A5029721135- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- Energy Harvesting in Wireless Networks
- Semiconductor materials and devices
- Electronic and Structural Properties of Oxides
- Wireless Power Transfer Systems
- Silicon Carbide Semiconductor Technologies
- Radio Frequency Integrated Circuit Design
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
- Full-Duplex Wireless Communications
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Photocatalysis Techniques
- Aerospace and Aviation Technology
- Acoustic Wave Resonator Technologies
- Energy Efficient Wireless Sensor Networks
- Wireless Networks and Protocols
- Advanced Decision-Making Techniques
- Antenna Design and Analysis
- Thin-Film Transistor Technologies
- Mobile Ad Hoc Networks
- Microwave Dielectric Ceramics Synthesis
- Military Defense Systems Analysis
- Superconducting and THz Device Technology
Xidian University
2018-2025
Air Force Engineering University
2024
Zhejiang University
2012
Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to perform beyond wide counterparts GaN and SiC. However, the reported power figure-of-merit hardly can exceed, which is far below projected material limit. Major obstacles high breakdown voltage requires low doping PN junction termination, contradicting with specific on-resistance simultaneous achieving of n- p-type doping, respectively. In this work, we demonstrate that heterojunction diodes overcome above...
In this letter, we report on demonstrating high-performance field-plated lateral <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diode (SBD) a sapphire substrate with reverse blocking voltage of more than 3 kV and low dc specific...
In this article, we report on demonstrating the first vertical β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> junction barrier Schottky (JBS) diode with implementation of thermally oxidized p-type NiO to compensate for dilemma forfeit . With wide-bandgap NiOx, JBS diodes an area 100 × μm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> achieve a breakdown voltage (BV) and...
This work reports on implementing Mg implanted Edge Termination (ET), a simple but very useful technique to increase the breakdown voltage (BV) of vertical β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diode (SBD). With this ET, SBD demonstrates reverse blocking 1.55 kV and low specific on-resistance (RON,sp) 5.1 mQ · cm <sup...
In this letter, we propose to implement a microwave lateral GaN Schottky barrier diode (SBD) in designed 5.8-GHz rectifier circuit for future high-power and high-efficiency wireless power transfer. The low-pressure chemical vapor deposition SiN-passivated SBD demonstrates low turn-on voltage of 0.38 V, on-resistance 4.5 Ω, junction capacitance 0.32 pF at 0-V bias, high breakdown 164 which are essentials rectifying application. By incorporating well-designed circuit, an unprecedented...
In this letter, we report on demonstrating a high performance vertical β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diode (SBD) based self-aligned beveled fluorine plasma treatment (BFPT) edge termination structure. Owing to the strong electronegativity of ions, fixed negative charges introduced by F ions during BFPT process alleviate electric field crowding,...
In this letter, we report on demonstrating high-performance lateral GaN Schottky barrier diode (SBD) silicon substrate with low turn-on voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> ), high breakdown (BV) reverse leakage current (IR), and power figure of merit (P-FOM) through anode engineering technique. Lateral SBD anode-cathode distance (L xmlns:xlink="http://www.w3.org/1999/xlink">AC</sub> ) 25 μm demonstrates a V = 0.38...
In this work, we have achieved novel lateral enhancement-mode (E-M) and depletion-mode (D-M) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 metal-oxide-semiconductor junction field-effect- transistors (MOS-JFETs) featuring a low gate leakage current ( notation="LaTeX">$\text{I}_{{\text {G}}}$ ) large swing. Ascribing to the high-quality SiO2 layer above P-NiO...
In this work, we propose combining a low work function anode metal and junction barrier Schottky structure to simultaneously achieve turn-on voltage (Von) high breakdown (BV), which alleviates the dilemma that BV requires height (SBH) Von. Molybdenum (Mo) is used serve as reduce SBH facilitate fast To resolve related issue, p-NiO/n-Ga2O3-based heterojunction enhance β-Ga2O3 sidewall depletion during reverse state improve BV. With such design, Von = 0.64 V(@1A/cm2) 2.34 kV well specific...
In this paper, we report on achieving the first high performance lateral <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diode (SBD) sapphire substrate via transferring nano-membrane channel from a low dislocation density bulk substrate. Non...
In this letter, we report the achievement of a high-performance lateral GaN Schottky barrier diode (SBD) on silicon substrate with low turn- ON voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{ \mathrm{ON}}$ </tex-math></inline-formula> ) 0.35 V and tungsten (W) as anode. Non-field-plated SBDs anode–cathode distances notation="LaTeX">${L}_{\text {AC}}$ 6, 10, 15, 20, notation="LaTeX">$25~\mu...
Both dc and OFF-state stress characteristics of vertical beta-gallium oxide (β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) Schottky barrier diodes (SBDs) with or without ion-implanted edge termination (ET) were comparatively analyzed in this work. An implanted ET by He Mg ions can effectively increase breakdown voltage (BV) from 0.5 to 1.0 1.5 kV, respectively, sacrificing...
This paper proposes a terminal matching network (TMN) technology, which can realize wideband of microwave rectifiers in wide input power range. At the same time, it is proposed to ultra-wideband by connecting two TMN branches different frequencies parallel. In order verify this theory, using single and dual are designed realized based on high-power GaN Schottky barrier diodes (SBDs). The rectifier achieves peak efficiency 72.3% conversion more than 70% frequency range 1.8–2.7 GHz at 1 W...
In this work, a 710 GHz GaN Schottky barrier diode (SBD) with high breakdown voltage was proposed and fabricated. The high-frequency SBDs suffer from the trade-off between frequency (fc) (Vbr). We solved problem gradient doping technique, fc Vbr were improved at same time. For doped SBD, concentration of drift layer increases gradually top to bottom. Then, capacitance reduced by lightly surface region, while series resistance heavily bottom region. As result, improved, obtained. addition,...
In this article, we have carried out a comprehensive study on the wireless power transfer (WPT) concept from rectifier circuit construction and state-of-art GaN Schottky barrier diode (SBD) device technology to WPT system demonstration. Benefited wide bandgap, high mobility, saturation velocity of gallium nitride (GaN) two-dimensional electron gas, engineered lateral SBD with low turn-ON voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
We demonstrate high-performance AlGaN/GaN lateral Schottky barrier diodes (SBDs) with Mo anode and low turn-on voltage of 0.31 V. SBDs to cathode spacing 6/10/15/20/25 μm achieve a breakdown (BV) 0.83/1.23/1.62/2.46/2.65 kV, yielding power figure-of-merit (FOM) 1.53/1.82/1.77/2.65/2.12 GW cm−2. The FOM 2.65 cm−2 BV kV are the best results on silicon substrate. Combined good dynamic performance only 10% Ron increase when switched from −600 V stress for 10 ms, GaN verify their great promise...
Herein, a high‐performance β‐gallium oxide (β‐Ga 2 O 3 ) metal–oxide–semiconductor field‐effect transistor (MOSFET) on sapphire substrate with high breakdown voltage of more than 800 V and high‐power figure merit 86.3 MV cm −2 is demonstrated. The atomic force microscopy (AFM) image Raman peaks that are first characterized to ensure nanomembrane quality used for the device fabrication. A saturation drain current 231.8 mA mm −1 , an R ON,sp 7.41 mΩ ON/OFF ratio 10 8 subthreshold swing 86 mV...
In this article, a novel device structure of an enhancement-mode (E-mode) Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> MOSFET is proposed based on the combination p-NiO/n-Ga heterojunction (PN-HJ) and tested through TCAD simulation. The carrier transport model, materials implementation, as well crucial parameters are validated against measured experimental data depletion-mode...
We report on demonstrating the first Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.05</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.95</sub> N-channel enhancement-mode (E-mode) p-GaN gate injection transistors (GITs) with an adjustable threshold voltage ( <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\textsf {T}}$ </tex-math></inline-formula> ) of 4–7-V by controlling number...
The leakage mechanism of quasi-vertical GaN Schottky barrier diodes (SBDs) with ultra-low turn-on voltage has been investigated. By using a tungsten anode, the is 0.39 V and average breakdown electric field above 1 MV cm−1. Under low reverse bias, thermionic emission dominated. When bias increases to certain value, increased promotes electron hopping along threading dislocation in bulk layers, variable range (VRH) becomes main current mechanism. difference between tungsten-anode nickel-anode...
In this article, we report on demonstrating high-performance AlGaN/GaN high-electron-mobility-transistor (HEMT) free-standing GaN (FS-GaN) substrate with low contact resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{C}$ </tex-math></inline-formula> ) and high breakdown voltage (BV). Non-regrowth as notation="LaTeX">$0.23 \Omega \cdot $ mm was achieved by using the self-aligned Ohmic etching...
In this letter, we proposed to implement a self-aligned and low capacitance GaN microwave diode in an X-band rectifier circuit for high-efficiency high-power power transmission application. Benefited from the advanced structural design, demonstrates on-resistance of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.61 {\Omega } \cdot $ </tex-math></inline-formula> mm, junction (...