In this article, short-circuit capability prediction and failure mode of 1200-V-class SiC MOSFETs with a double asymmetric trench structure are proposed under single-pulse stress. A model is established to evaluate withstand time corresponding critical energy devices various dc bus voltages. This can provide quick predictive guidance even if there few test results, the predicted values consistent practical values. Furthermore, two modes investigated in test. For MOSFETs, gate damage at lower...

A novel planar gate SiC MOSFET embedding low barrier diode (LBD-MOSFET) with improved third quadrant and switching performance is proposed characterized in this letter. The LBD-MOSFET not only exhibits about 3 times lower turn on voltage than the body diode, but also successfully eliminates bipolar degradation phenomena. potential for electrons transporting from JFET region to N <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> source...

In this letter, a novel planar gate SiC MOSFET with embedded auto-adjust normally-on JFET (ADJ-MOSFET) is proposed and characterized to improve short circuit capability. The (AD-JFET) in P-well region as the conduction path of electrons from N-type source channel MOSFET. Meanwhile, P-type device splits into two parts, one which serves AD-JFET. Under high DC bus voltage (short circuit) conditions, effective width AD-JFET will be reduced by increased depletion charge. Therefore, potential...

In this letter, a general approach is presented to synthesize the coupling matrix that matches arbitrary frequency-invariant complex source and load. The converts objective scattering reference impedances into an admittance of multicoupled circuit based on definition power wave. proposed method was verified by numerical also simulated tests carried out with various impedances.

This paper presents a novel and efficient multiple-step-modulated JTE (MSM-JTE) termination technique for ultrahigh voltage (>10 kV) silicon carbide (SiC) devices, to extend the dose window increase breakdown voltage. MSM-JTE takes advantage of ring assisted JTE, etched space modulated relief local electric field concentration form gradual decrease effective charges overall. is similar lateral variation doping (VLD) which widely used in silicon. A practical fabrication processes also...

To provide a guideline for converter design and fault protection, the failure mechanism reliability of silicon carbide (SiC) power MOSFETs needs to be further investigated. In this paper, during short-circuit (SC) commercial 1.2-KV/19-A SiC was After SC tests, I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> device decreased significantly. Moreover, it found that V xmlns:xlink="http://www.w3.org/1999/xlink">th</sub>...

Abstract An enhanced high frequency (HF) performance SiC metal oxide semiconductor field effect transistor (MOSFET) with self-adjusting P-shield region potential (SA-MOS) is proposed and characterized in this paper. The of (ground or floating potential) can be adjusted by a depletion P-channel (PMOS) structure integrated the SA-MOS. During turn-on SA-MOS, channel PMOS pinched off at potential. Therefore, SA-MOS shows about 21% specific on-resistance ( R on,sp ) reduction as compared to...

Based on experiments desulfurization, CaSO4 decomposition, and a system approach using theoretical analysis, efficient in-furnace desulfurization in O2/CO2 combustion was investigated. The influence of conditions sorbent properties efficiency clarified. global found to increase with O2 purity. dry recycle higher than that wet recycle. decreased initial concentration. As the temperature increased, increased first then due decomposition CaSO4. In range investigated, coal much conventional air....

For ultra-high voltage SiC devices of 10kV and above, the length conventional FLR even reaches up to millimeters, which impedes miniaturization development in applications. In this paper, a novel termination structure Etching Uniform Field Limiting Ring (EU-FLR) for power device is proposed analyzed based on theory charge field modulation. The blocking capability achieves at 14.2kV EU-FLR exhibits reduction more than 30% size compared with FLRs. efficiency factor η <inf...

Traditional deep learning relies on end-to-end backpropagation for training, but it suffers from drawbacks such as high memory consumption and not aligning with biological neural networks. Recent advancements have introduced locally supervised learning, which divides networks into modules isolated gradients trains them locally. However, this approach can lead to performance lag due limited interaction between these modules, the design of auxiliary occupies a certain amount GPU memory. To...

This paper presents a general analytical approach to accurately predict the nonlinear distortion of varactor-tuned bandpass filters (BPFs) with arbitrary topology. The linearized circuit and its admittance matrix are derived study behavior by means Volterra-series representation. effects on third-order intermodulation characterized for principal filter parameters such as tunable resonator configuration, susceptance slope, fractional bandwidth, unloaded quality factor, theoretical analysis...

It is a tough challenge to find remote sensing image fusion method which can acquire spatial and spectral information as much possible from panchromatic (PAN) multispectral (MS) image. Sparse representation (SR) realize better than other popular methods, powerful tool for dealing with the signals of high dimensionality. In addition, gain results without color distortion, this paper propose algorithm SR matching in stead intensity hue saturation (IHS) model Brovey transform. The experimental...

Abstract A 13.5 kV 4H-SiC PiN rectifier with a considerable active area of 0.1 cm 2 is fabricated in this paper. Charge-field-modulated junction termination extension (CFM-JTE) has been proposed for satisfying the requirement ultra-high reverse voltage, which enlarges JTE dose tolerance window, making it approximately 2.8 times that conventional two-zone JTE. Besides, CFM-JTE can be implemented through process. The measured forward current up to 100 @ V F = 5.2 absence carrier lifetime...

Sludge composting is one of the methods sludge resource utilization that can reduce pollutants including pathogens. Enterococci were considered a better and more conservative indicator pathogen inactivation than fecal coliforms which are usually used as an pollution. Pathogenic bacteria may enter dormant state during leading to their residual risk. The dormancy enterococci related survival composting. However, not clear. Therefore, this research aims study in different phases simulated...

A novel SiC MOSFET with embedded unipolar diode (UD-MOSFET) is proposed and investigated by TCAD simulation in this paper. The (UD) exhibits 3 times lower turn-on voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(V_{\mathrm{on}})$</tex> than the parasitic body diode, resulting a 2 smaller reverse recovery charge xmlns:xlink="http://www.w3.org/1999/xlink">$(Q_{\mathrm{rr}})$</tex> successful elimination of bipolar degradation issue....