A5010280882- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Ga2O3 and related materials
- Silicon Carbide Semiconductor Technologies
- ZnO doping and properties
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Metal and Thin Film Mechanics
- Theoretical and Computational Physics
- Characterization and Applications of Magnetic Nanoparticles
- biodegradable polymer synthesis and properties
- Magnetic properties of thin films
- Dental materials and restorations
- Radio Frequency Integrated Circuit Design
- Thin-Film Transistor Technologies
- Conducting polymers and applications
- Integrated Circuits and Semiconductor Failure Analysis
Xidian University
2016-2025
Zhuhai Institute of Advanced Technology
2019
Case Western Reserve University
1992-2013
In this article, we demonstrate a novel E-mode HEMT featuring in situ AlN dielectric layer on p-GaN cap layer. Compared with conventional gate HEMT, the threshold voltage of AlN/p-GaN shifts from 1.8 to 3.9 V, and forward breakdown is increased 10.0 17.6 V. By considering 10 years' lifetime at 63% failure level, maximum applicable for reaches remarkable high value 12.1 V (E-model), which much higher than that 6.1 HEMT. addition, exhibits ON/OFF ratio <inline-formula...
Abstract Surface degradation of implanted poly(ether urethane)s was studied quantitatively with a micro‐ATR–FTIR technique. Substantial observed particularly in the soft segment at α‐carbon adjacent to ether linkage. The caused changes concentration profiles soft‐segment groups depth direction, and affected up 10 microns after implantation for weeks. Inhibition by antioxidants indicated oxidative nature degradation. An vivo urethane) mechanism proposed.
In this letter, more than 3000 V reverse blocking Schottky-drainAlGaN-channelHEMTs are demonstrated for the first time. By using Schottky drain technology, forward breakdown voltage <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FB</sub> (at 10 μA/mm) is improved from 1850~2100 to 2200~2600 LGD = 22μm. Due high electric field of AlGaN material, xmlns:xlink="http://www.w3.org/1999/xlink">RB</sub> reaches as -1950 ~ -2200 V. For HEMTs with L...
In this article, the single event burnout (SEB) performances for 2DEG Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub> <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{Ga}_{{1}-{x}}\text{N}$ </tex-math></inline-formula> channel p-GaN gate high electron mobility transistors (HEMTs) have been investigated comprehensively to reveal failure mechanisms and broaden applications in harsh...
High-electron-mobility transistor (HEMT) with AlN/GaN superlattice (SL) channel has been demonstrated on a silicon substrate. High OFF-state breakdown voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BR</sub> of 670 (gate-drain spacing L xmlns:xlink="http://www.w3.org/1999/xlink">GD</sub> = 8 μm) along maximum output current 196 mA/mm, electron total mobility 507 cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> / V·s, and an...
In this article, the Au-free complementary metal oxide semiconductor (CMOS) transistor compatible AlGaN-channel high-electron-mobility transistors (HEMTs) on silicon substrate with 2-kV forward and reverse blocking voltages have been reported. Due to designed AlGaN epitaxial layers, breakdown (BVs) of conventional HEMTs L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GD</sub> = 5/10/15/ 20/ 25 μm are 420/1070/1590/1920/2000 V respectively,...
In this letter, we report a high performance GaN quasi-vertical Schottky barrier diode (SBD) on sapphire substrate with planar anode selective fluorine treatment (SFT). The presented SBD SFT–SBD exhibits large forward current density over 2 kA cm−2 and low differential specific on-resistance of 0.49 mΩ cm2. Compared to the conventional SBD, leakage is suppressed 4 orders magnitude, leading breakdown voltage (BV) dramatically improved from 78 145 V, but without severe degradation on-state...
A novel strain engineering is reported to realize enhancement-mode high electron mobility transistors (HEMTs) with ultralow specific on-resistance ( <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\boldsymbol{R}_{\mathbf{on},\mathbf{sp}}$</tex> ) fabricated on 200 mm CMOS-compatible process platform. In this scheme, a enhancement layer deposited the access region of HEMT by low cost CVD demonstrated reduce . As comparing 100 V-rated without...
In this work, we proposed an on-chip protection circuit to enhance the gate ESD robustness for AlGaN/GaN E-mode power HEMT, based on monolithic 8" GaN-on-Si technology platform. The developed features: 1) a voltage divider formed by 2 lateral field-effect-rectifiers and 2DEG resistor in series; 2) discharge HEMT with its G/S parallel D/S of HEMT. forward event, starts dissipate energy when drop across is higher than Vth. While reverse operates diode connection mode conduction current. A...
As seen in Fig. 2a,b the Néel relaxation time is more than 4 orders of magnitude larger Brownian when a 40 mT magnetic field suddenly turned off. We note that 〈x〉 proportional to magnetization. These series are consistent with τ <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">b</inf> = 3.05 µs and xmlns:xlink="http://www.w3.org/1999/xlink">n</inf> 81 ms from formulas. From this, one might be tempted conclude can ignored for these particle...
In this paper, it is demonstrated that the AlGaN high electron mobility transistor (HEMT) based on silicon wafer exhibits excellent high-temperature performance. First, output characteristics show ratio of on-resistance (
Abstract In this work, the effect of gamma irradiation on quasi-vertical GaN Schottky barrier diodes with a passivation layer was investigated for first time. The forward I–V characteristic improved and reverse leakage slightly increased after 1 Mrad irradiation. Moreover, annealing process carried out current recovered while continued to increase annealing. Then possible mechanism based film proposed explain behavior passivated device.
In this paper, the principle of discharge-based pulsed I–V technique is introduced. By using it, energy and spatial distributions electron traps within 4-nm HfO2 layer have been extracted. Two peaks are observed, which located at ΔE ~ −1.0 eV −1.43 eV, respectively. It found that former one close to SiO2/HfO2 interface latter gate electrode. also observed maximum discharge time has little effect on distribution. Finally, impact electrical stress studied. During stress, no new states...
As wide bandgap semiconductors, gallium nitride (GaN) lateral high-electron-mobility transistors (HEMTs) possess high breakdown voltage, low resistance and frequency performance. PGaN gate HEMTs are promising candidates for high-voltage, high-power applications due to the normally off operation robust reliability. However, threshold gate-breakdown voltages relatively compared with Si-based SiC-based power MOSFETs. The epitaxial layers device structures were optimized enhance main...