A5100691332- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- Silicon Carbide Semiconductor Technologies
- Multilevel Inverters and Converters
- Advanced DC-DC Converters
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Electromagnetic Compatibility and Noise Suppression
- HVDC Systems and Fault Protection
- Electrostatic Discharge in Electronics
- Crystallography and molecular interactions
- Microgrid Control and Optimization
- Smart Grid and Power Systems
- Power Systems and Renewable Energy
- Power Systems and Technologies
- Semiconductor materials and interfaces
- Radiation Effects in Electronics
- GaN-based semiconductor devices and materials
- Food composition and properties
- Silicon and Solar Cell Technologies
- Advanced Sensor and Control Systems
- Vehicle Dynamics and Control Systems
- Electromagnetic Launch and Propulsion Technology
- Industrial Technology and Control Systems
- Advanced Battery Technologies Research
Hunan University
2016-2025
Huawei Technologies (China)
2024
Peking University
2024
Semiconductor Manufacturing International (China)
2024
Weifang Medical University
2023-2024
Beihang University
2024
Northwestern Polytechnical University
2018-2024
Second Affiliated Hospital of Zhejiang University
2024
Shuguang Hospital
2023
Shanghai University of Traditional Chinese Medicine
2023
There has been an increasing interest in using model predictive control (MPC) for power electronic applications. However, the exponential increase computational complexity and demand of computing resources hinders practical adoption this highly promising technique. In article, a new MPC approach artificial neural network (termed ANN-MPC) is proposed to overcome these barriers. A converter with virtual controller first designed operated under circuit simulation or hardware-in-the-loop...
The need for power semiconductor devices with high-voltage, high- frequency, and high-temperature operation capability is growing, especially advanced conversion military applications, hence the size weight of electronic system are reduced. Development 15-kV SiC IGBTs their impact on utility applications discussed.
SiC MOSFETs (silicon carbide metal-oxide semiconductor field-effect transistors) are replacing Si insulated gate bipolar transistors in many power conversion applications due to their superior performance. However, ruggedness and reliability of still big concern for widespread the market, especially safety-critical applications. The objective this study is provide a comprehensive picture on commercial MOSFETs, discover failure or degradation mechanism, propose some possible mitigation...
Traditional droop control strategy has lack of the decoupling ability, so efficiency and stability microgrid based on traditional are easily affected by uncontrollable coupling distributed generation (DG) units. In this paper, an improved incorporating compensation virtual impedance is proposed to improve microgrid. Its comprises angular frequency deviation voltage compensation, which decreases influence coupling. The can change characteristics line DG units reduce their Therefore,...
The online junction temperature monitoring of power devices is a viable technique to ensure the reliable operation mission-critical electronic converters. This article provides potential approach for estimation SiC MOSFETs based on dynamic threshold voltage. proposed method independent load current variation, which eliminates complicated calibration procedure with current. First, physical mechanism and dependence voltage are analyzed. An analytical model built investigate effects gate loop...
Large areas of centimeters-long SiC nanowires have been prepared by pyrolysis a polymer precursor with ferrocene as the catalyst CVD route. The nanowires, lengths several centimeters and diameters 100−200 nm, were composed single-crystal β-SiC along ⟨111⟩ direction grown on ceramic substrates in 11 cm × 4 cm. At high temperature, silane fragments derived from decomposition precursor, liquid polysilacarbosilane (l-PS), provided both Si C sources for growth nanowires. grew base-growth mode,...
Eliminating antiparallel silicon carbide Schottky barrier diode (SiC SBD) and making use of the intrinsic body SiC metal–oxide–semiconductor-field-effect transistor MOSFET) offer a cost-effectiveness solution without obviously sacrificing conversion efficiency in some power converter applications. Although commercial MOSFET has been qualified by several manufacturers, reliability under repetitive surge current stress not sufficiently studied. In this article, new degradation phenomena...
In this article, we proposed a comprehensive model for predicting the degradation of SiC MOSFETs after gamma-ray irradiation. It is experimentally founded that exhibit different behaviors under gate bias (i.e., <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {GS}} =15$ </tex-math></inline-formula> V and {DS}} $ = 0 V) drain =400$ in terms threshold voltage ( {TH}}$ ) ON-resistance...
10-kV silicon carbide (SiC) MOSFETs are currently being developed by a number of organizations in the U.S. with prospective applications high-voltage and high-frequency power-electronic systems. The aim this paper is to demonstrate high-temperature capability SiC application dc/dc boost converter. In study, MOSFET junction barrier Schottky (JBS) diode were characterized modeled SPICE. Following this, converter based on 10-A 5-A JBS was designed tested under continuous operation for...
A 6.5 kV 25 dual IGBT module is customized and packaged specially for high voltage low current application like solid state transformer its characteristics losses have been tested under the operation compared with 10 SiC MOSFET. Based on test results, switching different frequencies in a 20 kVA Solid-State Transformer (SST) has calculated both devices. The result shows MOSFET 7-10 times higher frequency capability than Si SST application.
The hybrid switch (HyS) of a higher-current main Si IGBT and parallel lower-current auxiliary Silicon Carbide (SiC) mosfet offer an improved cost/performance tradeoff for practical power electronic designs. purpose this paper is to investigate the short-circuit (SC) ruggedness, failure mechanisms, techniques improvement Silicon/SiC HyS. influence major limiting factors, including dc bus voltage, gate drive control pattern, case temperature, SiC sizing are experimentally studied. Two SC...
The optimal gate delay time control between the two internal devices to achieve excellent electrical and thermal performance of Si/SiC hybrid switch is considerably affected by several factors requires careful adjustment suit different operation conditions power converters. However, conventional solution for applies a fixed minimum switching loss at specific load current, resulting in disparities junction temperature over wide range. This effectively reduces safe operating area risking one...
Si/SiC hybrid switches of parallel Si insulated-gate bipolar transistor (IGBT) and SiC metal-oxide-semiconductor field-effect (mosfet) offer most the benefits but at a much lower cost in comparison to full solution. The switch can be optimized achieve minimum total power loss while utilizing smallest chip size without exceeding specified maximum junction temperature. In this article, we first develop generalized model for with temperature as outputs device continuous input variable, then...
Enabled by high voltage fast switching SiC devices, solid state transformers (SST) are being considered as a feasible application and major step forward compared with conventional power transformers. One of the key components for SST is frequency DC/DC converter. To reduce size weight this converter, operation desired hence it requires devices like MOSFETs. Due to used, there still significant amount losses in MOSFETs PIN diodes. In paper, five-level converter proposed based on concept...
High-voltage p-channel 4H-SiC insulated gate bipolar transistors (IGBTs) have been fabricated and characterized. The devices a forward voltage drop of 7.2 V at 100 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> -16 bias 25degC, corresponding to specific on-resistance 72 mOmega ldr cm differential 26 mmOmega . Hole mobility 12 /V s in the inversion channel with threshold -6 was achieved by optimizing n...
Four zinc coordination polymers with different architectures based on 5-(1<italic>H</italic>-benzoimidazol-2-ylsulfanylmethyl)-isophthalic acid have been prepared. Their photoluminescence and photocatalytic properties were also investigated.
Various Si/SiC hybrid device concepts aim at achieving SiC performance a significantly reduced cost in comparison to full solutions. Both the insulated-gate bipolar transistor (IGBT)(Si)/Schottky(SiC) pair and IGBT(Si)/MOSFET(SiC) switch offer substantial reduction switching losses but operate quite differently. This article compares of these two voltage source inverter (VSI). The basic operation principle, conduction, characteristics configurations are directly compared, an improved power...
In this article, two continuous control set model predictive (CCS-MPC) methods with one-step prediction horizon for three-level flying capacitor boost converter (FCBC) that can provide constant switching frequency are presented. The first one is explicit (EMPC), which solution. order to further reduce the complexity and computational burden of EMPC while meeting requirements, a simple (SMPC) proposed as second CCS-MPC method. will be used inner-loop controller inductor current (FC) voltage....
Wide-bandgap (WBG) power semiconductors offer a higher switching frequency and lower loss than their silicon counterparts but suffer from significantly component cost. In this article, we propose new WBG Si hybrid half-bridge (HHB) processing approach, which combines the high-frequency performance of low cost toward optimal tradeoff among efficiency, quality, The HHB approach uses low-frequency base-power half bridge in typical converter to achieve full-power conversion at fractional-power...
It is highly desirable to monolithically integrate a high-performance freewheeling diode (FWD) in both Si and SiC power MOSFETs for electronic applications. This especially true MOSFET since its inherent body has very large turn-on knee voltage (~2.7 V). The purpose of this numerical study investigate new 1200 V structure with an integrated heterojunction formed between n-type polysilicon (termed HJD-MOSFET). proposed HJD-MOSFET uses mesa accommodate the FWD without sacrificing any active...