Since Cree, Inc.'s 2 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nd</sup> generation 4H-SiC MOSFETs were commercially released with a specific on-resistance (R <inf xmlns:xlink="http://www.w3.org/1999/xlink">ON, SP</inf> ) of 5 mΩ·cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> for 1200 V-rating in early 2013, we have further optimized the device design and fabrication processes as well greatly expanded voltage ratings from 900 V up to...

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> The phenomenon of recombination-induced stacking faults in high-voltage p-n diodes SiC has been previously shown to increase the forward voltage drop due reduction minority carrier lifetime. In this paper, it that, for first time, effect is equally important unipolar devices such as MOSFETs. If internal body diode allowed be biased during operation these devices, then SFs will reduce majority...

A compact circuit simulator model is used to describe the performance of a 2-kV, 5-A 4-H silicon carbide (SiC) power DiMOSFET and perform detailed comparison with widely 400-V, Si MOSFET. The model's channel current expressions are unique in that they include regions at corners square or hexagonal cells turn on lower gate voltages enhanced linear region transconductance due diffusion nonuniformly doped channel. It shown accurately describes static dynamic both SiC devices diffusion-enhanced...

Microgrids with distributed generation sources are critical for reduction of greenhouse gas emissions and imported energy. However, power converters circuit breakers built silicon (Si) switches too bulky inefficient to be used in the microgrid system. The development high-voltage devices based on carbide (SiC) will a component building fluctuating generation. In this paper, physics technology (>10 kV) 4H-SiC devices, namely MOSFETs insulated gate bipolar transistors discussed. A detailed...

The 15-kV silicon carbide (SiC) MOSFET and SiC IGBT are the two state-of-the-art high-voltage devices. These devices enable simple two-level converters for a medium-voltage (MV) voltage source converter (VSC) topology compared with complex three-level neutral point clamped other multilevel topologies, which, otherwise, is required to realize MV VSC This paper characterizes module at 10- 12-kV dc bus different configurations of device under test. also presents endurance test (continuous...

The first high voltage npn bipolar junction transistors (BJTs) in 4H-SiC have been demonstrated. BJTs were able to block 1800 V common emitter mode and showed a peak current gain of 20 an on-resistance 10.8 m/spl Omega//spl middot/cm/sup 2/ at room temperature (I/sub C/=2.7 A @ V/sub CE/=2 for 1 mm/spl times/1.4 mm active area), which outperforms all SiC power switching devices reported date. Temperature-stable was observed these devices. This is due the higher percent ionization deep level...

10-kV, 123-m/spl Omega//spl middot/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> power DMOSFETs in 4H-SiC are demonstrated. A 42% reduction R/sub on,sp/, compared to a previously reported value, was achieved by using an 8 × 10/sup 14/ cm/sup -3/ doped, 85-μm-thick drift epilayer. An effective channel mobility of 22 cm /Vs measured from test MOSFET. specific on-resistance 123 m/spl were with gate bias 18 V, which corresponds E/sub...

The 4H-SiC n-IGBT is a promising power semiconductor device for medium voltage conversion. Currently, Cree has successfully built 15 kV n-IGBTs. These IGBTs are pivotal the smart grid conversion systems and drives. need complex multi-level topologies or series connected devices can be eliminated, while achieving reduced loss, by using SiC IGBT. In this paper, characteristics of have been reported first time. turn-on turn-off transitions kV, 20 A IGBT experimentally evaluated up to 11 kV....

Silicon Carbide (SiC) devices and modules have been developed with high blocking voltages for Medium Voltage power electronics applications. do not exhibit higher voltage capability due to its relatively low band gap energy compared SiC counterparts. For the first time, 12kV IGBTs fabricated. These excellent switching static characteristics. A Three-level Neutral Point Clamped Source Converter (3L-NPC VSC) has simulated newly IGBTs. This 3L-NPC is used as a 7.2kV grid interface solid state...

In this paper, we report our recently developed large area 4H-SiC n-IGBTs that have a chip size of 1 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and an active conducting 0.37 . A blocking voltage 22.6 kV has been demonstrated with leakage current 9 μA at gate bias 0 V room-temperature. This is the highest breakdown single MOS-controlled semiconductor switch reported to date. To improve conductivity modulation lower conduction...

In this paper, we present reliability and stability data based on a large body of accumulated from high volume production SiC power MOSFETs. The MOSFETs (Gen2, C2M) showed excellent diode threshold voltage after 1000 hours accelerated stressing tests. Results next generation MOSFET development efforts are also presented. A significant reduction in specific on-resistance was demonstrated, wide range blocking voltages, 900 V to 15 kV, has been demonstrated.

SiC detectors with active volume dimensions sufficient to stop alpha particles have been manufactured and tested. A linear energy response excellent resolution obtained for various emitters in the 3.18-MeV 8.38-MeV range. Evaluation of contributing factors detector indicates that measured values full width at half maximum (FWHM) are limited by straggling as they pass through metallic contact layers comprise entrance window detector. Even this component included FWHM, comparable those...

The interfacial region between silicon carbide (SiC) and its native oxide contains a high density of traps, which is considered major problem leading to lower mobility that has hindered SiC metal semiconductor field effect transistors from reaching their theoretical expectations. We investigate the microstructure chemistry 4H-SiC∕SiO2 interface due variations in nitric annealing aluminum implantation using Z-contrast imaging electron energy loss spectroscopy. A transition layer with carbon...

Fast neutron response measurements are reported for radiation detectors based on large-volume SiC p-i-n diodes. Multiple reaction peaks observed 14-MeV reactions with the silicon and carbon nuclides in detector. A high degree of linearity is /sup 28/Si(n,/spl alpha//sub i/) set six energy levels product 25/Mg nucleus, pulse height defect differences between 12/C(n,/spl 0/)/sup 28/ Si(n,/spl responses discussed. Energy spectrometry applications fission fusion fields also

This paper discusses the recent progress in large area silicon carbide (SiC) DMOSFETs and junction barrier Schottky (JBS) diodes. 1.2 kV 10 SiC have been produced with die areas greater than 0.64 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . JBS diode dies also rated at exceeding 1.5 These results demonstrate that power devices provide a significant leap forward performance for industrial electronics applications. At kV, offer...

We present our latest developments in ultra high voltage 4H-SiC IGBTs. A P-IGBT, with a chip size of 6.7 mm × and an active area 0.16 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> exhibited record blocking 15 kV, while showing room temperature differential specific on-resistance 24 mΩ-cm gate bias -20 V. N-IGBT the same showed 12.5 demonstrated 5.3 20 Buffer layer design, which includes controlling doping concentration thickness...

SiC power devices offer performance advantages over competing Si-based devices, due to the wide bandgap and other key materials properties of 4H-SiC. For example, can more easily be used fabricate MOSFETs with very high voltage ratings (up 10 kV), lower switching losses. The reliability is excellent has continued improve continuing advancements in substrate quality, epitaxial growth capabilities, device processing. This enabled continually accelerating commercial adoption. paper reviews...

This paper presents the development of 1000 V, 30A bipolar junction transistor (BJT) with high dc current gain in 4H-SiC. BJT devices an active area 3/spl times/3 mm/sup 2/ showed a forward on-current 30 A, which corresponds to density 333 A/cm/sup 2/, at voltage drop 2 V. A common-emitter 40, along low specific on-resistance 6.0m/spl Omega//spl middot/cm/sup was observed room temperature. These results show significant improvement over state-of-the-art. High temperature current-voltage...

We present our latest developments in ultra high voltage 4H-SiC IGBTs. A 6.7 mm x N-IGBT with an active area of 0.16 cm2 showed a blocking 12.5 kV, and demonstrated room temperature differential specific on-resistance 5.3 mΩ-cm2 gate bias 20 V. P-IGBT exhibited record 15 while showing 24 mΩ-cm2. comparison between P- N- IGBTs is provided this paper.

This paper presents the static and dynamic performance of 15 kV SiC IGBTs with 2 um 5 field-stop buffer layer thicknesses respectively compares them MOSFET in term loss switching capability. Their energy for different gate resistors temperature have been reported compared. A kHz 10.5 kW 8 boost converter has built tested using these three devices respectively. The based highest efficiency 99.39% which is a high voltage device converter. PLECS models can be developed on characterization data...

We present our latest developments in ultra high voltage 4H-SiC IGBTs. A P-IGBT, with a chip size of 6.7 mm × and an active area 0.16 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> exhibited record blocking 15 kV, while showing room temperature differential specific on-resistance 24 mΩ-cm gate bias -20 V. N-IGBT the same showed 12.5 demonstrated 5.3 20 Buffer layer design, which includes controlling doping concentration thickness...

This study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect. The is homogeneous method investigating thermal mechanical characteristics structure. Firstly, theoretical formulation thermo-electric behavior with effect presented by energy balance equation, Watt's law. Secondly, we formulate governing equation behaviors defining displacement function RUC was verified 3D...

A CMOS technology in 6H-SiC utilizing an implanted p-well process is developed. The p-wells are fabricated by implanting boron ions into n-type epilayer. PMOS devices on epilayer while the NMOS using a thermally grown gate oxide. resulting have threshold voltage of 3.3 V -4.2 at room temperature. effective channel mobility around 20 cm/sup 2//Vs for and 7.5 devices. Several digital circuits, such as inverters, NAND's, NOR's, 11-stage ring oscillators these exhibited stable operation...