristics, applications Ga2O3. Compared with single crystals epitaxial other wide-bandgap semiconductors, large-size high-quality β-Ga2O3 can be efficiently grown low cost, making them competitive. Thanks availability crystals, films, high-performance devices based Ga2O3 go...
Transition metal pentatelluride ZrTe5 is a versatile material in condensed-matter physics and has been intensively studied since the 1980s. The most fascinating feature of that it 3D Dirac semimetal which linear energy dispersion all three dimensions momentum space. Structure-wise, layered held together by weak interlayer van der Waals force. combination its unique band structure 2D atomic provides fertile ground for more potential exotic physical phenomena related to semimentals. However,...
In this letter, we propose to implement a microwave lateral GaN Schottky barrier diode (SBD) in designed 5.8-GHz rectifier circuit for future high-power and high-efficiency wireless power transfer. The low-pressure chemical vapor deposition SiN-passivated SBD demonstrates low turn-on voltage of 0.38 V, on-resistance 4.5 Ω, junction capacitance 0.32 pF at 0-V bias, high breakdown 164 which are essentials rectifying application. By incorporating well-designed circuit, an unprecedented...
Abstract The potassium‐ion battery (PIB) has emerged as a promising alternative to lithium‐ion batteries. major challenges confronted by PIB anodes lie in sluggish kinetics and poor cycling stability owing the inherent large K + size. Here, hybrid of ball‐cactus‐like Bi nanospheres embedded 3D N‐riched carbon nanonetworks (Bi NSs/NCNs) is designed synthesized electrospinning. As an anode, NSs/NCNs exhibits unprecedented rate (489.3 mAh g −1 at 50 A ) long‐cycling performance (457.8 10 after...
This review systematically summarizes the latest research advances of AlN crystals grown by PVT method and their applications.