In this letter, we analyzed the gate capacitance characteristics in p-GaN gate/AlGaN/GaN heterostructures by using a two-junction capacitor model. First, have observed that C-V behavior depends on different processing conditions of gate. Second, model considering series connection Schottky metal/p-GaN junction and AlGaN barrier is proposed to explain behavior. Based model, has an influence total value under high bias due junction. Furthermore, Mg-concentration hole density can be extracted....

In this work, we demonstrate, for the first time, Al0.35GaN/GaN/Al0.25GaN double heterostructure field effect transistors on 200 mm Si(111) substrates. Thick crack-free Al0.25GaN buffer layers are achieved by optimizing Al0.75GaN/Al0.5GaN intermediate and AlN nucleation layers. The highest breakdown voltage reaches 1380 V a sample with total thickness of 4.6 µm. According to Van der Pauw Hall measurements, electron mobility is 1766 cm2 V-1 s-1 density 1.16×1013 cm-2, which results in very...

In this paper, a further leakage reduction of AlGaN/GaN Schottky barrier diodes with gated edge termination (GET-SBDs) has been achieved by optimizing the physical vapor deposited TiN as anode metal without severe degradation ON-state characteristics. The optimized GET-SBD multifinger power 10 mm width deliver ~4 A at 2 V and show median 1.3 μA 25 °C 3.8 150 measured reverse voltage -200 V. temperature-dependent Si, SiC, our GaN compared. breakdown (BV) GET-SBDs was evaluated variation...

In this work, fast sweeping characterization with an extremely short relaxation time was used to probe the V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> instability of p-GaN gate HEMTs. As ID-VG deceases from 5 ms μs, dramatically degenerates 3.13 1.76 V, meanwhile hysteresis deteriorates 22.6 mV 1.37 V. Positive bias temperature (PBTI) measurement by shows features a very shifting process but slower recovering process. D-mode HEMTs...

Organic optoelectronic materials (OOMs) are pivotal for advancing technologies such as organic photovoltaics and light-emitting diodes. Traditional methods discovering new OOMs inefficient limited by chemical space exploration. We introduce O2-GEN, a novel framework leveraging 3D pretraining backbone trained on diverse dataset of over ten million molecules, enabling comprehensive exploration space. O2-GEN excels in generating fused-ring systems conjugated fragment assemblies, achieving...

The emergence of deep learning (DL) has provided great opportunities for the high-throughput analysis atomic-resolution micrographs. However, DL models trained by image patches in fixed size generally lack efficiency and flexibility when processing micrographs containing diversified atomic configurations. Herein, inspired similarity between structures graphs, a few-shot framework based on an equivariant graph neural network (EGNN) to analyze library (e.g., vacancies, phases, grain...

Precision detection and weak signal amplification are vital for applications in quantum sensing, optics, acoustics, electronics, where narrow linewidths high sensitivity crucial. Traditional methods, relying on high-quality factor resonators or hybrid systems with external feedback, often struggle complexity, environmental sensitivity, integration challenges. Advances non-Hermitian physics parity-time (PT) symmetry, particularly exceptional points (EPs), offer unique opportunities by...

Bi2Se3 topological insulators (TIs) are grown on AlN(0001)/Si(111) substrates by molecular beam epitaxy. In a one-step growth at optimum temperature of 300 °C, bonds strongly with AlN without forming interfacial reaction layers. This produces high epitaxial quality single crystals perfect registry the substrate and abrupt interfaces, allowing thickness scaling down to three quintuple layers (QL) jeopardizing film quality. It is found angle-resolved photoelectron spectroscopy that,...

Background The evaluation of hip arthroplasty is a challenge in computed tomography (CT). virtual monochromatic spectral (VMS) images with metal artifact reduction software (MARs) CT can reduce the artifacts and improve image quality. Purpose To evaluate effects VMS MARs for patients unilateral arthroplasty. Material Methods Thirty-five underwent dual-energy CT. Four sets without four were obtained. Artifact index (AI), number, SD value assessed at periprosthetic region pelvic organs. scores...

In this letter, the dynamic R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> degradation mechanisms of p-GaN gate HEMTs induced by off-state stress are investigated with different passivation dielectrics AlON and SiN. The twofold, including V xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> shift surface trapping in gate-to-drain access region, whose impacts successfully distinguished. Surface SiN is evidently proved to be dominant...

High-speed normal-incidence p-i-n InGaAs photodetectors epitaxially grown on silicon substrates by metal-organic chemical vapor deposition has been demonstrated. The active layer lattice-matched to InP was successfully Si employing metamorphic growth of and GaAs buffers with a two-step technique, in addition cyclic thermal annealing strain-balancing stacks. Circular devices diameters ranging from 20 60 μm were fabricated. Dark current diminished 3-dB bandwidth increased reduction the device...

Abstract We present a first study of threshold voltage instabilities semi-vertical GaN-on-Si trench-MOSFETs, based on double pulsed, transient, and UV-assisted C – V analysis. Under positive gate stress, small negative th shifts (low stress) (high are observed, ascribed to trapping within the insulator at metal/insulator interface. Trapping effects eliminated through exposure UV light; wavelength-dependent analysis extracts de-trapping energy ≈2.95 eV. CV measurements describe distribution...

In this paper, a novel magnetization state (MS) control method is proposed by utilizing torque deviation to achieve the MS closed-loop for variable flux memory machine. Firstly, relationship between MSs and demand magnetizing current pulses built into look-up table, which also contains information on linkages dq-axis inductances under different MSs. Afterwards, model-based calculation adopted estimation, then, present target can be obtained utilized generate switch signal, will determine...

In this article, we propose a novel localization and channel estimation integration framework for cell-free massive multiple-input–multiple-output (MIMO) Internet of Things (IoT) systems, in which position information supports accurate can, turn, improve positioning accuracy. Under framework, two-phase fingerprint-based method consisting both initial phases coarse-location-based (CLB) pilot reassignment scheme. The coarse location is obtained the phase method, fingerprint used extracted...

The impact of polarization fields in multiple quantum well (MQW) structures is revealed by photoluminescence measurements and band diagram calculations. We observe a blue shift luminous energy 33 meV an increased light emission 19% for In x Ga 1- N/In y N MQWs with respect to N/GaN MQWs. Band calculations show lowering the increase wave function overlap 22% adding indium into barriers. therefore attribute observed improved electron hole due lower electric structures.

Abstract AlGaN/GaN/AlGaN double heterojunction high‐electron‐mobility transistors were grown on 200 mm Si (111) using metalorganic chemical vapor deposition. The Al composition of AlGaN barrier varied from 20 at% to 30 and thickness 10 nm nm. In some structures, a 1 AlN interlayer was inserted between GaN channel. as‐grown wafers proven be high material quality the layer well controlled target values. A buffer break down voltage over 700 V obtained for all wafers. Compared their counterparts...

Abstract V‐defects can be very detrimental to the functionality of GaN based light emitting diodes (LEDs) and high power transistors grown on 200 mm Si (111) substrates. This work focuses reducing these defects in GaN/AlGaN/AlN stacks a Veeco Turbodisc Maxbright MOCVD system. The origins material were studied by cross‐sectional transmission electron microscope (TEM) angle annular dark field scanning microscopy (HAADF‐STEM). It was found that associated with inversion domain boundary (IDB)...

Abstract We demonstrate the key module of comparators in GaN ICs, based on resistor-transistor logic (RTL) E-mode wafers this work. The fundamental inverters comparator consist a p-GaN gate HEMT and 2DEG resistor as load. function RTL is finally verified by undervoltage lockout (UVLO) circuit. compatibility circuit with current technology paves way for integrating ICs together power devices.

Abstract In this work, we have systematically investigated the technique of low‐temperature AlN interlayer in MOCVD growth double heterojunction high‐electron‐mobility transistors buffer stacks on 200 mm Si (111) substrates. We demonstrated that a continuous compressive stress can be maintained by insertion interlayers which compensated large tensile during cooling for thick buffer. This eventually led to low wafer bow and good surface quality enabled wafers with full device stack meeting...

Abstract One of the promising methods to obtain high optical output power from LEDs grown on Si is eliminate absorptive substrate. In this paper, we report how GaN‐based thin‐film silicon (111) substrates by MOCVD were successfully transferred a copper substrate room‐temperature electroplating and original was removed HNA solution. After fabrication, III‐nitride LED thin films showed no cracks or degradation. And light after removal increased ∼ 30% compared with conventional ones before...

Raman spectroscopy, photoluminescence (PL), and spectroscopic photo current-voltage measurements were performed to characterize point defects at surface/interface bulk in AlGaN/GaN high electron mobility transistors (HEMTs) wafer. spectroscopy displayed that two samples have similar crystalline quality stress. PL revealed possessed strong near band edge peak around 3.42 eV broad blue luminescence. No yellow luminescence was observed. The (I-V) with sub-bandgap illumination exhibited the...

The impact of polarization fields in multiple quantum well (MQW) structures is revealed by photoluminescence measurements and band diagram calculations. We observe a blue shift luminous energy 33 meV an increased light emission 19% for InxGa1-xN/InyGa1-yN MQWs with respect to InxGa1-xN/GaN MQWs. Band calculations show lowering the increase wave function overlap 22% adding indium into barriers. therefore attribute observed improved electron hole due lower electric structures.

Abstract In GaN‐on‐silicon there are many challenges which currently encountered when making this technology compatible with standard Si‐CMOS fabs especially the bow. Bringing to CMOS can potentially drive costs down, in addition cost advantage expected from large wafer sizes. We report here on impact of AlN nucleation layer crystal quality and The focus will be V/III ratios pre‐dose conditions for AlN, have considerable effect AlN/AlGaN/GaN buffer structures. also discuss how thickness used...