A5086894400- Silicon Carbide Semiconductor Technologies
- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Ga2O3 and related materials
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
- Multilevel Inverters and Converters
- Quantum Computing Algorithms and Architecture
- ZnO doping and properties
- Glass properties and applications
- Microgrid Control and Optimization
- Solid State Laser Technologies
- Radiation Effects in Electronics
- Electrostatic Discharge in Electronics
- Optimal Power Flow Distribution
- Metal and Thin Film Mechanics
- Education and Work Dynamics
- Spectroscopy and Laser Applications
- Photocathodes and Microchannel Plates
- Thermal properties of materials
- RNA regulation and disease
- Photonic Crystal and Fiber Optics
- Cloud Computing and Resource Management
- HVDC Systems and Fault Protection
First Affiliated Hospital of Zhengzhou University
2025
Chongqing University
2010-2024
Luoyang Institute of Science and Technology
2024
Harbin Engineering University
2024
Xidian University
2018
Waseda University
2015-2016
Jilin Business and Technology College
2012
This paper explores the next stage of GaN power devices with 2-level integration peripheral low voltage active and passive devices. The 1 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">st</sup> level consists protection/control/driving circuits, which potentially improves performance overcomes challenges to 2 xmlns:xlink="http://www.w3.org/1999/xlink">nd</sup> has high-low side on-chip on a 100V technology platform. challenge channel modulation...
In this article, a novel double-trench SiC MOSFET with an integrated MOS-channel diode (MCD) is proposed and analyzed through TCAD simulations. The MCD incorporates short channel, where the channel length can be adjusted by modifying recess depth. Owing to drain-induced barrier-lowering (DIBL) effect, low potential barrier created for electrons flowing from JFET region N+ source region. This effectively eliminates bipolar degradation of parasitic body p-i-n reduces cut-in voltage Von 69.2%....
Extra-motor symptoms are increasingly recognised in amyotrophic lateral sclerosis (ALS), encompassing cognitive, social, and behavioural deficits that can substantially impact quality of life. TAR DNA binding protein 43 (TDP-43) pathology is the central disease marker almost all cases ALS approximately half frontotemporal dementia (FTD). However, mechanisms linking TDP-43 with extra-motor TDP-43-associated neurodegenerative diseases remain unresolved. In this study, we used rNLS8 mouse...
Background Neurodegenerative diseases (NDs) are chronic and progressive conditions that significantly impact global public health. Recent years have highlighted exosomes as key mechanisms involved in these diseases. This study aims to visualize analyze the structure content of NDs based on past research identify new ideas directions. Through bibliometric analysis, we assess current state field worldwide over decade, highlighting significant findings, major areas, emerging trends. Methods...
In this article, a recessed source trench silicon carbide (SiC) MOSFET with integrated MOS-channel diode (MCD) is proposed and investigated by TCAD simulations. The MCD features short channel, the channel length could be adjusted varying depth. Owing to drain-induced barrier lowering effect, low potential for electrons flow through JFET region N+ formed, which successfully eliminates bipolar degradation of parasitic body p-i-n diode. Besides, introduces an additional depletion homogenizes...
A research on time-resolved threshold voltage instability of 650-V Schottky type p-GaN gate Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.2</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.8</sub> N/GaN high electron mobility transistor (HEMT) under high-temperature bias (HTGB) conditions has been carried out. Both forward and reverse are applied. We found that the AlGaN/GaN HEMT shifts negatively (HTFB), while positively (HTRB)....
A novel segmented laterally diffused MOS embedded silicon-controlled rectifier (SCR) structure, called NSLDMOS-SCR, is proposed and verified in an optimal 5-V/40-V bipolar CMOS DMOS (BCD) process. Superior to the strip LDMOS-SCR, NSLDMOS-SCR exhibits a high holding voltage of 20.6 V excellent failure current 12.2 width <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$200~\mu \text{m}$...
A research on breakdown voltage improvement of the enhancement mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) has been carried out. novel step-etched GaN buffer structure combined with a thin is studied by simulating. Both and can improve voltage. The reduce conductivity as well alleviate vertical electric field. And form two field peaks thus decrease original one. With same gate-drain length 7 μm, optimized increases from 316 V to 1487 V, specific on-state resistance...
A novel p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) structure with a stepped hybrid GaN/AlN buffer layer (S-HEMT) is proposed and simulated by the Sentaurus TCAD in this paper. adopted step near interface of drain. First, breakdown voltage (<i>BV</i>) S-HEMT significantly improved introduction layer, which can effectively modulate electric field distributions along channel. Second, AlN below GaN has large band offset strong polarization, results much lower leakage current...
A research of total ionizing dose and annealing effects on Schottky type p-GaN gate Al0.2Ga0.8N/GaN high electron mobility transistors (HEMTs) has been carried out. Devices with breakdown voltages 100V/200V/650V were irradiated under Co-60 X-rays. Radiation doses reach to a amount 500 krad (Si) rate 50 rad(Si)/s biases <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{GS}=0\text{V}$...
This paper reviews the physical breakdown mechanisms of Si-, SiC- and GaN-based power semiconductor devices. In off-state in which Si-based Lateral Double-diffused MOS (LDMOS), SiC-based Schottky Barrier Diode (SBD), PN junction gate are reverse-biased, avalanche is responsible for breakdown. For AlGaN/GaN high electron mobility transistors (HEMTs), due to absence a junction, there exist four mechanisms: (i) gate-leakage-current components, either through surface-hopping conduction mechanism...
In this paper, a novel 4H-SiC deep-trench super-junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with split-gate is proposed and theoretically verified by Sentaurus TCAD simulations. A deep trench filled P-poly-Si combined the P-SiC region leads to charge balance effect. Instead of full-SiC P in conventional MOSFET, new structure reduces thus helping lower specific on-resistance. As result, figure merit (FoM, BV2/Ron,sp) 642% 39.65% higher than C-MOS SJ-MOS, respectively.
In this article, a 1200-V asymmetric trench (AT) silicon carbide (SiC) metal–oxide–semiconductor field effect transistor (MOSFET) with an integrated junction (JFET) is proposed improved cut-in voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {cut-in}}$ </tex-math></inline-formula> ) and switching loss. For the device named IJ-ATMOS, bottom p-well in contact source can deplete...
This work investigated the effects of single stress and electro-thermo-mechanical coupling on electrical properties top-cooled enhancement mode (E-mode) Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron mobility transistor (HEMT) (GS66508T). Planar pressure, linear deformation, punctate environmental temperature, electro-thermal coupling, thermo-mechanical stresses were applied to device. It was found that different kinds had influence mechanisms Namely, excessive...
In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the selective regrowth (SR) AlN/AlGaN strain layers has been proposed. The novel engineering is used to realize 2-D gas (2DEG) redistribution by polarization effect and surface electric field optimization modulation effect. SR increase 2DEG density in access region reduce ON-resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Abstract An enhanced high frequency (HF) performance SiC metal oxide semiconductor field effect transistor (MOSFET) with self-adjusting P-shield region potential (SA-MOS) is proposed and characterized in this paper. The of (ground or floating potential) can be adjusted by a depletion P-channel (PMOS) structure integrated the SA-MOS. During turn-on SA-MOS, channel PMOS pinched off at potential. Therefore, SA-MOS shows about 21% specific on-resistance ( R on,sp ) reduction as compared to...
In this paper, a 650 V 4H-SiC trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with hetero-junction diode (HJD) and double current spreading layers (CSLs) is proposed studied based on Sentaurus TCAD simulation. The HJD suppresses the turn-on of parasitic body improves performance in third quadrant. CSLs different doping concentrations help to lower on-state resistance as well gate-drain capacitance. As result, decreased by 47.82% while breakdown voltage remains same turn-off...
This article investigates the impact of total ionizing dose (TID) on 100-V split-gate trench vertical double-diffused MOSFETs (SGT VDMOS). The experimental results for both ON-state and OFF-state irradiation are explored, focusing shift in threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{V}_{\text{th}}\text{)}$</tex-math> </inline-formula> breakdown (BV). physical mechanisms...