The online junction temperature monitoring of power devices is a viable technique to ensure the reliable operation mission-critical electronic converters. This article provides potential approach for estimation SiC MOSFETs based on dynamic threshold voltage. proposed method independent load current variation, which eliminates complicated calibration procedure with current. First, physical mechanism and dependence voltage are analyzed. An analytical model built investigate effects gate loop...

In this article, we proposed a comprehensive model for predicting the degradation of SiC MOSFETs after gamma-ray irradiation. It is experimentally founded that exhibit different behaviors under gate bias (i.e., <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {GS}} =15$ </tex-math></inline-formula> V and {DS}} $ = 0 V) drain =400$ in terms threshold voltage ( {TH}}$ ) ON-resistance...

The body diode degradation in SiC power MOSFETs has been demonstrated to be caused by basal plane dislocation (BPD)-induced stacking faults (SFs) the drift region. To enhance reliability of diode, many process and structural improvements have proposed eliminate BPDs region, ensuring that commercial wafers for 1.2 kV devices are high quality. Thus, investigating planar trench made from with similar quality attracted attention industry. In this work, current stress is applied on diodes under...

This paper evaluates the impact of fast high gate-voltage screening technique on gate oxide reliability commercial 1.2 kV 4H-SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) with planar and trench structures. The measurements are conducted packaged devices intent that results will be applicable to wafer-level screening. threshold voltage (Vth) SiC MOSFETs is measured before after various treatments recovery process. In addition, constant-voltage time-dependent...

This work introduces a novel temperature-triggered threshold voltage shift (T3VS) method to study the energy-dependent Dit distribution close conduction band edge in commercial 1.2 kV 4H-SiC MOSFETs with planar and trench gate structures. Traditional extraction methodologies are complicated require sophisticated instrumentation, complex analysis, and/or prior information related device design fabrication, which is generally unavailable consumers of devices. methodology merely utilizes...

This paper presents a method to recover the negative threshold voltage shift during high field gate oxide screening of 1.2 kV 4H-SiC MOSFETs with an additional adjustment pulse. To reduce failure rates in operation, manufacturers perform treatment remove devices extrinsic defects oxide. Current procedures are limited fields at or below ~9 MV/cm for short durations (&lt;1 s), which is not enough all defects. The results show that by implementing lower pulse, can be partially recovered, and...

It is highly desirable to monolithically integrate a high-performance freewheeling diode (FWD) in both Si and SiC power MOSFETs for electronic applications. This especially true MOSFET since its inherent body has very large turn-on knee voltage (~2.7 V). The purpose of this numerical study investigate new 1200 V structure with an integrated heterojunction formed between n-type polysilicon (termed HJD-MOSFET). proposed HJD-MOSFET uses mesa accommodate the FWD without sacrificing any active...

The failure mechanism of thermal gate oxide in silicon carbide (SiC) power metal semiconductor field effect transistors (MOSFETs), whether it is field-driven breakdown or charge-driven breakdown, has always been a controversial topic. Previous studies have demonstrated that the time thermally grown dioxide (SiO2) on SiC stressed with constant voltage indicated as charge driven rather than through observation Weibull Slope β. Considering importance accurate for lifetime prediction model...

This work investigates the behavior of threshold voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathbf{V}_{\mathbf{th}})$</tex> , subthreshold swing (SS), and interface state density xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathbf{D}_{\mathbf{it}})$</tex> commercial SiC planar MOSFETs during gate oxide burn-in process. The results indicate that prolonged electric field...

This work investigates the gate oxide reliability of commercial 1.2 kV silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) with planar and trench structures. The performance threshold voltage (Vth) leakage current (Igss) in SiC MOSFETs is evaluated under positive negative stress. lifetimes at 150 °C are measured using constant Time-Dependent Dielectric Breakdown (TDDB) testing. From test results, it found that electron trapping hole SiO2 caused by electric...

The reliability concern of SiC MOSFETs has been extensively investigated with various accelerated stress tests. However, these conventional tests are predominantly performed in a simplified and controlled testing environment, which might or not realistically simulate the actual device operation profiles power converters. In this article, we report long-term degradation phenomenon several types an 2-kW factor correction (PFC) converter provide analysis mechanisms. Compared to dc cycling...

Online monitoring of power device junction temperature is a viable technique to ensure reliable operation mission critical electronic converters. This paper presents comprehensive study major sensitive electrical parameters (TSEPs) SiC MOSFETs and compares them those Si IGBTs. These static dynamic include on-state resistance R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> , threshold voltage V...

Monolithic integration of junction barrier-controlled Schottky (JBS) diode with SiC MOSFET (termed JMOS) offers unique advantages. However, the short-circuit (SC) ruggedness issue stands in way development conventional JMOS. The purpose this numerical study is to investigate a new 4H-SiC JMOS self-pinching (SP) structure formed JFET region SP-JMOS). SP features that an N-type current spread layer sandwiched between P+ and buried P-shield layer, forming lateral channel. In forward conduction...

Junction temperature is a critical parameter for indicating the health condition of power devices in converters. Temperature sensitive electrical parameters (TSEPs) provide viable method extracting junction real-time operation. However, few studies focus on practical implementations methods SiC devices. This paper proposed novel monitoring circuit MOSFET based its quasi-threshold voltage (quasi-V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

Planar split-gate MOSFETs (SG-MOSFETs) are promising in high-frequency power applications due to the fast turn on/off speeds and low switching loss. However, SG-MOSFETs suffer from crowded electric field at edge of split poly-Si gate, resulting degradation blocking voltage gate oxide reliability. This issue becomes more critical 4H-SiC high breakdown field. In this work, a new 1.2-kV SG-MOSFET structure is proposed investigated by TCAD simulation. The features source metal plate located...

SiC Schottky barrier diode and MOSFET's body are two solutions for current freewheeling in the reverse direction. Recently, monolithic integrated MOSFET (SiC JMOS) has been developed to achieve a higher utilization rate of chip area. However, reliability under surge stress is critical requirement that be taken into account power applications. In this paper, comparative capability evaluation between JMOS, DMOS, was presented. The experiment results show JMOS weaker than DMOS but better SBD...

This paper proposes an effective screening technique based on a correlation between initial gate leakage current and oxide failure time at constant voltage for commercial 1.2 kV SiC planar power MOSFETs. During constant-voltage time-dependent dielectric breakdown (TDDB) tests MOSFETs, it is observed that devices exhibiting higher the same stress are more susceptible to breakdown. observation provides new perspective technique, which apply high short duration (100 ms) 150°C in order find...

Silicon carbide (SiC) MOSFET reliability becomes crucial to their widespread applications. Many works have been conducted on SiC analyze the degradation of bond-wires, solder layer and semiconductor die under cycling tests. However, aging effects thermal stress above vulnerable areas which are essential for comprehensive understanding remain unclear. In this paper, discrete MOSFETs with kelvin-source were thermally aged different conditions in power The variation resistance bond-wire...

Cascaded boost-buck PFC (CBBPFC) converters offer a wide voltage conversion ratio and near-unity power factor but require large output electrolytic capacitor, leading to poor reliability density. In this paper, coordinated two-stage operation control strategy is proposed significantly minimize the capacitor requirement without any other hardware changes. conventional CBBPFC converter, boost buck stages either operate independently nor complementally. contrast, method operates two in...

The Internet of Things has emerged as a wonder-solution to numerous problems in our everyday lives, such smart homes and intelligent transportation. As an extension the IoTs, Vehicles (IoVs) also requires increasingly high security timeliness. This article proposes vehicle-assisted batch verification (VABV) system for IoV, which some vehicles called auxiliary authentication terminal (AAT) are selected assist roadside unit Basic Safety Message (BSM) verification. measure enhance timeliness...

The 1.2-kV-rated 4H-SiC planar split-gate (SG) MOSFET embedding source field plate incorporated between separated gates (termed SFP-SG-MOSFET) is proposed and demonstrated. utilization of the in conventional SG-MOSFET (Conv-SG-MOSFETs) serves to alleviate adverse effects electric crowding. It also maintains minimum reverse transfer capacitance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...