Yanni Zhang

ORCID: 0000-0001-7675-3947
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About
Contact & Profiles
Research Areas
  • Coal Properties and Utilization
  • Ga2O3 and related materials
  • Thermochemical Biomass Conversion Processes
  • GaN-based semiconductor devices and materials
  • Combustion and Detonation Processes
  • Hydrocarbon exploration and reservoir analysis
  • Geoscience and Mining Technology
  • Coal and Its By-products
  • ZnO doping and properties
  • EEG and Brain-Computer Interfaces
  • Electronic and Structural Properties of Oxides
  • Fire dynamics and safety research
  • Semiconductor materials and devices
  • Gas Sensing Nanomaterials and Sensors
  • Thermal and Kinetic Analysis
  • Advanced Chemical Sensor Technologies
  • Analytical Chemistry and Sensors
  • Heat Transfer and Optimization
  • Silicon Carbide Semiconductor Technologies
  • Microfluidic and Capillary Electrophoresis Applications
  • Neural dynamics and brain function
  • Coal and Coke Industries Research
  • Heat Transfer Mechanisms
  • Analytical Chemistry and Chromatography
  • Advancements in Battery Materials

Technical University of Munich
2025

Xi'an University of Science and Technology
2013-2024

Xinjiang Medical University
2023-2024

Guangzhou Medical University
2021-2024

Fifth Affiliated Hospital of Xinjiang Medical University
2023-2024

Shaanxi Normal University
2021-2024

University of Jinan
2023-2024

Wenzhou Medical University
2024

Beijing Forestry University
2024

Ministry of Natural Resources
2020-2023

Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to perform beyond wide counterparts GaN and SiC. However, the reported power figure-of-merit hardly can exceed, which is far below projected material limit. Major obstacles high breakdown voltage requires low doping PN junction termination, contradicting with specific on-resistance simultaneous achieving of n- p-type doping, respectively. In this work, we demonstrate that heterojunction diodes overcome above...

10.1038/s41467-022-31664-y article EN cc-by Nature Communications 2022-07-06

The involvement of circulating microRNAs (miRNAs) in cancer and their potential as biomarkers diagnosis prognosis are becoming increasingly appreciated; however, little is known about miRNA profiles astrocytomas. In our study, we performed genome-wide serum analysis by the Solexa sequencing followed validation conducted training verification sets with a stem-loop quantitative reverse-transcription PCR (RT-qPCR) assay from samples 122 untreated astrocytomas patients (WHO grades III-IV) 123...

10.1002/ijc.27657 article EN International Journal of Cancer 2012-06-02

This work reports on implementing Mg implanted Edge Termination (ET), a simple but very useful technique to increase the breakdown voltage (BV) of vertical β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diode (SBD). With this ET, SBD demonstrates reverse blocking 1.55 kV and low specific on-resistance (RON,sp) 5.1 mQ · cm <sup...

10.1109/led.2019.2939788 article EN IEEE Electron Device Letters 2019-09-06

OBJECTIVE—This article tests the hypothesis that women with impaired glucose tolerance (IGT) have same pregnancy outcomes as those of their counterparts normal tolerance. RESEARCH DESIGN AND METHODS—From December 1998 to 1999, 84 90 antenatal care base units (ACBUs) under Tianjin Antenatal Care Network in China participated first screening program for gestational diabetes mellitus (GDM). A total 9,471 pregnant participating ACBUs were screened. Of screened, 154 positive IGT. women, 102 opted...

10.2337/diacare.25.9.1619 article EN Diabetes Care 2002-09-01

In this work, we have demonstrated normallyoff β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> metal-oxide-semiconductor field-effect transistor (MOSFET) with the ferroelectric charge storage gate stack structure. Saturation currents of 18.3 and 16.0 mA/mm were achieved in Depletion (D-) Enhancement (E-) mode device, respectively, which shows negligible current reduction. Steep...

10.1109/led.2020.2970066 article EN IEEE Electron Device Letters 2020-01-28

In this work, an enhancement-mode (E-mode) β-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) has been achieved by incorporating a laminated-ferroelectric charge storage gate (L-FeG) structure [Al2O3/HfO2/Al2O3/Hf0.5Zr0.5O2 (HZO) of 10/5/2/16 nm]. The band diagram between L-FeG dielectrics (Al2O3, HfO2, and HZO) was determined x-ray photoelectron spectroscopy. After applying pulse with intensity +18 V width 1 ms, the saturation current E-mode device measured to be 23.2 mA/mm,...

10.1063/5.0010561 article EN Applied Physics Letters 2020-06-15

Background Claudin18.2 (CLDN18.2) is a tight junction protein that has been identified as clinically proven target in gastric cancer. Stimulation of 4-1BB with agonistic antibodies also promising strategy for immunotherapy and + T cells were reported to be present within the tumor microenvironment patients However, hepatotoxicity-mediated by activation was observed clinical trials anti-4-1BB monoclonal antibodies. Methods To specifically activate avoid on-target liver toxicity, we developed...

10.1136/jitc-2023-006704 article EN cc-by-nc Journal for ImmunoTherapy of Cancer 2023-06-01

Novel films on Ti-based orthopedic implants for localized antimicrobial delivery, which comprises dual-diameter TiO2 nanotubes with the inner layers of compact and fluorine-free oxide tightly bonding to Ti, were formed by voltage-increased anodization F- sedimentation procedure. The closely aligned structured upper 35 70 nm diametric tubes as nanocaps, respectively, underlying 140 nanoreservoirs. Followed loading ponericin G1 (a kind peptide (AMP)) into vacuum-assisted physisorption,...

10.1021/acsami.7b00322 article EN ACS Applied Materials & Interfaces 2017-02-27
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