The hybrid switch concept of paralleling a higher-current main Si IGBT and lower-current auxiliary SiC mosfet offers an improved cost/performance tradeoff in power converters. Currently, the gate control strategy these two internal devices emphasizes on minimizing total loss, is referred to as efficiency mode this paper. However, there serious risk overheating reliability degradation if solely relying strategy. In paper, we propose new method optimization, thermal balance mode, keep junction...

Eliminating antiparallel silicon carbide Schottky barrier diode (SiC SBD) and making use of the intrinsic body SiC metal–oxide–semiconductor-field-effect transistor MOSFET) offer a cost-effectiveness solution without obviously sacrificing conversion efficiency in some power converter applications. Although commercial MOSFET has been qualified by several manufacturers, reliability under repetitive surge current stress not sufficiently studied. In this article, new degradation phenomena...

The hybrid switch (HyS) of a higher-current main Si IGBT and parallel lower-current auxiliary Silicon Carbide (SiC) mosfet offer an improved cost/performance tradeoff for practical power electronic designs. purpose this paper is to investigate the short-circuit (SC) ruggedness, failure mechanisms, techniques improvement Silicon/SiC HyS. influence major limiting factors, including dc bus voltage, gate drive control pattern, case temperature, SiC sizing are experimentally studied. Two SC...

The optimal gate delay time control between the two internal devices to achieve excellent electrical and thermal performance of Si/SiC hybrid switch is considerably affected by several factors requires careful adjustment suit different operation conditions power converters. However, conventional solution for applies a fixed minimum switching loss at specific load current, resulting in disparities junction temperature over wide range. This effectively reduces safe operating area risking one...

Si/SiC hybrid switches of parallel Si insulated-gate bipolar transistor (IGBT) and SiC metal-oxide-semiconductor field-effect (mosfet) offer most the benefits but at a much lower cost in comparison to full solution. The switch can be optimized achieve minimum total power loss while utilizing smallest chip size without exceeding specified maximum junction temperature. In this article, we first develop generalized model for with temperature as outputs device continuous input variable, then...

Various Si/SiC hybrid device concepts aim at achieving SiC performance a significantly reduced cost in comparison to full solutions. Both the insulated-gate bipolar transistor (IGBT)(Si)/Schottky(SiC) pair and IGBT(Si)/MOSFET(SiC) switch offer substantial reduction switching losses but operate quite differently. This article compares of these two voltage source inverter (VSI). The basic operation principle, conduction, characteristics configurations are directly compared, an improved power...

Wide-bandgap (WBG) power semiconductors offer a higher switching frequency and lower loss than their silicon counterparts but suffer from significantly component cost. In this article, we propose new WBG Si hybrid half-bridge (HHB) processing approach, which combines the high-frequency performance of low cost toward optimal tradeoff among efficiency, quality, The HHB approach uses low-frequency base-power half bridge in typical converter to achieve full-power conversion at fractional-power...

The reliability concern of SiC MOSFETs has been extensively investigated with various accelerated stress tests. However, these conventional tests are predominantly performed in a simplified and controlled testing environment, which might or not realistically simulate the actual device operation profiles power converters. In this article, we report long-term degradation phenomenon several types an 2-kW factor correction (PFC) converter provide analysis mechanisms. Compared to dc cycling...

Reliability remains an issue for the Si/SiC hybrid switch adopting conventional switching strategy of internal SiC MOSFET that turns on earlier, and off later. Such is attributable to overcurrent stress under heavy load operating condition, which adversely affects during gate delay time. To solve this problem without increasing extra power loss, a novel variable-frequency current-dependent combining variable pattern strategy, pulsewidth modulation (PWM) frequency proposed. Variable can avoid...

The hybrid switch consisting of a high power Si IGBT and low SiC MOSFET has been reported to achieve reduction losses recently. In this paper, novel integrated gate driver is proposed for the Si/SiC its optimized performance cost-effectiveness. A DC/DC boost converter based on built tested demonstrate effectiveness superior switch. Experimental results show that with optimal control strategy can excellent thermal greatly improve handling capability or switching frequency compared solution.

Varying gate delay time of the Si insulated-gate bipolar transistor/SiC MOSFET hybrid switch is key to achieving high efficiency Si/SiC-hybrid-switch-based power converters because time-varying characteristics its junction temperature and operation current. Based on swarm intelligent algorithm, a novel adaptive delay-time control method Si/SiC in an inverter proposed achieve higher than traditional fixed time. In addition, by evaluating fitness values, can easily this goal without...

This article presents a method for computer-aided operation and design optimization of resonant converters using time-domain analysis. Resonant can operate in different stage trajectories (OSTs) with the change two degrees freedom (2DOFs), namely, switching frequency <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$f_{\mathrm {s}}$ </tex-math></inline-formula> duty ratio notation="LaTeX">$d$ . calculates...

The superior performance of the SiC MOSFETs operating in synchronous mode converter without external antiparallel Schottky diodes have been demonstrated recently. However, there are few studies surge current capability MOSFET's body diode, leading severe concern for its ruggedness practical power applications. purpose this paper is to experimentally compare non-repetitive intrinsic diode and analyze physical mechanisms their degradation after stress. Their electrical characteristics before...

The optimization of dual active bridge converters (DAB) is widely studied and numerous modulation schemes are proposed to enhance the performance a DAB converter. However, unified description method both suitable for time frequency domain analysis still lacks. Besides, process encounters difficulty potential nonconvex feasible region restricted by power transmission equality, making regular convex methods no longer applicable. To solve these problems, this article gave based on standard...

SiC Schottky barrier diode and MOSFET's body are two solutions for current freewheeling in the reverse direction. Recently, monolithic integrated MOSFET (SiC JMOS) has been developed to achieve a higher utilization rate of chip area. However, reliability under surge stress is critical requirement that be taken into account power applications. In this paper, comparative capability evaluation between JMOS, DMOS, was presented. The experiment results show JMOS weaker than DMOS but better SBD...

The voltage source inverter (VSI) based on the Si/SiC hybrid switch (HyS) offers a better cost/performance tradeoff than full-SiC VSI design. However, bears huge power losses with fixed gate turn-off delay time. In this article, novel dynamic optimal time control method of HyS-based is proposed to achieve maximum efficiency over wide load range. obtained by current-based mathematic loss model. A 20-kHz 5-kW prototype single-phase constant current (CC) using 1200-V/25-A insulated bipolar...

A high input voltage converter with a wide range is crucially required in long-distance submarine power system. However, the concise implementation of and ranges remains challenge for existing converter. In this article, serial hybrid-clamped three-level half-bridge <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LLC</i> resonant proposed. The proposed can withstand by connecting two half-bridges series. All operating states are analyzed,...

Silicon carbide (SiC) MOSFET reliability becomes crucial to their widespread applications. Many works have been conducted on SiC analyze the degradation of bond-wires, solder layer and semiconductor die under cycling tests. However, aging effects thermal stress above vulnerable areas which are essential for comprehensive understanding remain unclear. In this paper, discrete MOSFETs with kelvin-source were thermally aged different conditions in power The variation resistance bond-wire...

Cascaded boost-buck PFC (CBBPFC) converters offer a wide voltage conversion ratio and near-unity power factor but require large output electrolytic capacitor, leading to poor reliability density. In this paper, coordinated two-stage operation control strategy is proposed significantly minimize the capacitor requirement without any other hardware changes. conventional CBBPFC converter, boost buck stages either operate independently nor complementally. contrast, method operates two in...

A novel gate driver with simple functional and structural integration is proposed here, which splits the input signal outputs two separate signals a dedicated delay time to drive constitutional switches, aiming at cost-effectiveness power loss reduction of Si/SiC hybrid switch. The dependency switch's thermal efficiency performance on parameters are theoretically experimentally investigated in 9 kW 20 kHz switch based boost converter. load current dependent control strategy be implemented...

To meet the requirements of specifications, intelligent optimization steel bar blanking can improve resource utilization and promote development sustainable construction. As one most important building materials in construction engineering, reinforcing bars (rebar) account for more than 30% cost civil engineering. A significant amount cutting waste is generated during phase. Excessive increases costs generates a considerable COCO2 emission. This study aimed to develop an algorithm that be...