We report growth of one-dimensional semiconductor nanocrystals, nanowhiskers, in which segments the whisker with different composition are formed, illustrated by InAs whiskers containing InP. Our conditions for allow formation abrupt interfaces and heterostructure barriers thickness from a few monolayers to 100s nanometers, thus creating landscape along electrons move. The crystalline perfection, quality interfaces, variation lattice constant demonstrated high-resolution transmission...

During the last half century, a dramatic downscaling of electronics has taken place, miniaturization that industry expects to continue for at least decade. We present efforts use self-assembly one-dimensional semiconductor nanowires1 in order bring new, high-performance nanowire devices as an add-on mainstream Si technology. The approach offers coaxial gate-dielectric-channel geometry is ideal further and electrostatic control, well heterostructure-based on wafers.

We report on the growth of designed heterostructures placed within semiconductor nanowhiskers, exemplified by InAs/InP material system. Based transmission electron microscopy, we deduce interfaces between InAs and InP to be atomically sharp. Electrical measurements thermionic emission across an 80-nm-wide heterobarrier, positioned inside whiskers 40 nm in diameter, yield a barrier height 0.6 eV. On basis these results, propose new branches physics phenomena as well families device structures...

Semiconductor heterostructures and their implementation into electronic photonic devices have had tremendous impact on science technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructure are receiving a lot interest. We report here functional 1D resonant tunneling diodes obtained via bottom-up assembly designed segments different semiconductor materials in III/V nanowires. The emitter, collector, central dot made from InAs barrier material InP. Ideal...

Semiconductor-based single-electron transistors have been fabricated using heterostructure nanowire growth, by introducing a double barrier of InP into InAs nanowires. From electrical measurements, we observe charging energy 4 meV for the approximately 55 nm diameter and 100 long islands between barriers. The Coulomb blockade can be periodically lifted as function gate voltage all devices, which is typical signature single-island transistors. Homogeneous nanowires show no such effect...

We present growth studies of InAs nanowires nucleated from lithographically positioned Au seeds on (111)B substrates. The are grown in a chemical beam epitaxy system and exhibit high aspect ratios homogeneity length width. Investigations wire rate as function diameter, density, time were performed the results indicate that 80% is due to In species diffusing substrate surface. Furthermore, we have established diffusion {110} side surfaces exceeds 10 μm. also observe decreasing with increasing...

Vertical light emitting diodes (LEDs) based on GaAs/InGaP core/shell nanowires, epitaxially grown GaP and Si substrates, have been fabricated. The devices can be fabricated over large areas precisely positioned the by use of standard lithography techniques, enabling applications such as on-chip optical communication. LED functionality was established both kinds substrate, were evaluated in terms temperature-dependent photoluminescence electroluminescence.

We have developed a technique for the synthesis of size-selected, GaAs, epitaxial nano-whiskers, grown on crystalline substrate. As catalysts, we used size-selected gold aerosol particles, which enabled us to fully vary surface coverage independently whisker diameter. The whiskers were rod shaped, with uniform diameter between 10 and 50 nm, correlated size catalytic seed. Furthermore, by use nano-manipulation particles means atomic force microscopy, can nucleate individual nano-whiskers in...

We report on a method of synthesizing arrays individually seeded nanowires. An electron beam lithography and metal lift-off was used to pattern InP(111)B substrates with catalysing gold particles. Vertical nanowire were then grown from the particles, using metal–organic vapour phase epitaxy. The lithographic nature allows individual control over each nanowire. Possible applications for such deterministic uniform include producing devices, two-dimensional photonic band gap structures field...

We report on [001]InP nanowires grown by metalorganic vapor phase epitaxy directly (001)InP substrates. Characterization scanning electron microscopy and transmission reveals wires with nearly square cross sections a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements single [001] exhibit narrow intense emission peak at approximately 1.4eV, whereas ⟨111⟩B reference show additional broad luminescence peaks lower energy. The origin this...

In this paper, we report on the development of a vertical wrap-gated field-effect transistor based epitaxially grown InAs nanowires. We discuss some important steps involved in growth and processing, such as nanowire position control, situ doping, high- kappa dielectric deposition, spacer layer formation, metal wrap-gate fabrication. particular, compare few alternative methods for deposition materials onto structures their potential advantages limitations. Finally, also present comparison...

Abstract Aim Low anterior resection syndrome (LARS) is common after low resection. Our aim was to evaluate the prevalence and ‘bother’ (subjective, symptom‐associated distress) of major LARS 1 2 years, identify possible risk factors relate bowel function a reference population. Method The QoLiRECT (Quality Life in RECTal cancer) study Scandinavian prospective multicentre including 1248 patients with rectal cancer, whom 552 had an Patient questionnaires were distributed at diagnosis 1, 5...

Indium arsenide nanowires are grown directly on silicon substrates (see figure and cover) using a method employing self-assembled organic coatings to create oxide-based growth templates. High-performance materials, such as InAs, could have great impact future nanoelectronics if integrated with Si, but integration has so far been hard realize other methods.

In this work, we present a method to synthesize arrays of hexagonal InGaN submicrometer platelets with top c-plane area having an extension few hundred nanometers by selective metal–organic vapor-phase epitaxy. The were made in situ annealing pyramids, whereby from the pyramid apex was thermally etched away, leaving surface, while inclined {101̅1} planes pyramids intact. as-formed c-planes, which are rough islands tens nanometers, can be flattened regrowth, showing single bilayer steps and...

We present results on the effect of seed particle reconfiguration growth short InAs and InP nanowire segments. The originates in two different steady state alloy compositions Au/In during InP. From compositional analysis particle, In content is determined to be 34 44% growth, respectively. When switching between growing InP, transient effects dominate time period reconfiguration. developed a model that quantitatively explains with added understanding we are now able grow (<10 nm) superlattices.

Uniform arrays of submicron hexagonal InGaN pyramids with high morphological and material homogeneity, reaching an indium composition 20%, are presented in this work. The were grown by selective area metal-organic vapor phase epitaxy nucleated from small openings a SiN mask. growth selectivity was accurately controlled diffusion lengths the gallium species, more than 1 μm on surface. High homogeneity achieved inserting precisely formed GaN pyramidal seed prior to growth, leading well-shaped...

Urinary dysfunction is one of many complications after treatment for rectal cancer. The aim this study was to evaluate the prevalence patient-reported urinary at time diagnosis and 1-year follow-up assess risk factors linked incontinence.Patients with newly diagnosed cancer were included in QoLiRECT between 2012 2015. Questionnaires from analysed, 1085 916 patients, respectively, eligible analysis. Regression analyses made investigate possible incontinence. patient cohort also compared a...

Microbial inhibition by high ammonia concentrations is a recurring problem that significantly restricts methane formation from intermediate acids, i.e., propionate and acetate, during anaerobic digestion of protein-rich waste material. Studying the syntrophic communities perform acid conversion challenging, due to their relatively low abundance within microbial typically found in biogas processes disruption cooperative behavior pure cultures. To overcome these limitations, this study...

To investigate autonomic dysfunction (AD) development in patients with primary SS (pSS) and the associations between AD clinical, inflammatory serological features of pSS.Twenty-seven pSS, who had previously been evaluated for AD, were included study. The studied at baseline follow-up by objective reflex tests (ARTs) symptom profile (ASP) questionnaire, evaluating symptoms. median time was 5 years ART 4 ASP variables. results compared investigated healthy controls population-based controls....

Oxytocin is expressed throughout the gastrointestinal tract and released in response to a fatty meal. Administration of an oxytocin receptor antagonist prolongs gastric emptying rate. The aim this study was examine effect on accommodation, time, satiety after food intake.Ten healthy subjects participated slow drinking test with liquid Every 5 min scored their sensation using visual analogue scale (VAS) until maximum reached amount intake determined. Twelve test. They were given standardized...