A5072987232- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Ga2O3 and related materials
- Integrated Circuits and Semiconductor Failure Analysis
- ZnO doping and properties
- Radiation Effects in Electronics
- Radio Frequency Integrated Circuit Design
- Induction Heating and Inverter Technology
- Power Systems and Renewable Energy
- Ion-surface interactions and analysis
- Semiconductor Quantum Structures and Devices
- Energy Harvesting in Wireless Networks
- Advanced DC-DC Converters
- Islanding Detection in Power Systems
- Ferroelectric and Negative Capacitance Devices
- Microgrid Control and Optimization
- Membrane Separation Technologies
- Electrostatic Discharge in Electronics
- Diamond and Carbon-based Materials Research
- Advanced Memory and Neural Computing
China Resources (China)
2022-2025
Chongqing University
2021-2023
Shanghai Jiao Tong University
2022
Zhuhai Institute of Advanced Technology
2019-2021
National Engineering Research Center of Electromagnetic Radiation Control Materials
2017-2018
University of Electronic Science and Technology of China
2017-2018
In this paper, the ESD protection circuit for p-GaN gate HEMTs with bidirectional clamp is proposed and investigated. circuits consist of several forward diodes in serials a reverse diode. During pulse, discharging channel built to source voltage clamped at safety value. Based on experimental verification, clamps have functionality by being triggered required exhibit high secondary breakdown current both transient events. Meanwhile, can decrease power loss static state.
A research on breakdown voltage improvement of the enhancement mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) has been carried out. novel step-etched GaN buffer structure combined with a thin is studied by simulating. Both and can improve voltage. The reduce conductivity as well alleviate vertical electric field. And form two field peaks thus decrease original one. With same gate-drain length 7 μm, optimized increases from 316 V to 1487 V, specific on-state resistance...
In this article, a novel silicon carbide double-trench MOSFET with an integrated fully depleted P-base MOS-channel diode is proposed and investigated by calibrated TCAD simulations. The (SiC) features region achieved shrinking the source trench mesa in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${z}$ </tex-math></inline-formula> -direction. Due to significantly reduced conduction band energy region,...
The current collapse and hot electron effect of 100 V normally-off GaN power HEMTs are investigated. GaN-on-Si fabricated on an industrial 200 mm Si CMOS compatible technology platform. double pulse test (DPT) the dynamic high temperature operating life (DHTOL) implemented to verify on-resistance (dynamic Ron) stability. Wafer level reliability is performed investigate electric field HEMT. It proved that Ron stability HEMT qualified (Ron/Rini, static < 1.2) when drain-source off-state...
A vertical GaN-based field-effect transistor with an integrated MOS-channel diode (MCD) is used to improve the reverse conduction characteristic and transient single-event effect (SEE). The device features MCD acting as a free-wheel formed between trench source metal on dielectric P-type blocking layer (PBL), wherein MIS structure by source, N-drift. At (VSD > 0 V, VGS ≤ V), because channel PBL opened, turns realize low turn-on voltage (VRT) VRT independent of VGS. forward (VDS 0, Vth),...
A novel GaN current-aperture vertical electron transistor (CAVET) with an energy band pinning (EBP) structure (EBP-CAVET) is proposed and investigated by simulations. The EBP-CAVET featured hybrid contacts on the p-GaN layer, locally having Ohmic contact combined Schottky gate metals in longitudinal direction. shorted to source electrode are electrode. conduction (Ec) region modulated alternately arranged contacts. In region, Ec remains a fixed value, which acts as suppresses variation of...
This paper investigates the total ionizing dose (TID) effect of memory cell ferroelectric random access (FRAM) under electron, X-ray, and Co-60 γ ray radiation sources. An electron accelerator an X-ray microbeam from synchrotron, which are used to simulate given environments, offer local irradiation on FRAM cell. In addition, source provides global full chip FRAM. The is proved have a lower failure threshold for TID than thin-film capacitor due performance degradation nMOS transistor in...
In this work, we proposed an on-chip protection circuit to enhance the gate ESD robustness for AlGaN/GaN E-mode power HEMT, based on monolithic 8" GaN-on-Si technology platform. The developed features: 1) a voltage divider formed by 2 lateral field-effect-rectifiers and 2DEG resistor in series; 2) discharge HEMT with its G/S parallel D/S of HEMT. forward event, starts dissipate energy when drop across is higher than Vth. While reverse operates diode connection mode conduction current. A...
In this paper, we discuss possible solutions to overcome the critical issues for GaN-on-Si power device popularization including cost competitiveness Si MOSFETs, system level reliability verification, and electromagnetic interference (EMI) mitigation at high switching frequency without compromising loss. Both an advanced epitaxy technology a comprehensive platform of 200 mm electron mobility transistors (HEMTs) mass production are presented. A novel strain engineering is reported realize...
In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the selective regrowth (SR) AlN/AlGaN strain layers has been proposed. The novel engineering is used to realize 2-D gas (2DEG) redistribution by polarization effect and surface electric field optimization modulation effect. SR increase 2DEG density in access region reduce ON-resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...
In this paper, a theoretical model of hot carrier effect is analyzed. The simulation method MOSFET detailed based on Silvaco TCAD. Where after, work introduces the accelerated lifetime experiment assessing reliability n-MOSFET in 0.18μm CMOS technology. phenomenon degradation device characteristics and failure mechanism are discussed according to results experiment. Eventually, evaluated.
Download This Paper Open PDF in Browser Add to My Library Share: Permalink Using these links will ensure access this page indefinitely Copy URL Novel High-Voltage Gan Cavet with High Threshold Voltage and Low Reverse Conduction Loss 12 Pages Posted: 24 Feb 2024 See all articles by Chengtao LuoChengtao Luoaffiliation not provided SSRNCheng Yangaffiliation SSRNZhijia Zhaoaffiliation SSRNXintong Xieaffiliation SSRNYuXi Weiaffiliation SSRNJie SSRNJingyu Shenaffiliation SSRNJinpeng Qiuaffiliation...
In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the novel strain technology (NST) has been proposed. The NST consists of GaN/AlGaN/GaN and AlN/AlGaN/GaN heterojunctions laterally from to drain side. By utilizing different polarization effect these two heterojunctions, it forms density two-dimensional gas (2DEG). Accordingly, decreases electric field around introduces extra peak far away edge improve breakdown voltage (BV)...
AlGaN/GaN high electron mobility transistors (HEMTs) have obvious advantages over Si devices in high-frequency resonance converters such as a DC-DC full-bridge resonant converter due to GaN HEMTs' characteristics of low gate charge, output capacitor and insignificant reverse recovery charge. In power density applications, there are more the LLC with full bridge than half system. this article, 250-Watt 48V-5V frequency using 100V HEMTs is proposed, which achieves 96.6% peak value efficiency...
Reliability of commercial 100V E-mode GaN-on-Si power HEMTs are presented, fabricated on an industrial 200mm Si CMOS compatible Au-free technology platform. Electrical characteristics GaN discussed first, delivering true operation with Vth ~1.5V and ultralow drain leakage current <; 1e-10A/mm at fully rated 100V. Then, for the first time, successful JEDEC qualification transistors substrate is reported. Finally, collapse or dynamic Rds-on free up to demonstrated 100 kHz a stress-to-measure...
In this work, performance degradation of 65 nm N‐channel metal‐oxide‐semiconductor field effect transistors (NMOSFETs) with enclosed gate and two‐edged layouts under hot carrier stress constant voltage is investigated. Compared the cold carrier, (HCE) causes more serious in threshold transconductance. It shown that contribution reversible, while HCE damage permanent, it cannot be reversed by application annealing bias. Meanwhile, an NMOSFET proved to have higher resistance than fabricated...
The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick oxide, the degradation mechanism time-dependent dielectric (TDDB) is found be different. It that current (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"...
In this article, a novel evaluation methodology for the reliability and lifetime of E-mode AlGaN/GaN high electron mobility transistors (HEMTs) has been proposed. A practical example is presented commercial 100 V GaN-on-Si power HEMTs, which are fabricated on an industrial 200 mm Si CMOS compatible technology platform. First, wafer-level test (WLRT), Joint Electron Device Engineering Council (JEDEC) qualification, dynamic high-temperature operating life (DHTOL) HEMTs mass production have...
As a new demand-side management technology, electric spring can effectively suppress the bus voltage fluctuation and is widely used in microgrids. power electronic device, connection of to grid will affect system stability. For DC microgrid system, this paper analyzes stability with spring(DCES). Constructed small signal model DCES. Factors affecting are studied terms line length, load, number DCESs. Then, for multiple DCESs, effects droop coefficient distance DCESs on also studied. The...