A5100416441- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Ga2O3 and related materials
- Semiconductor Quantum Structures and Devices
- Quantum Chromodynamics and Particle Interactions
- ZnO doping and properties
- Particle physics theoretical and experimental studies
- Advancements in Semiconductor Devices and Circuit Design
- Laser-induced spectroscopy and plasma
- High-Energy Particle Collisions Research
- Photocathodes and Microchannel Plates
- Black Holes and Theoretical Physics
- Radio Frequency Integrated Circuit Design
- Atomic and Molecular Physics
- Semiconductor materials and interfaces
- Metal and Thin Film Mechanics
- Advanced Chemical Physics Studies
- Plasma Diagnostics and Applications
- Thermal properties of materials
- Probabilistic and Robust Engineering Design
- Complex Network Analysis Techniques
- Nitric Oxide and Endothelin Effects
- Theoretical and Computational Physics
- Dental Erosion and Treatment
Xidian University
2014-2025
Sun Yat-sen University
2024
National Engineering Research Center of Electromagnetic Radiation Control Materials
2023-2024
Shanghai Institute of Optics and Fine Mechanics
2003-2023
Chinese Academy of Sciences
2023
Hangzhou Vocational and Technical College
2023
KU Leuven
2017-2021
IMEC
2017-2021
China Agricultural University
2020
Jiangsu Province Special Equipment Safety Supervision and Inspection Institute
2011-2016
Monolithic integration of a half bridge on the same GaN-on-Si wafer is very challenging because devices share common conductive Si substrate. In this letter, we propose to use GaN-on-SOI (silicon-on-insulator) isolate by trench etching through GaN/Si(111) layers and stopping in SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> buried layer. By well-controlled epitaxy device fabrication, high-performance 200 V enhancement-mode (e-mode)...
In this article, we demonstrate a novel E-mode HEMT featuring in situ AlN dielectric layer on p-GaN cap layer. Compared with conventional gate HEMT, the threshold voltage of AlN/p-GaN shifts from 1.8 to 3.9 V, and forward breakdown is increased 10.0 17.6 V. By considering 10 years' lifetime at 63% failure level, maximum applicable for reaches remarkable high value 12.1 V (E-model), which much higher than that 6.1 HEMT. addition, exhibits ON/OFF ratio <inline-formula...
Co-integration of the key power stage, namely gate drivers and half-bridge in a single-die solution, is tremendous inevitable challenge to realizing GaN integrated circuits (GaN ICs). In this letter, monolithically including were successfully fabricated on 200-mm engineered substrates Qromis substrate technology (QST <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">®</sup> ). Deep trench isolation together with buried oxide GaN-on-QST isolates...
In this work, fast sweeping characterization with an extremely short relaxation time was used to probe the V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> instability of p-GaN gate HEMTs. As ID-VG deceases from 5 ms μs, dramatically degenerates 3.13 1.76 V, meanwhile hysteresis deteriorates 22.6 mV 1.37 V. Positive bias temperature (PBTI) measurement by shows features a very shifting process but slower recovering process. D-mode HEMTs...
Abstract We develop a highly effective silole‐infiltrated photonic crystal (PC) film fluorescence sensor with high sensitivity, good selectivity and excellent reproducibility for Fe 3+ Hg 2+ ions. Hexaphenylsilole (HPS) infiltrated PCs show amplified due to the slow photon effect of PC because emission wavelength HPS is at blue band edge selected PC’s stopband. The can be quenched significantly by /Hg ions owing electron transfer between metal enhances sensitivity detection, detection limit...
The backgating effect on trench-isolated enhancement-mode p-GaN devices fabricated 200-mm GaN-on-SOI was investigated. We show that to minimize the in monolithically integrated half-bridge, sources of both low side and high need be connected their respective fully isolated Si(111) device layers keep substrates at equipotential.
In this work, a high-performance AlGaN-channel Schottky barrier diode with high breakdown voltage of 2.23 kV defined at anode leakage current 1 μA and power figure-of-merit 614 MW/cm2 is demonstrated. Anode (VA) clear linear relationship as function temperature from 300 to 525 K shows great potential for sensors, maximum sensitivity 2.0 mV/K density (IA) 6.28 × 10−8 A obtained, satisfying the low consumption requirement. Meanwhile, corresponding ln(–I) vs fixed VA –15 V 5.0 mA/K, suppressed...
Schottky-type p-GaN gate HEMTs with a low forward bias breakdown voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G-BD</sub> are vulnerable to failures during switching. In this work, high-performance MIM/p-GaN TiN/Al xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /TiN (30/3/40 nm) MIM structure on top of layer proposed. Compared the conventional reference, successfully promotes...
This paper presents an extensive investigation of the impact resistivity silicon substrate on vertical leakage and charge trapping in 200 V GaN-on-Si enhancement-mode high-electron mobility transistors. Three wafers having different resistivities were submitted to combined DC characterization, step-stress experiments, electroluminescence (EL) analysis. The results described within this demonstrate that: 1) use a highly resistive can increase breakdown voltage transistors, due fact that drop...
In this work, GaN HEMTs on 6-inch sapphire substrates are successfully demonstrated for potential 1700 V power applications. The 1.5 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> buffer features a well-controlled crystal quality and uniformity. Benefiting from the insulating substrate, vertical leakage channel is cut off, lateral parasitic at epitaxy/substrate...
This study aimed to investigate the effects of magnesium-doped bioactive glass (Mg-BG) on mineralization, odontogenesis, and anti-inflammatory abilities human dental pulp stem cells (hDPSCs). Mg-BG powders with different Mg concentrations were successfully synthesized via sol-gel method evaluated using x-ray diffraction, Fourier-transform infrared spectroscopy, scanning electron microscopy, transmission microscopy. Apatite formation was observed surfaces materials after soaking in simulated...
In this Letter, we present enhancement-mode (E-mode) GaN/AlGaN p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) with excellent performance by introduction of polarization induced tunnel junctions to enhance the source/drain (S/D) contacts and lateral current spreading in access regions. The S/D contact resistance (RC) 19.84 Ω·mm at voltage 5 V was obtained. fabricated GaN p-MOSFET has a threshold (VTH) −0.86 V, high drain (ID) up 115 mA/mm, low on-resistance (Ron) 52.6...
To get a better insight into the vertical leakage mechanism of GaN-on-Si, carrier transport from n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> , n, p and p-Si(111) substrates through AlN nucleation layer was investigated. A plateau in current-voltage curve found only for AlN/p-Si heterojunction due to depletion p-Si substrate. Detailed study illustrated that it leaky cannot effectively block increasing amount electrons inversion at...
In this letter, the dynamic R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> degradation mechanisms of p-GaN gate HEMTs induced by off-state stress are investigated with different passivation dielectrics AlON and SiN. The twofold, including V xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> shift surface trapping in gate-to-drain access region, whose impacts successfully distinguished. Surface SiN is evidently proved to be dominant...
The ≥ 650 V power electronics market penetration by GaN HEMTs on Si has been impeded the buffer. Recently, GaN-on-sapphire, a promising solution, attracts great attentions. In this work, p-GaN gate are successfully manufactured 6-inch sapphire CMOS-compatible process in our pilot line. Device modules of selective etching, low-temperature Ohmic contact, and Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O...
In this letter, we demonstrate a high-performance lateral AlGaN/GaN Schottky barrier diode (SBD) using an 80-nm thick GaN cap layer as the passivation and low work-function tungsten (W) anode. A turn-on voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{ON}$ </tex-math></inline-formula> ) of 0.38 V high breakdown 2.08 kV are obtained at same time. Additionally, normalized dynamic on-resistance...
This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate. The two-dimensional electron gas (2DEG) in the quantum well of polarized AlGaN/GaN heterojunction was efficiently depleted by p-GaN gate, leading to high photo-to-dark current ratio (PDCR) 3.2 × 105. wells p-GaN/AlGaN and heterojunctions can trap holes electrons excited UV illumination, thus triggering photovoltaic effect photoconductive...
The two crucial factors of large scale and high voltage can hardly be balanced for the traditional GaN HEMTs on Si substrates. Recently, one promising solution, GaN-on-sapphire, has attracted great attention. However, commercialized GaN-on-sapphire wafers ever reported are usually 6 in. It is urgent to develop 8-in reduce cost meet market demands. In this work, best our knowledge, an wafer demonstrated first time. sheet resistance <inline-formula...
The variation of the energy interval between intercombination line ( 1s2p(P-3(1))-> 1s(2)) and resonance 1s2p(P-1(1))-> He-like aluminium with plasma density temperature is investigated. Since such equivalent to exchange state 1s2p(P-3(1)), we consider dependence this shift on environment. It was found that shifts increase decrease) electron temperature), become more sensitive as decreases, i. e. in strongly coupled regime. An approximately linear relation density. results show dense effects...
We demonstrate high performance undoped Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.92</sub> Sn xmlns:xlink="http://www.w3.org/1999/xlink">0.08</sub> quantum well (QW) pMOSFETs with in situ Si xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> H xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> passivation on (001), (011) and (111) orientations. (111)-oriented QW pFETs achieve higher on-state current ION effective hole mobility μ...
GaN power ICs on engineered substrates of Qromis substrate technology (QST) are promising for future applications, thanks to the reduced parasitics, thermally matched poly-AlN, high thermal conductivity, and mechanical yield in combination with thick buffer layers. In this article, we will elaborate detail epitaxy, integration, trench isolation. Electrical characterizations show that bears a breakdown voltage > 650 V under leakage criterion 10 μA/mm <sup...