A5053282449- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- Diamond and Carbon-based Materials Research
- Ga2O3 and related materials
- Radio Frequency Integrated Circuit Design
- Metal and Thin Film Mechanics
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- ZnO doping and properties
- Electronic and Structural Properties of Oxides
- Microwave and Dielectric Measurement Techniques
- Microwave Engineering and Waveguides
- Photonic and Optical Devices
- Advanced Power Amplifier Design
- Semiconductor Lasers and Optical Devices
- Ion-surface interactions and analysis
- Semiconductor Quantum Structures and Devices
- Advanced Photocatalysis Techniques
Shanghai Jiao Tong University
2024
Nanjing Institute of Technology
2019-2024
University of Electronic Science and Technology of China
2023
Huzhou University
2023
Yangtze River Delta Physics Research Center (China)
2023
Shanghai Fudan Microelectronics (China)
2022
Shanghai Institute of Microsystem and Information Technology
2022
Chinese Academy of Sciences
2022
Fudan University
2022
University of Chinese Academy of Sciences
2022
A high frequency hydrogen-terminated diamond metal-insulator-semiconductor field-effect transistor (MISFET) with extremely small source-drain distance of about 350 nm was realized by self-aligned process on (001)-oriented single crystal substrate. To suppress the gate leakage current, a low temperature Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> film deposited as insulator...
Based on a device-first transfer process, 3-inch polycrystalline diamond substrate is bonded within 1.5 μm of the junction in GaN high electron mobility transistors (HEMTs) to enhance heat removal high-power RF devices. Highly preserved electrical performance demonstrated by comparison exactly same HEMT device prior and after transfer. The residual compressive strain relaxation whole epilayer does not reduce 2-D gas sheet density. dc characteristics show weakened self-heating GaN-on-diamond...
Monolithic integration of enhancement/depletion (E/D)-mode AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) are demonstrated for mixed signal applications. The gate length the E-mode and D-mode devices 0.2 μm 0.35 μm, respectively, drain current 496 (Vgs=+5 V) 720 mA/mm (Vgs=0 with a peak transconductance 147 131 mS/mm measured. Small-signal measurements result matched current-gain cutoff frequency (fT)/maximum oscillation (fmax) 29.9/55.2 GHz 27.5/47.5...
High power performance InAlGaN/GaN high electron mobility transistor (HEMT) as a candidate for and frequency amplifiers has been demonstrated versus the conventional AlGaN/GaN HEMT by using same device processes. Comparing with its counterpart, exhibits much larger output current density of 1.94 A/mm due to higher 2-D gas 2.0 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> cm xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> thin...
In this paper, the performance difference of AlGaN/GaN high-electron mobility transistors (HEMTs) with same epitaxial structure fabricated silicon carbide (SiC) and transferred to diamond substrate is examined based on surface-potential (SP) model. The thermal resistances these devices are extracted through finite element method (FEM) analysis. Results show that GaN-on-diamond device has a lower resistance than conventional GaN-on-SiC device, which demonstrates improvement GaN-on-Diamond...
The gate reliability of p-GaN AlGaN/GaN high electron mobility transistors with a ring-gate structure is investigated by step-stress experiments under bias, combined electroluminescence imaging and pulsed measurements. For stress (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Gstress</sub> ) from 0 to 13 V, the drain current found be stable decreases at V OFF-state increases ON-state. 31 ON-state, whereas...
Temperature-dependent dc and dynamic characteristics of p-GaN gate HEMT were thoroughly investigated from 300 to 140 K. At low temperature, in addition barely shifted threshold voltage, substantial improvement drain current was observed. K both positive negative bias stressing applied the device order form a complete mapping voltage instability HEMT. Three mechanisms, namely hole trap emission, carrier out-spilling, accumulation have been employed elucidate trends shift at room temperature....
Heterointegrated Ga2O3-on-SiC radio-frequency (RF) MOSFETs with record-high frequency performances were reported. A two-dimensional electron gas like channel a high concentration and decent mobility was formed through the shallow implantation of Si into <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 (−201) nanomembrane integrated on highly thermal conductive...
Properties of minority carrier (electron) traps in Schottky type p-GaN gate high electron mobility transistors were explicitly investigated by optical deep level transient spectroscopy (ODLTS). By temperature-scanning ODLTS, three traps, namely, E1, E2, and E3, revealed, together with activation energy, capture cross section, trap concentration. A thermally accelerated electron-releasing process was quantitatively studied Laplace ODLTS individual emission time constant disclosed. At 300 K,...
We report radio-frequency (RF) MOSFETs with a two-dimensional-electron-gas-like (2DEG-like) channel formed at the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> surface through low-energy implantation of Si and rapid thermal activation process. The shallowly...
In this Letter, we report on the enhanced radio frequency (RF) performance in sub-micrometer scaled β-Ga2O3 tri-gate FinFETs. With a 200-nm-thick bulk channel and 0.35 μm gate length, FinFETs exhibit an improved current-gain cutoff of 5.4 GHz maximum oscillation 11.4 GHz, which are 20% 58% with respect to planar counterpart, respectively. The RF results from control capability suppressed short-channel effects, as evidenced by pinch-off characteristics, transconductance, output conductance....
Abstract The paper reports high-performance enhancement-mode MOS high-electron mobility transistors (MOS-HEMTs) based on a quaternary InAlGaN barrier. Self-aligned gate technology is used for recessing, dielectric deposition, and electrode formation. An improved digital recessing process developed, an Al 2 O 3 grown with plasma used. Compared to results AlGaN barrier, the fabricated E-mode MOS-HEMT barrier delivers record output current density of 1.7 A/mm threshold voltage ( V TH ) 1.5 V,...
RF power characteristics of hydrogen-terminated diamond metal-insulator-semiconductor field-effect transistors operating at 10 GHz have been reported, and an output density 182 mW/mm has achieved. The devices were fabricated by using a self-aligned process combined with 0.1 μm gate-length T-shaped gates. A high quality atomic layer deposition Al2O3 film low leakage current was deposited as gate dielectric H2O the oxidant temperature 90 °C. direct measured applying voltage in opposite...
Low-noise amplification performance of an enhancement-mode p- GaN gate high electron mobility transistor (HEMT) is thoroughly investigated. Featuring a tungsten (W) metal and CMOS-compatible contacts to source/drain terminals, the device exhibits positive threshold voltage 2.7 V. Low leakage current density ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{I}_{\text {G}}{)}$...
AlGaN/GaN high-electron-mobility transistor (HEMT) structures with two and three Al-containing step-graded AlGaN buffer layers (BLs) were grown on silicon (111) substrates by metal organic chemical vapor deposition. Considerable tensile stress was observed in the GaN only 0.8 µm BLs, while a large in-plane compression 2.3 BLs. The reverse gate leakage current HEMT BLs approximately 0.1 µA/mm, which more than one order of magnitude smaller that for A three-terminal off-state breakdown voltage...
The mechanism of hydrogen-terminated (H-terminated) single-crystal and polycrystalline diamond metal-oxide field-effect transistors (MOSFETs) is investigated in this letter. In order to characterize the complicated p-type surface layer H-terminated MOSFETs, both acceptors C-H dipole effect are considered our model. Simulated hole distribution band bending used illustrate operation region. results by using proposed model match well with measured I-V transfer characteristics these two kinds...
Abstract This paper presents the temperature dependence of small signal performance GaN‐on‐diamond high electron mobility transistors (HEMTs) at an ambient range from 0°C to 125°C. The influence on parasitic resistances together with intrinsic parameters is investigated, and coefficients these are extracted measured data. For comparison, a GaN‐on‐SiC device also investigated. These results important for development application HEMT technology.
We have demonstrated a novel method of depositing ALD-Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /PECVD-SiO bi-layer dielectric to passive the surface channels hydrogen-terminated diamond (H-diamond). After Al /SiO passivation, current increased with time and then tended be saturated. Afterwards, it became much more stable showed larger than an unpassivated counterpart. The...
The total ionizing dose effect of Mg-doped p-GaN gate stack have been investigated in this Letter on the whole voltage swing arranging from −1.3 to +1.5V. Additionally, two distinct kinds mechanisms trap effects extracted, which are response turns three phases mechanism, voltage-controlled, coexist voltage/current-controlled and current-controlled. It indicates that fast traps located at p-GaN/AlGaN interface (ET is about 0.295–0.333 eV), while slow AlGaN/GaN 0.393–0.485 eV). They both...
In this article, the hydrogen-terminated diamond metal-oxide-semiconductor field effect transistors (MOSFETs) which can operate at high frequency of 10 GHz are demonstrated. The devices were fabricated with a 50 nm Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> gate insulator and 350 Si N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> passivation layer, is compatible process...
Monolithically integrated enhancement/depletion (E/D)‐mode AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS‐HEMTs) are being developed for high‐speed mixed‐signal applications. Partially recessed gate combined with buffered insulator produce remarkably improved trade‐off between the threshold voltage (1.4 V) and current density (848 mA mm −1 ) in E‐mode device. Record peak transconductances of 311 248 obtained D‐ MIS‐HEMTs, respectively. A direct‐coupled FET...
A high-performance enhancement-mode (E-mode) gallium nitride (GaN)-based metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) that employs a 5-nm-thick aluminum (Al0.3Ga0.7N) as barrier layer and relies on silicon (SiN) passivation to control the 2DEG density is presented. Unlike SiN passivation, oxide (Al2O3) by atomic deposition (ALD) AlGaN surface would not increase in heterointerface. ALD Al2O3 was used gate insulator after depletion etching of region. The E-mode...
Threshold voltage analysis can help reveal the reliability of semiconductor transistors and its underlying mechanism. Herein, negative constant stress (NCVS)-induced threshold instability is studied in hydrogen-terminated diamond metal-oxide-semiconductor field-effect (HD MOSFETs) with an Al2O3 dielectric layer deposited via atomic deposition at 90 °C. An unusual bidirectional shift (Vth) be observed time. When a weak gate NCVS applied, Vth gradually decreases during first 500 s but...
Mechanisms of trap effects are crucial to improving diamond-based transistor electrical performance. Here, the in hydrogen-terminated diamond metal–oxide–semiconductor field-effect transistors (HD MOSFETs) investigated by separating gate dielectric bulk alumina (BA) and substrate (DS) for first time. First, location traps their impact on dynamic drain current characterized pulsed <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">...