Accurate modeling of electrothermal effects GaN electronic devices is critical for reliability design and assessment. In this paper, an model large signal equivalent circuit AlGaN/GaN HEMTs including self-heating ambient temperature presented. To accurately describe the effect temperature, two separate networks (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">diss</sub> , R C self-heating, I xmlns:xlink="http://www.w3.org/1999/xlink">amb</sub>...

In this paper, we propose and demonstrate a switchable terahertz metamaterial absorber with broadband multi-band absorption based on simple configuration of graphene vanadium dioxide (VO 2 ). The functional characteristics the can be achieved by changing phase transition property VO . When is insulating, device acts as absorbance greater than 90% under normal incidence from 1.06 THz to 2.58 THz. exhibits excellent performance wide range incident polarization angles for TE TM polarizations....

A scalable electrothermal large-signal AlGaN/GaN HEMTs model for both fundamental and multiharmonics is presented based on the modified Angelov model. To obtain accurate scalability of model, a simple empirical expression proposed geometric power-dissipation-dependent nonlinear thermal resistance R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> . Only one additional parameter with linear scaling rule needed in drain-source current (I...

We report radio frequency (rf) electrical readout of graphene mechanical resonators. The motion is actuated and detected directly by using a vector network analyzer, employing local gate to minimize parasitic capacitance. A resist-free doubly clamped sample with resonant ~ 34 MHz, quality factor 10000 at 77 K, signal-to-background ratio over 20 dB demonstrated. In addition being two orders magnitude faster than the rf mixing method, this technique paves way for use in devices such as filters...

To prevent the interference problem due to existing nearby communication systems within UWB operating frequency, a compact dual-band-notched antenna is presented. A novel modified complementary split-ring resonator (CSRR) etched inside inner patch obtain band-notched function. The proposed occupies area of 22×26 mm2. measurement results show that can guarantee wide bandwidth from 2.9 12 GHz (VSWR<2) with dual unwanted band notches. demonstrates omnidirectional radiation patterns across...

This paper presents an accurate quasi-physical compact large-signal model for GaN high electron mobility transistors (HEMTs). The drain current I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> expression is acquired by combining the zone division method and surface potential theory. proposed only contains 19 empirical parameters, with self-heating, ambient temperature trapping effects considered. self-heating are modeled a polynomial...

Summary This paper proposes an efficient parameter extraction algorithm for GaN high electron mobility transistors small‐signal equivalent circuit model. The combines scanning and iteration methods to solve the problem of error accumulation in conventional is implemented matlab programming. By using method, each time uses more accurate element values thus makes results converge optimal value faster. A 20‐element model used validate proposed algorithm, show that calculated S ‐parameters agree...

This letter presents a compact planar flexible antenna designed for wireless local area network (WLAN) using simple microfabrication techniques that are compatible with existing state-of-the-art electronic devices. The is fully insulated biocompatible Parylene C film, which shows cost-effective and highly feasible approach to making antennas implantable applications. Coating of ultrathin film has shown negligible effects on the return loss radiation patterns antennas. characteristics...

ABSTRACT Advanced packaging in electronic systems presents new challenges for electromagnetic interference issues. The source reconstruction method (SRM) based on near‐field scanning provides a solution locating sources and reconstructing the field inside package. traditional SRM least squares methods relies phase information, leading to expensive measurement facilities complex testing processes. As result, phaseless SRMs with lower requirements have become research hotspot. However, these...

A triple band‐notched UWB monopole antennas is presented for flexible electronics. To enhance the flexibility, ultra‐thin liquid crystal polymer with 50 μm thickness used as substrate. The are constituted by swallow tail radiation patch and trapezoid ground. Moreover, characteristic realised etching different sized elliptic single complementary split‐ring resonators on patch. An improved antenna notched‐frequency bands at 3.7–4.2 GHz, 5.15–5.35 5.725–5.825 GHz designed a novel capacitance...

An accurate physical model for GaN high-electron-mobility-transistors (HEMTs) device is imperative and crucial circuit design technology optimization. In this paper, a scalable large-signal surface-potential (SP) of AlGaN/GaN HEMTs presented. The drain current capable accurately modeling the self-heating effect trapping effect. modeled by embedding temperature increment into free-carrier mobility model, introducing an indirect variable effective gate voltage V <sub...

This paper presents a universal scalable thermal resistance model for AlGaN/GaN high electron-mobility transistors (HEMTs), which can be easily implemented into compact large-signal models and is very suitable rapid device modeling. It contains all the key HEMT geometric parameters such as gate length, width, pitch, different layer thicknesses. The temperature-dependent conductivities of materials are taken consideration. via-holes effects on also included, considered first time in...

In this article, the normally- OFF oxidized Si-terminated (C–Si) diamond metal–oxide–semiconductor field-effect transistors (MOSFETs) with as-deposited 0.5-nm silicon on annealed at high temperature as subsurface p-channel were presented for first time. A novel method utilizing both a metal mask to realize regrown heavily boron-doped (001) layer (p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -diamond-first) and molecular beam...

In this paper, a new method for the separate extraction of temperature-dependent source (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</sub> ) and drain xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> access resistances in gallium nitride (GaN) high electron-mobility transistors (HEMTs) by using definition is reported. Based on method, (TDARs) 0.15 μm gate-length GaN HEMT with unequal gate-source gate-drain distance are extracted. By...

In this paper, the buffer-related current collapse (CC) in AlGaN/GaN HEMTs is investigated by using pulsed I-V measurements and 2-D drift-diffusion simulations. The simulation results indicate that negative potential (NP), appearing Fe-doped buffer under gate, found to account for CC. NP will induce threshold voltage shifts, which an inflection point (IP) of found. It could be revealed characteristics are significant depict trapping effect when building a compact large-signal model....

A GaN HEMTs nonlinear large-signal statistical model based on empirical equivalent circuit including electrothermal effect and trapping effects is proposed in this letter. The constructed by one stage R-C network, the modeled effective gate (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gseff</sub> ) bias Angelov model. Thirty-four from 10 batches are measured all parameters extracted in-house extraction program. method combining principal...

Process fluctuations can significantly affect the yield of millimeter-wave circuits based on submicrometer semiconductor processes. A yield-improvement design that incorporates passive is well established. However, how to consider process fluctuation in active circuit designs (e.g., power amplifiers) and improve still a challenge. In this article, load-pull method, which be used find optimum load impedance accounting for high while maintaining good output performance, presented. The theory...

To meet the demands of advanced integrated electronic warfare systems with satellite communication modules, a 6–18-GHz monolithic microwave circuit (MMIC) power amplifier (PA) excellent harmonic suppression at 10 GHz was designed using 0.15- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> gallium nitride (GaN) high electron mobility transistor process. An elliptic...

In this paper, the performance difference of AlGaN/GaN high-electron mobility transistors (HEMTs) with same epitaxial structure fabricated silicon carbide (SiC) and transferred to diamond substrate is examined based on surface-potential (SP) model. The thermal resistances these devices are extracted through finite element method (FEM) analysis. Results show that GaN-on-diamond device has a lower resistance than conventional GaN-on-SiC device, which demonstrates improvement GaN-on-Diamond...

This paper describes the design and demonstration of a 135–190 GHz self-biased broadband frequency doubler based on planar Schottky diodes. Unlike traditional bias schemes, diodes are biased in resistive mode by self-bias resistor; thus, no additional voltage is needed for doubler. The this verification micron-scaled devices with an anode area 6.6 μm2 epitaxial layer thickness 0.26 μm. For accurate doubler, 3D-EM model diode built up to extract parasitic parameters induced package when rises...

In this paper, we propose and demonstrate a terahertz bandpass filter based on substrate integrated plasmonic waveguide (SIPW) using the standard 0.25-μm InP DHBT fabrication process. design, Yagi-Uda antenna-like subwavelength array with effective asymptotic frequency reduction, is etched top metal layer of (SIW) to support spoof surface plasmon polaritons (SSPPs) mode. The transmission unique dispersion characteristics SIPW can be easily engineered by tuning SIW SSPPs geometric parameters...

Accurate characterization of transistor noise performance is significant for low-noise amplifier (LNA) design. The conventional empirical model contains too many fitting parameters and thus relies on a large number on-wafer measurements, especially the ambient temperature effects modeling. In this article, an improved modeling method using quasi-physical zone division (QPZD) theory proposed. boundary potential calculation in traditional by considering charge depletion region when ON-state,...