Gallium nitride high electron mobility transistor (GaN HEMT) has matured dramatically over the last few years. A progressively larger number of GaN devices have been manufactured for in field applications ranging from low power voltage regulators to infrastructure base-stations. Compared state-of-the-art silicon MOSFET, HEMT a much better figure merit and shows potential high-frequency applications. The first generation 600 V is intrinsically normally on device. To easily apply circuit...

This paper presents the development of a simulation model for high-voltage gallium nitride (GaN) high-electron-mobility transistors (HEMT) in cascode structure. A method is proposed to accurately extract device package parasitic inductance, which vital importance better predict high-frequency switching performance device. The verified by double-pulse tester, and results match well both terms waveform energy. Based on model, an investigation influence GaN HEMT presented, several critical...

This overview paper focuses on state-of-the-art technologies and trends toward the integration of point-of-load (POL) converters. encompasses an extended survey literature ranging from device magnetic materials to approaches. is organized into three main sections. 1) Device technologies, including trench MOSFET, lateral gallium nitride (GaN) high electron mobility transistor, are discussed along with their intended applications. The critical role packaging highfrequency also assessed. 2)...

As a promising integration platform, silicon photonics need on-chip laser sources that dramatically improve capability, while trimming size and power dissipation in cost-effective way for volume manufacturability.Currently, direct heteroepitaxial growth of III-V structures on Si using quantum dots as the active region is vibrant field research, with potential to demonstrate low-cost, high-yield, long-lifetime, high-temperature devices.Ongoing work being conducted reduce consumption, maximize...

We report the use of highly ordered, dense, and regular arrays in-plane GaAs nanowires as building blocks to produce antiphase-domain-free thin films on exact (001) silicon. High quality were grown V-grooved Si substrates using selective aspect ratio trapping concept. The 4.1% lattice mismatch has been accommodated by initial GaAs, a few nanometer-thick with high density stacking faults. bulk wires exhibited smooth facets low defect density. An unusual mechanism “tiara”-like structure formed...

High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot grown patterned with {111} v-grooves lying in the [110] direction. No additional Ge buffers or substrate miscut was used. The active region consists of five InAs/InGaAs dot-in-a-well layers. achieve continuous wave lasing thresholds as low 36 mA operation up to 80°C.

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Gallium nitride (GaN) devices are gathering momentum, with a number of recent market introductions for wide range applications such as point-of-load converters, OFF-line switching power supplies, battery chargers, and motor drives. This paper studies the basic characteristics 600 V cascode GaN switch, voltage distribution during turn-ON turn-OFF transition. The loss mechanism switch is analyzed in detail, including impact package parasitic inductance both hard- soft-switching modes. A 5 MHz...

The electrocaloric effect demands the maximized degree of freedom (DOF) polar domains and lowest energy barrier to facilitate transition polarization. However, optimization DOF barrier-including domain size, crystallinity, multiconformation coexistence, correlation, other factors in bulk ferroelectrics-has reached a limit. We used organic crystal dimethylhexynediol (DMHD) as three-dimensional sacrificial master assemble conformations at heterogeneous interface poly(vinylidene fluoride)-based...

In this work, we report the growth and fabrication optimization of a long wavelength InAs/GaSb type-II superlattice (T2SL) nBn detector grown by metal–organic chemical vapor deposition. A GaAs like interfacial scheme was employed to grow T2SLs matched InAs substrates. larger bandgap T2SL used as an electron barrier, removing need for AlSb based materials within detector. At 77 K −0.1 V, photodetector showed dark current density 2.2 × 10−2 cm−2 100% cutoff 13 µm. The external quantum...

Abstract Recent studies have shown that piezoelectric materials containing defects can exhibit significant electrobending, leading to ultrahigh apparent strain and asymmetric strain‐electric field curves. The mechanism of electrobending deformation is particularly important how achieve in ferroelectric ceramics a research topic. In this work, sodium bismuth titanate‐based (NBT) ceramics, typical lead‐free ferroelectrics, are designed demonstrate the correlation between poling process...

Gallium nitride high electron mobility transistor (GaN HEMT) has matured dramatically over the last few years. More and more devices have been manufactured field in applications ranging from low power voltage regulator to infrastructure base-stations. Compared state of art silicon MOSFET, GaN HEMT much better figure merit is potential for frequency application. In general, 600V intrinsically normally-on device. To easily apply depletion mode circuit design, a MOSFET series drive HEMT, which...

We report InAs/InGaAs quantum dot (QD) waveguide photodetectors (PD) monolithically grown on silicon substrates.A high-crystalline quality GaAs-on-Si template was achieved by aspect ratio trapping together with the combined effects of cyclic thermal annealing and strain-balancing layer stacks.An ultra-low dark current 0.8 nA an internal responsivity 0.9 A/W were measured in O band.We also report, to best our knowledge, first characterization high-speed performance demonstration on-chip...

The cascode structure is widely used for high-voltage normally-on wide-bandgap devices. However, the interaction between device and low-voltage normally-off Si MOSFET may induce undesired features. This paper analyzes voltage distribution principle during turn-off transition as well zero-voltage-switching (ZVS) turn-on GaN capacitance mismatch switch causes to avalanche, internal lose ZVS condition. issue must be solved in consideration of both power loss reliability. A simple effective...

Subwavelength micro-disk lasers (MDLs) as small 1 μm in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs exhibit lasing 1.2-μm wavelength range low thresholds down to 35 μW at 10 K. compare favorably devices native GaAs substrates...

Avalanche photodiodes (APDs) on Si operating at optical communication wavelength band are crucial for the Si-based transceiver application. In this paper, we report first O-band InAs quantum dot (QD) waveguide APDs monolithically grown with a low dark current of 0.1 nA unit gain and responsivity 0.234 A/W 1.310 μm (−5 V). linear mode, have maximum 198 show clear eye diagram up to 8 Gbit/s. These QD-based enjoy benefit sharing same epitaxial layers processing flow as QD lasers, which could...

We calculate, within the random-phase approximation, elementary excitation spectrum of quasi-one-dimensional electron systems as occurring, for example, in semiconductor microstructures. Using multisubband models, we derive and discuss dispersion relations both intrasubband intersubband excitations consider mode-coupling effect between them. show that depolarization shift correction could be very large, increasing collective mode energy substantially above single-particle separation, and,...

High-quality c-axis-oriented Ca3Co4O9 thin films have been grown directly on Si (100) wafers by pulsed-laser deposition without prechemical treatment of the substrate surface. Cross-sectional transmission electron microscopy shows good crystallinity films. The Seebeck coefficient and resistivity are 126μV∕K 4.3mΩcm, respectively, at room temperature, comparable to single-crystal samples. This advance demonstrates possibility integrating cobaltate-based high thermoelectric materials with...

Electrically pumped on-chip C-band lasers provide additional flexibility for silicon photonics in the design of optoelectronic circuits. III–V quantum dots, benefiting from their superior optical properties and enhanced tolerance to defects, have become active medium choice practical light sources monolithically grown on Si. To fully explore potentials integrated telecommunications datacenters, we report realization 1.5 μm room-temperature electrically dot epitaxially complementary...

This paper presents the evaluation of high-voltage cascode gallium nitride (GaN) high-electron-mobility transistors (HEMT) in different packages. The GaN HEMT traditional package has high turn-on loss hard-switching condition, and severe internal parasitic ringing, which could possibly damage gate HEMT, turn-off due to parasitics. To solve these problems a stack-die is introduced, able eliminate all critical common-source inductors package, avoiding side effects caused by thus be more...

Monolithic integration of high-performance semiconductor lasers on silicon enables wafer-scale optical interconnects within photonic integrated circuits a manufacturing platform. III–V quantum dot (QD) stand out for their better device performances and reliability. QD grown substrates have been by wafer-bonding techniques with high quality. Direct growth offers an alluring alternative, using widely available large-area substrates. However, to date, notable achievements reported only in...

Miniaturized laser sources can benefit a wide variety of applications ranging from on-chip optical communications and data processing, to biological sensing. There is tremendous interest in integrating these lasers with rapidly advancing silicon photonics, aiming provide the combined strength optoelectronic integrated circuits existing large-volume, low-cost silicon-based manufacturing foundries. Using III-V quantum dots as active medium has been proven lower power consumption improve device...

A compact, efficient, and monolithically grown III–V laser source provides an attractive alternative to bonding off-chip lasers for Si photonics research. Although recent demonstrations of microlasers on (001) wafers using thick metamorphic buffers are encouraging, scaling down the footprint nanoscale operating nanolasers at telecom wavelengths remain significant challenges. Here, we report a integrated in-plane InP/InGaAs nanolaser array silicon-on-insulator (SOI) platforms with emission...