A5100743162- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- ZnO doping and properties
- Quantum optics and atomic interactions
- Cold Atom Physics and Bose-Einstein Condensates
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Radio Frequency Integrated Circuit Design
- Luminescence Properties of Advanced Materials
- Thin-Film Transistor Technologies
- Quantum Information and Cryptography
- Advanced Nanomaterials in Catalysis
- Extracellular vesicles in disease
- Electronic and Structural Properties of Oxides
- Ionosphere and magnetosphere dynamics
- Environmental remediation with nanomaterials
- Adsorption and biosorption for pollutant removal
- Pharmaceutical and Antibiotic Environmental Impacts
- Orbital Angular Momentum in Optics
- Neural Networks and Reservoir Computing
- Random lasers and scattering media
- Metal and Thin Film Mechanics
Xidian University
2016-2025
Research Center for Eco-Environmental Sciences
2021-2025
Columbia University
2024-2025
University of Chinese Academy of Sciences
2021-2025
Affiliated Hospital of Hangzhou Normal University
2025
Chinese Academy of Sciences
2021-2024
Huazhong University of Science and Technology
2024
Nanchang Institute of Technology
2024
Beijing University of Technology
2024
Dalian University
2023
In this article, we demonstrate a novel E-mode HEMT featuring in situ AlN dielectric layer on p-GaN cap layer. Compared with conventional gate HEMT, the threshold voltage of AlN/p-GaN shifts from 1.8 to 3.9 V, and forward breakdown is increased 10.0 17.6 V. By considering 10 years' lifetime at 63% failure level, maximum applicable for reaches remarkable high value 12.1 V (E-model), which much higher than that 6.1 HEMT. addition, exhibits ON/OFF ratio <inline-formula...
In this work, we have achieved novel lateral enhancement-mode (E-M) and depletion-mode (D-M) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 metal-oxide-semiconductor junction field-effect- transistors (MOS-JFETs) featuring a low gate leakage current ( notation="LaTeX">$\text{I}_{{\text {G}}}$ ) large swing. Ascribing to the high-quality SiO2 layer above P-NiO...
In this letter, we demonstrated <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 lateral Schottky barrier diodes (SBDs) with breakdown voltage (BV) over 10 kV via anode engineering techniques. Post-anode deposition annealing (PAA) was implemented to enhance the height (SBH) minimize leakage current and suppress interface state density (...
In this letter, we report on demonstrating high-performance enhancement-mode (E-mode) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -channel GaN Fin Field-Effect Transistors (FinFETs) fabricated a proposed -GaN/AlN/AlGaN epitaxial structure with low sheet resistance of 14 notation="LaTeX">$\text{k}\Omega / {\unicode{0x25A1}} $ . Benefiting from the 25-nm-wide nanowires...
Cu-SSZ-13 catalyst is highly active for both NH3-SCO and NH3-SCR of NOx. NH3 conversion N2 selectivity were over 98% at 225–500 °C during NH3-SCO, while NOx remained above 91 98%, respectively, 150–500 NH3-SCR. N2O formation showed bimodal behavior with increasing temperature processes, higher amounts produced in the process. Increasing NO feed concentration enhanced low temperatures promoting high temperatures. Complete removal excessive can be achieved (e.g., 250 °C) by coupling catalyst....
In this letter, more than 3000 V reverse blocking Schottky-drainAlGaN-channelHEMTs are demonstrated for the first time. By using Schottky drain technology, forward breakdown voltage <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FB</sub> (at 10 μA/mm) is improved from 1850~2100 to 2200~2600 LGD = 22μm. Due high electric field of AlGaN material, xmlns:xlink="http://www.w3.org/1999/xlink">RB</sub> reaches as -1950 ~ -2200 V. For HEMTs with L...
In this article, the single event burnout (SEB) performances for 2DEG Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub> <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{Ga}_{{1}-{x}}\text{N}$ </tex-math></inline-formula> channel p-GaN gate high electron mobility transistors (HEMTs) have been investigated comprehensively to reveal failure mechanisms and broaden applications in harsh...
The high intake of high-fat diets and changes in sedentary lifestyles have led to an increase non-alcoholic fatty liver disease (NAFLD). This study aimed investigate the effect mechanism Pinocembrin (Pin) on NAFLD vivo vitro. pharmacodynamics Pin alone or combination with ML385 was assessed diet (HFD)-mediated mice. HepG2 cells were treated palmitic acid (PA)/oleic (OA) (1:2) as in-vitro model lipid deposition oxidative stress. roles glucose metabolism, inflammation, stress, Nrf2/HO-1/NF-κB...
Abstract Idiopathic pulmonary fibrosis (IPF) remains an incurable form of interstitial lung disease with sub‐optimal treatments that merely address adverse symptoms or slow fibrotic progression. Here, inhalable hsa‐miR‐30a‐3p‐loaded liposomes (miR‐30a) for the treatment bleomycin‐induced in mice are presented. It was previously found exosomes (Exo) derived from spheroid cells therapeutic multiple animal models and highly enriched hsa‐miR‐30a‐3p. The present study investigates this miRNA as a...
In this paper, a high breakdown voltage of more than 2200 V in high-electron-mobility transistors (HEMTs) with AlGaN channel and novel ohmic/Schottky-hybrid drain contact is achieved, which the record ever achieved on AlGaN-channel HEMTs. The fabricated device exhibits on/off ratio 7×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> low subthreshold swing 64 mV/decade, enabled by wet treatment. Furthermore, it excellent high-temperature...
In this work, frequency-dependent capacitances and conductance measurements are adopted to investigate high temperature characteristics of trap states in AlGaN/GaN/AlGaN double heterostructure electron mobility transistors (DH-HEMTs). It is found that fast slow present DH-HEMTs, while only traps exist AlGaN/GaN single (SH) HEMTs. the former, state density ranges from 4.6 × 1012 cm−2 eV−1 1.9 1013 located at an energy below conduction band between 0.273 eV 0.277 eV, deep decreases 2.4 8.7...
High-electron-mobility transistor (HEMT) with AlN/GaN superlattice (SL) channel has been demonstrated on a silicon substrate. High OFF-state breakdown voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BR</sub> of 670 (gate-drain spacing L xmlns:xlink="http://www.w3.org/1999/xlink">GD</sub> = 8 μm) along maximum output current 196 mA/mm, electron total mobility 507 cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> / V·s, and an...
Building an efficient quantum memory in high-dimensional Hilbert spaces is one of the fundamental requirements for establishing repeaters, where it offers many advantages over two-dimensional systems, such as a larger information capacity and enhanced noise resilience. To date, remains challenge to develop memory. Here, we experimentally realize that operational up 25 dimensions with storage efficiency close 60% fidelity $84.2\ifmmode\pm\else\textpm\fi{}0.6%$. The proposed approach exploits...
We report on demonstrating the first Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.05</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.95</sub> N-channel enhancement-mode (E-mode) p-GaN gate injection transistors (GITs) with an adjustable threshold voltage ( <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\textsf {T}}$ </tex-math></inline-formula> ) of 4–7-V by controlling number...