A5039641530- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- GaN-based semiconductor devices and materials
- Integrated Circuits and Semiconductor Failure Analysis
- Mechanical and Optical Resonators
- Semiconductor materials and interfaces
- Electrostatic Discharge in Electronics
- Induction Heating and Inverter Technology
- Advanced Fiber Optic Sensors
- Reliability and Maintenance Optimization
- Advanced MEMS and NEMS Technologies
- ZnO doping and properties
- Advanced Antenna and Metasurface Technologies
- Aluminum Alloys Composites Properties
- Microwave Engineering and Waveguides
- Antenna Design and Analysis
- Radio Frequency Integrated Circuit Design
- Physics of Superconductivity and Magnetism
- Ferroelectric and Negative Capacitance Devices
- 3D IC and TSV technologies
- Power Line Inspection Robots
- Transition Metal Oxide Nanomaterials
- VLSI and Analog Circuit Testing
- Structural Engineering and Vibration Analysis
China Electronic Product Reliability and Environmental Test Institute
2022-2025
Ministry of Industry and Information Technology
2014-2024
University of Electronic Science and Technology of China
2009-2021
Translational Research Institute
2021
State Key Laboratory of Vehicle NVH and Safety Technology
2020
National Engineering Research Center of Electromagnetic Radiation Control Materials
2017
By using in situ health information, many existing studies for online remaining useful life (RUL) prediction adopt a stochastic process-based degradation model and computation-intensive parameter estimation method RUL of single operating asset. Nevertheless, it is common that there are multiple assets under operation, would be more statistically efficient to jointly update their RULs by allowing information sharing among them estimation. To this end, we propose collaborative framework with...
In converter applications, the body diode SiC MOSFET is often repurposed as freewheeling to reduce cost and save space, it potentially leads device bipolar degradation. This paper analyzes compares degradation mechanisms of a 1200 V under both DC pulsed current stress conditions. The study reveals that occurs at faster rate than stress, due contraction dislocations in during off-state current, overall becomes slower. At lower densities, process exhibits an activation phase before...
3D-integrated GaN power modules can effectively reduce parasitic parameters and enhance the system's performance. However, heat from each chip during operation lead to a mutual thermal coupling effect, potentially causing performance drift of chips. This work investigates impact effect in module on characteristics its The chips' are measured before after other chips applying VGS/VDS = 3 V/1 V for 60 s. results indicate that cause rightward shift threshold voltage, response speed on-state...
The degradation behavior and its mechanisms of E-mode GaN high electron mobility transistors (HEMTs) with p-GaN gate under electrostatic discharge (ESD) stress were investigated. Reverse short-pulse was generated by a transmission line pulse (TLP) tester in order to simulate the static electricity. experiment results show that reverse leads characteristic HEMTs gate. values threshold voltage ON-resistance increase, capacitance curve shifts positively. low-frequency noises (LFNs) obtained for...
Power cycling test (PCT) is an effective method to evaluate the SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> s' long-term reliability, including lifetime and degradation mechanisms. Some of aging precursors PCT have been identified in previous literature. But when multiple failure mechanisms compete with each other, individual are nullified. Although mainly used package there still unresolved problems due gate oxide...
The threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {th}}{)}$ </tex-math></inline-formula> instability of SiC MOSFETs is much more serious than that Si MOSFETs. For most purposes, it beneficial to perform an additional preconditioning prior measuring the {th}}$ . recent standard JEP183A published in 2023 describes guidelines for measurement methods and testing N-channel...
In this Letter, we investigate the threshold voltage (VTH) instability of Schottky p-GaN gate high electron mobility transistors (SP-HEMTs) under high-frequency operation by a resistive-load hard switching method. The abnormal VTH is observed, which different between fully and partially depleted SP-HEMTs (FD- PD-HEMTs). Notably, for FD-HEMT, shifts positively with effective stress time. However, in PD-HEMT more complex. At low VGS (e.g., 3 V) 6 V), time consistently. Nevertheless, at...
In this article, we experimentally investigate the degradation mechanisms of GaN high-electron mobility transistors (HEMTs) with p-type gate during long-term hightemperature reverse bias (HTRB) stress and negative temperature instability (NBTI) stress. Based on a number stress/recovery experiments, demonstrate that HTRB could lead to hole emission in p-GaN layer, making threshold voltage (Vth) positively shift, while NBTI result detrapping at AlGaN/GaN interface or AlGaN layer make Vth...
In this paper, the degradation behavior of electrical characteristics was investigated, and trap analysis based on low-frequency noise (LFN) carried out for commercial 1.2-kV/30-A silicon carbide (SiC) power MOSFETs under repetitive short-circuit (SC) stress. The experiment results show that on-state resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dson</sub> ) threshold voltage (V xmlns:xlink="http://www.w3.org/1999/xlink">th</sub>...
This work investigates the degradation mechanism of 1.2 kV silicon carbide (SiC) metal oxide semiconductor field-effect transistor (MOSFET) under positive or negative long-term high-temperature gate bias (HTGB) stress. After HTGB stress, device shows a shift in threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {th}}{)}$ </tex-math></inline-formula> and an increase ON-state...
The chip-level degradation and packaging-level of SiC MOSFET coupled affected each other in the process power cycling test (PCT). parameters monitored online are result coupling action multiple failure mechanisms. features more complex to distinguish. In this work, reliability issues module were investigated by PCT saturation mode body diode with constant current junction temperature swing ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...
In this study, the electrical characteristics of depletion-mode AlGaN/GaN high-electron-mobility transistors (HEMTs) with a SiNx gate dielectric were tested under hydrogen exposure conditions. The experimental results are as follows: (1) After treatment at room temperature, threshold voltage VTH original device was positively shifted from −16.98 V to −11.53 V, and positive bias 5.45 V. When VDS swept 0 1 VGS IDS reduced by 25% 9.45 A 7.08 A. (2) Another group devices identical performance,...
In this work, we have comprehensively investigated the degradation behaviors and mechanism of 1.2 kV silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) under repetitive surge current stress. The experimental results show that negative drift threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {th}}$ </tex-math></inline-formula> ) is related to gate...
Abstract A novel black-box modeling method for field effect transistor (FET) based on an improved K-Nearest Neighbors algorithm is proposed in this paper. algorithm, which has simple structure and high accuracy, shown great potential regression application. Taylor series expansion employed nonlinear elements of FET to improve the physical meaning model. GaN HEMT power device used demonstrate method. And experimentation shows that calculated results using model fit measurement well.
An improved SMES circuit topology is proposed for improving the energy storage and discharge efficiencies. The switching control principle of presented in detail with an experimental HTS coil system designed. results obtained verify that favorable charging, storing discharging magnetic a system.
To provide a guideline for converter design and fault protection, the failure mechanism reliability of silicon carbide (SiC) power MOSFETs needs to be further investigated. In this paper, during short-circuit (SC) commercial 1.2-KV/19-A SiC was After SC tests, I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> device decreased significantly. Moreover, it found that V xmlns:xlink="http://www.w3.org/1999/xlink">th</sub>...
Because of the wide application die top interconnects with Cu bonding wire, weak points in SiC MOSFET power modules presented a huge difference compared to conventional Al wire. The lack understanding failure modes and mechanisms has become an obstacle improving its reliability further. In this paper, accelerated aging module using DTS (Die Top System) was carried out cycling test (PCT). delamination upper sintered Ag layer became primary mode. wire Kelvin source also found burned out. It...
Abstract In this work, we investigate the degradation behavior and mechanism of p -gate AlGaN/GaN high-electron mobility transistors (HEMTs) for first time under hydrogen (H 2 ) atmosphere. The experimental results reveal significant decrease in drain-to-source current, negative drift threshold voltage, increase off-state gate leakage deterioration subthreshold swing HEMT after H treatment. electrical parameters is considered to poisoning phenomenon. Through secondary ion mass spectrometry...