Current optical communication systems operating at the 1.55 μm wavelength band may not be able to continually satisfy growing demand on data capacity within next few years. Opening a new spectral window around 2 μm with recently developed hollow-core photonic bandgap fiber and thulium-doped amplifier is promising solution increase transmission due low-loss wide-bandwidth properties of these components this band. However, as key component, performance current high-speed photodetectors still...

Silicon and PbS colloidal quantum dot heterojunction photodetectors combine the advantages of Si device CQDs, presenting a promising strategy for infrared light detecting. However, construction high-quality CQDs:Si remains challenge. In this work, we introduce an inverted structure photodetector based on n-type p-type CQDs. Compared with existing normal it has lower energy band offset that provides more efficient charge extraction device. With help wafer surface passivation doping density...

We report the demonstration of a normal-incidence p-i-n germanium-tin ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="m1"> <mml:mrow> <mml:msub> <mml:mi>Ge</mml:mi> </mml:mrow> <mml:mn>0.951</mml:mn> </mml:msub> <mml:mi>Sn</mml:mi> <mml:mn>0.049</mml:mn> </mml:math> ) photodetector on silicon-on-insulator substrate for 2 μm wavelength application. The DC and RF characteristics devices have been characterized. A dark current density under id="m2"> <mml:mo...

Abstract Ultra-compact spectrometers are becoming increasingly popular for their promising applications in biomedical analysis, environmental monitoring, and food safety. In this work, we report a single-pixel-photodetector spectrometer with spectral range from 480 nm to 820 nm, based on the AlGaAs/GaAs p-graded-n junction voltage-tunable optical response. To reconstruct spectrum, propose tailored method called Neural Spectral Fields (NSF) that leverages unique wavelength bias-dependent...

We present InP-based evanescently-coupled waveguide modified uni-traveling carrier photodiodes (MUTC-PDs) exhibiting a breakthrough in bandwidth. The optimization of transport and optical coupling is achieved through detailed discussion on the design cliff layer layer. Addressing parasitic capacitance challenge, we introduce benzocyclobutene (BCB) beneath PD electrodes, effectively overcoming bandwidth bottleneck associated with RC time constant. Devices sizes 2 × 7 <inline-formula...

The accelerating demand for wireless communication necessitates wideband, energy-efficient photonic sub-terahertz (sub-THz) sources to enable ultra-fast data transfer. However, as critical components THz mixing, photodiodes (PDs) face a fundamental trade-off between quantum efficiency and bandwidth, presenting major obstacle achieving high-speed performance with high optoelectronic conversion efficiency. Here, we overcome this challenge by demonstrating an InP-based, waveguide-integrated...

Hollow-core fiber (HCF) has been attracting broad interests in recent decades, and extended the communication window to longer wavelength, 2 micron. In this article, we present a demonstration of low-latency HCF short-reach optical interconnection at micron, achieving high single-lane speed 100 Gbps. High physical (near vacuum-light-speed) information (100-Gbps) with 100-m transmission distance is experimentally achieved error-free performance. Probabilistically shaped discrete multi-tone...

Avalanche photodiodes (APDs) on Si operating at optical communication wavelength band are crucial for the Si-based transceiver application. In this paper, we report first O-band InAs quantum dot (QD) waveguide APDs monolithically grown with a low dark current of 0.1 nA unit gain and responsivity 0.234 A/W 1.310 μm (−5 V). linear mode, have maximum 198 show clear eye diagram up to 8 Gbit/s. These QD-based enjoy benefit sharing same epitaxial layers processing flow as QD lasers, which could...

As a newly developed technique, focused microwave breast hyperthermia (FMBH) can provide accurate and cost-effective treatment of tumors with low side effect. A clinically feasible FMBH system requires guidance technique to monitor the power distribution in breast. Compressive thermoacoustic tomography (CTT) is suitable approach for FMBH, which more than MRI. However, no experimental validation based on realized FMBH-CTT has been reported, greatly hinders further advancement this novel...

This paper presents the performance characteristics of InP-based p-i-n photodiodes with strain-compensated and lattice-matched InGaAs/GaAsSb type-II multiple quantum well (MQW) absorption regions. The results show that regions have optical response out to 3.4 2.8 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\mu{\rm m}$</tex></formula> dark current densities 9.7 1.66 Notation="TeX">${\rm mA}~{\rm...

High speed photodetectors operating at a telecommunication band (from 1260 to 1625 nm) have been well studied with the development of an optical fiber communication system. Recent innovations photonic systems raised new requirements on bandwidth cutoff wavelengths from extended short wavelength infrared (eSWIR) long (LWIR). However, frequency response performance in these longer bands is less studied, and performances current high-speed are still not comparable those band. In this paper,...

High-speed photodetectors operating at mid-wave infrared are crucial for free-space optical communication and frequency comb spectroscopy. In this letter, we report a high-speed uni-traveling carrier photodiode based on InAs/InAsSb type-II superlattice room temperature the first time. The device exhibits cut-off wavelength of around 5.5 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$...

PbS colloidal quantum dots (CQDs) are emerging as promising candidates for next-generation, low-cost, and high-performance infrared photodetectors. Recently, photomultiplication has been explored to improve the detectivity of CQD photodetectors by doping charge-trapping material into a matrix. However, this relies on remote that could influence carrier transfer giving rise limited photomultiplication. Herein, charge-self-trapped ZnO layer is prepared surface reaction between acid ZnO....

The performance of semiconductor devices on silicon can be severely degraded by the presence dislocations incurred during heteroepitaxial growth. Here, physics defect mechanisms, characterization epitaxial structures, and device properties waveguide photodetectors (PDs) epitaxially grown (001) Si are presented. A special GaAs-on-V-grooved-Si template was prepared combining aspect ratio trapping effects, superlattice cyclic, strain-balancing layer stacks. high quality buffer structure...

In this paper, we have demonstrated the first InAs/InGaAs/GaAs quantum dots-in-a-well (DWELL) photodetector monolithically grown on silicon substrate. We studied both optical and electrical characteristics of DWELL photodetectors. Time-resolved photoluminescence spectra measured from revealed a long carrier lifetime 1.52 ns. A low dark current density 2.03 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> mA/cm...

In this paper, low frequency noise and dark current correlation is investigated as a function of reverse bias temperature for short-wave infrared (SWIR), mid-wave (MWIR), long-wave (LWIR) HgCdTe homo-junction photodetectors. Modelling current-voltage characteristics shows that the detectors have ohmic-behavior under small bias, thus enabling further analysis 1/f noise-current dependences with empirical square-law relation (SI ∼ I2) at different regions. It found SWIR MWIR devices, total...

Avalanche photodiodes (APDs) can amplify the weak optical signal as well enable higher receiver sensitivity due to internal avalanche gain, but impact ionization process also introduce "excess noise," which limits practically achievable signal-to-noise ratio (or sensitivity) and gain-bandwidth product. Hg <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{1} -{x}}$ </tex-math></inline-formula> CdxTe...

An InP-based p-i-n photodiode with optical response out to 3.4 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\mu\hbox{m}$</tex></formula> was designed and grown by molecular beam epitaxy (MBE). One hundred pairs of 7-nm Notation="TeX">$\hbox{In}_{0.34}\hbox{Ga}_{0.66}\hbox{As}$</tex> </formula> /5-nm Notation="TeX">$\hbox{GaAs}_{0.25}\hbox{Sb}_{0.75}$</tex> quantum wells strain compensated InP were...

We report on InP-based p-type/intrinsic/n-type (PIN) photodiodes with a novel strain-compensated type-II InGaAs/GaAsSb quantum well active region. The device has optical response out to 3.0 μm, specific detectivity (D*) of 7.73×10(9) cm Hz(0.5)/W at 290 K for 2.7 μm. These preliminary results show that this approach leads similar performance when compared conventional approach.

In this paper, InP based near infrared (NIR) /extended-short wave (eSWIR) dual-band photodetector with <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As and As/GaAs xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Sb type-II superlattice (T2SL) back-to-back <italic xmlns:xlink="http://www.w3.org/1999/xlink">n-i-p/p-i-n</i> structures is demonstrated. Monolithic growth of...

InGaAs photodiodes have a wide range of important applications; for example, NIR imaging, fiber optical communication, and spectroscopy. In this paper, we studied with different doping concentration absorber layers. The simulated results suggested that, by reducing the from 1 × 1016 to 1015 cm−3, maximum quantum efficiency devices can rise 1.2%, 58%. simulation also showed increasing layer within certain range, dark current device be slightly reduced. A PIN structure was grown fabricated, CV...

<title>Abstract</title> Mid-wavelength infrared (MWIR) avalanche photodiodes (APD) are extensively employed in rapid, high-precision detection as well thermal imaging complex context due to their superior sensitivity, fast response, and high gain. However, conventional MWIR APD’s typically requires lowtemperature operation relieve signal-to-noise limitations imposed by dark currents narrow bandgap materials. To address this challenge, we present the high-temperature-operating photodiode with...

Abstract This paper provides a comprehensive review of multi-stage infrared detectors, including interband cascade photodetectors (ICIPs) and quantum detectors (QCDs). These exhibit low dark current, high detectivity, 3dB bandwidth positioning them as promising candidates in (IR) detector technology. The covers the history corresponding device physics, materials systems, DC RF performance, recent advancements. Additionally, comparative analysis ICIPs QCDs is provided, along with discussions...