A5072440990- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Semiconductor materials and devices
- ZnO doping and properties
- Semiconductor Quantum Structures and Devices
- Silicon Carbide Semiconductor Technologies
- Radio Frequency Integrated Circuit Design
- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- Thin-Film Transistor Technologies
- Nanowire Synthesis and Applications
- Advanced Photocatalysis Techniques
- Electronic and Structural Properties of Oxides
- Semiconductor materials and interfaces
- Advancements in Semiconductor Devices and Circuit Design
- Structural Load-Bearing Analysis
- Metal and Thin Film Mechanics
- Chemical Reactions and Mechanisms
- Anodic Oxide Films and Nanostructures
- Advanced Semiconductor Detectors and Materials
- RNA modifications and cancer
- Photocathodes and Microchannel Plates
- Advanced DC-DC Converters
- Advanced Memory and Neural Computing
- Reservoir Engineering and Simulation Methods
ShanghaiTech University
2019-2025
Zhejiang Chinese Medical University
2023-2025
Shanghai Institute of Microsystem and Information Technology
2022-2024
University of Chinese Academy of Sciences
2022-2024
Shanghai Jiao Tong University
2017-2022
Shanghai Fudan Microelectronics (China)
2022
Chinese Academy of Sciences
2022
Fudan University
2022
Intelligent Health (United Kingdom)
2022
Nanjing University of Aeronautics and Astronautics
2022
Using GaN-on-Si epilayers, for the first time, fully vertical p-i-n diodes are demonstrated after Si substrate removal, transfer, and n-electrode formation at top of device. After SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> sidewall passivation, diodes, with n-GaN facing up, exhibit VON 3.35 V 1 A/cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , a low differential ON-resistance 3.3 mΩcm 300 breakdown voltage 350 V....
An active matrix light emitting diode (LED) microdisplay system was demonstrated with GaN-on-Si epilayers and a custom-designed CMOS backplane using an Au-free Cu/Snbased metal bonding method. The blue micro-LED array consists of 64 × 36 pixels pitch size 40 μm pixel density 635 pixels/in (ppi). Si substrate for the LED growth removed by reactive ion etching (RIE) SF6based gas after flip-chip bonding. Crack-free smooth GaN layers in display area were exposed. Images videos 4-bit grayscale...
We report lateral integration of an InGaN/GaN light-emitting diode (LED) and AlGaN/GaN high electron mobility transistor (HEMT) via the epitaxial layers. Direct contact HEMT channel n-GaN electrode LED allows for conversion a current-controlled to voltage-controlled device by gate drain biases. The integrated HEMT-LED exhibited light output power 7 mW from with modulated injection current 80 mA through ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...
This letter reports a novel voltage-controlled light emitter with fast switching speed and dimming capability using monolithically integrated GaN HEMT-LED device. The device, transconductance of 113 mS/mm large emitting area ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$450\times 470\,\,\mu \text{m}^{2}$ </tex-math></inline-formula> ), exhibits 15 MHz. When functioning as an optical transmitter, data...
We report growth and fabrication of fully- quasi-vertical GaN-on-Si p-i-n diodes. A record high Baliga figure merit 304 152 MW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> is reported for fully-and diodes, respectively. comprehensive comparison has been made between the two kinds diodes in regard ON-resistance, breakdown voltage, switching performance. An ultralow differential ON-resistance 0.5 1.0 mQ · cm demonstrated quasi-...
Herein, vertical Schottky barrier diodes (SBDs) based on a bulk β‐Ga 2 O 3 substrate are developed. The devices feature an ion‐implanted planar edge termination (ET) structure, which can effectively smoothen the electric field peak and reduce crowding at junction edge. Greatly enhanced reverse blocking characteristics including ≈10 × lower leakage current 1.5× higher breakdown voltage ( V B ) achieved, whereas good forward conduction such as reasonably high on‐state density near‐unity...
This study investigates the broad-energy-spectrum reactor-neutron irradiation effects on electrical characteristics of Ni/β-Ga2O3 Schottky barrier diodes (SBDs), where irradiated neutron fluence was up to 1 × 1016 cm−2. On one hand, high cm−2 resulted in a reduction forward current density by two orders magnitude and an extremely on-resistance property due radiation-generated considerable series resistance SBD. other brought little influence contact, since extracted ideality factor height...
Normally-off recessed-gate AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors (MOSHEMTs) were fabricated using argon-based ion beam etching and thoroughly characterized. By partially recessing the AlGaN barrier, device achieved a threshold voltage of 4.22 V, saturation drain current 545 mA/mm, small on-resistance 3.63 Ω·mm at gate bias 8 V. The MOSHEMT demonstrated good breakdown characteristics that by scaling gate-to-drain distance ( <italic...
This letter reports the breakdown ruggedness of GaN-based quasi-vertical p-i-n diodes on Si for first time. With a 2μm-thick drift layer, 0.08-mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> devices can sustain surge current up to 0.73 A, and maximum sink in energy 3 mJ using an unclamped inductive switching test setup. No parametric nor device degradation was found after repetitive avalanche consisting multiple 50 000 events with...
We report on the reduction of off-state leakage current in AlGaN/GaN high electron mobility transistors (HEMTs) by a two-step process combining pre-gate surface treatment and post-gate annealing (PGA), which suppressed two paths, namely, lateral vertical tunneling leakage, separately. The current, was mainly induced high-density trap states generated during device isolation etching process, significantly reduced low power O2-plasma HCl process. PGA improving Schottky contact quality...
In this letter, monolithic integration of InGaN/GaN light emitting diodes (LEDs) with vertical metal-oxide-semiconductor field effect transistor (VMOSFET) drivers have been proposed and demonstrated. The VMOSFET was achieved by simply regrowing a p- n-GaN bilayer on top standard LED structure. After fabrication, the is connected through conductive layer, no need extra metal interconnections. junction-based inherently an enhancement-mode (E-mode) device threshold voltage 1.6 V. By controlling...
In this paper, InP based near infrared (NIR) /extended-short wave (eSWIR) dual-band photodetector with <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As and As/GaAs xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Sb type-II superlattice (T2SL) back-to-back <italic xmlns:xlink="http://www.w3.org/1999/xlink">n-i-p/p-i-n</i> structures is demonstrated. Monolithic growth of...
Silicon Carbide (SiC) demonstrates significant potential for high-energy particle detection in complex radiation environments due to its exceptional resistance, excellent environmental adaptability, and fast response time. Compared silicon (Si) detectors, SiC detectors exhibit distinct resistance characteristics depending on the type of exposure. Here, mechanism impact 80MeV proton irradiation electrical performance 4H-SiC PIN devices is reported.Deep Level Transient Spectroscopy (DLTS)...
LEDs on Si offer excellent potential of low cost manufacturing for solid state lighting and display, taking advantage the well-developed IC technologies silicon. In this paper, we report how performance grown can be improved. Multiple quantum well InGaN LED structure was patterned silicon substrates circular 160 µm in radius were processed. Fabricated then transferred to an electroplated copper substrate with a reflective mirror inserted by double-flip transfer process, improve light...
In this report, electrical characteristics of the Ni/GaN Schottky barrier diode grown on sapphire have been investigated in range 20 K–300 K, using current–voltage, capacitance–voltage, and deep level transient spectroscopy (DLTS). A unified forward current model, namely a modified thermionic emission diffusion has developed to explain characteristics, especially regime with large ideality factor. Three leakage mechanisms their applicability boundaries identified for various bias conditions...
Temperature-dependent dc and dynamic characteristics of p-GaN gate HEMT were thoroughly investigated from 300 to 140 K. At low temperature, in addition barely shifted threshold voltage, substantial improvement drain current was observed. K both positive negative bias stressing applied the device order form a complete mapping voltage instability HEMT. Three mechanisms, namely hole trap emission, carrier out-spilling, accumulation have been employed elucidate trends shift at room temperature....
The study of interface states and bulk traps their connection to device instability is highly demanded achieve reliable β-Ga2O3 metal-oxide-semiconductor (MOS) devices. However, a comprehensive analysis the capture/emission behavior can be challenging due widespread time constant distribution. In this study, using capacitance transient measurement tools, trap ZrO2/β-Ga2O3 MOS gate stack were explicitly investigated, particularly its bias- temperature-dependent relaxation kinetics. As forward...