Silicon offers multiple advantages to power circuit designers, but at the same time suffers from limitations that are inherent silicon material properties, such as low bandgap energy, thermal conductivity, and switching frequency limitations. Wide semiconductors, carbide (SiC) gallium nitride (GaN), provide larger bandgaps, higher breakdown electric field, conductivity. Power semiconductor devices made with SiC GaN capable of blocking voltages, frequencies, junction temperatures than...

This paper presents a critical evaluation of the performance capabilities various wide bandgap semiconductors for high power and frequency unipolar electronic devices. Seven different figures merit have been analyzed. Theoretical calculations show that besides diamond SiC, compounds like AlN, GaN, InN, ZnO, intermetallics (Ga/sub x/In/sub 1-x/N, Al/sub x/Ga/sub (AlN)/sub x/(SiC)/sub 1-x/) offer several orders magnitude improvement in on-resistance potential successful operation at higher...

The present state of SiC power Schottky and PiN diodes are presented in this paper. design, fabrication, characterization a 130 A diode, 4.9 kV an 8.6 4H-SiC which considered to be significant milestones the development high diodes, described detail. Design guidelines practical issues for realization high-power also presented. Experimental results on edge termination techniques applied newly developed, extremely thick (e.g., 85 100 /spl mu/m) epitaxial layers show promising results....

We evaluate and compare the performance potential of GaAs wide extreme bandgap semiconductors (SiC, GaN, Ga2O3, diamond), relative to silicon, for power electronics applications. examine their device structures associated materials/process technologies selectively review recent experimental demonstrations high voltage devices IC these semiconductors. discuss technical obstacles that still need be addressed overcome before large-scale commercialization commences.

We report the demonstration of monolithically integrated light-emitting diodes (LEDs) and power metal-oxide-semiconductor channel high-electron-mobility transistors (HEMTs) in GaN. The structure comprised a direct epitaxial integration layers typical for GaN-based LED grown directly on top HEMT. were then fabricated into serially connected pair GaN metal-oxide-semiconductor-gated 0.3 μm-channel HEMT by exposing LED/HEMT selective area etching. resulting circuit shows full gate voltage...

Gallium nitride self-aligned MOSFETs were fabricated using low-pressure chemical vapor-deposited silicon dioxide as the gate dielectric and polysilicon material. Silicon was implanted into an unintentionally doped GaN layer to define source drain regions, with implant activation at 1100/spl deg/C for 5 min in nitrogen. The have a low leakage current of less than 50 pA circular devices W/L=800/128 /spl mu/m. Devices are normally off threshold voltage +2.7 V field-effect mobility 45 cm/sup...

The impact of interconnection parasitic inductance on MOSFET switching characteristics is modeled analytically and evaluated experimentally. Closed-form analytical equations are derived to evaluate due common source loop inductance. Assuming an identical total inductance, a with higher has energy loss but lower overshoot voltage than tradeoffs between signal oscillation included in design criteria for optimizing performance packaged power electronics. experimental results good agreement the modeling.

We report on the demonstration of enhancement-mode n-channel GaN high-voltage MOSFET realized both p and n-GaN epilayer sapphire substrates. These MOSFETs, with linear circular gate geometries, show good dc characteristics maximum field-effect mobility 167 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vmiddots, best reported to date

Recent progress in silicon carbide (SiC) material has made it feasible to build power devices of reasonable current density. This paper presents results including a comparison with state-of-the-art diodes. Switching losses for two diodes (a fast diode, 600 V, 50 A, 60 ns Trr), an ultrafast diode (600 23 and 4H-SiC A) are compared. The effect reverse recovery on the turn-on insulated gate bipolar transistor (IGBT) studied both at room temperature 150 /spl deg/C. At temperature, SiC allow...

The thin-film properties of refractory metal silicides are reviewed along with related VLSI process technology. Material considerations, including deposition techniques, film structure, electrical properties, covered. Single-level and composite gate structures implemented these described. Thin-film processing-plasma etching, thermal oxidation, ion-beam-enhanced silicide formation, dopant implantation-of materials is discussed from the perspective compatibility. Characteristics MOS devices...

We review the vertical and lateral SiC GaN power transistor types structures explored commercialized for advanced energy efficient systems. have quantitatively evaluated on-state performance of these devices in voltage rating range from 30-10kV. Based on projections technology development trends, we feel that this emerging class will become an important indispensable component technology.

Reactive ion etching of silicon with NF3 gas has been found to alter the surface such that Schottky barrier height is systematically changed energy. The energetic ions introduce a net positive charge which increases on p-Si and decreases it n-Si. modification be function energy as well plasma used.

We develop a new analytical model for the junction barrier Schottky (JBS) rectifier and apply it to high-voltage 4H-SiC JBS rectifiers. This uses novel method approximate electric field at contact, which is together with Fowler-Nordheim tunneling equation accurately calculate reverse leakage current of rectifier. The forward on-resistance consists several components, are dominated by spreading resistances in drift layer. Moreover, this has been verified comparing simulation experimental...

The systematic design process using numerical simulations of the novel gallium nitride (GaN) enhancement-mode vertical superjunction high electron mobility transistor (HEMT) with breakdown voltage (BV) in range 5-20 kV is presented. GaN pillar structure drift region HEMT first optimized a simpler diode structure, and optimum half-pillar charge dosage obtained to be 8×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> cm...

The fin-gate structure was fabricated onto AlGaN/GaN MOS channel-high electron mobility transistors (MOSC-HEMTs), and the fin sidewall contribution to channel characteristics investigated. In MOSC-HEMTs (Fin-MOSC-HEMTs) with 120-nm width, significant suppression of short effect is obtained, but threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ) becomes lower than that conventional MOSC-HEMTs. width dependence shows...

This paper presents the development of 1000 V, 30A bipolar junction transistor (BJT) with high dc current gain in 4H-SiC. BJT devices an active area 3/spl times/3 mm/sup 2/ showed a forward on-current 30 A, which corresponds to density 333 A/cm/sup 2/, at voltage drop 2 V. A common-emitter 40, along low specific on-resistance 6.0m/spl Omega//spl middot/cm/sup was observed room temperature. These results show significant improvement over state-of-the-art. High temperature current-voltage...

Conventional power delivery methods for microprocessors and high-performance ASICs have fundamental limitations in meeting the requirements of future IC technologies due to large interconnect parasitics. A new three-dimensional (3D) approach along with a cellular supply architecture is proposed as possible solution problems conventional 2D delivery. Different 3D integration or power-processor applications are reviewed, important design partitioning considerations discussed. fully monolithic,...

SiC power devices have been found experimentally to burn out from heavy ion strikes with linear energy transfers as low 2.0 MeV · cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /mg. In this paper, better understand the failure mechanisms, we study single-event burnout (SEB) phenomenon using a unified physics model between radiation transport and device response. High-fidelity data, generated general purpose Monte Carlo N-particle...

Both experiments and simulations have shown that single-event burnout (SEB), a catastrophic event, occurs at less than half of the rated blocking voltage in commercial 4H-SiC power devices under heavy-ion strike. The failure was to be due significant impact ionization near epi/substrate interface. Adding buffer layer between drift epi substrate layers reduces effect changes thermal location. In this article, SEB phenomenon MOSFET utilizing is investigated. Heavy-ion transport 3-D...