A5010047420- Ga2O3 and related materials
- Semiconductor materials and devices
- ZnO doping and properties
- Diamond and Carbon-based Materials Research
- Electronic and Structural Properties of Oxides
- GaN-based semiconductor devices and materials
- Metal and Thin Film Mechanics
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Photocatalysis Techniques
- Silicon Carbide Semiconductor Technologies
- Radio Frequency Integrated Circuit Design
- Crystallization and Solubility Studies
- Electrocatalysts for Energy Conversion
- Graphene research and applications
- X-ray Diffraction in Crystallography
- Food Chemistry and Fat Analysis
- Photonic and Optical Devices
- Advanced Photonic Communication Systems
- Heat Transfer and Optimization
- Textile materials and evaluations
- Coffee research and impacts
- Multiferroics and related materials
- Fuel Cells and Related Materials
- Advanced battery technologies research
- Neural Networks and Reservoir Computing
Nanjing Tech University
2025
Nanjing University
2020-2024
Anhui University
2024
Northeast Forestry University
2024
Nanjing Institute of Technology
2019-2023
Institute of Electronics
2023
Huzhou University
2023
University of Electronic Science and Technology of China
2023
Yangtze River Delta Physics Research Center (China)
2023
First Affiliated Hospital of Xiamen University
2023
Avalanche and surge robustness involve fundamental carrier dynamics under high electric field current density. They are also prerequisites of any power device to survive common overvoltage overcurrent stresses in electronics applications such as vehicles, electricity grids, renewable energy processing. Despite tremendous efforts develop the next-generation devices using emerging ultra-wide bandgap semiconductors, lack effective bipolar doping has been a daunting obstacle for achieving...
A high frequency hydrogen-terminated diamond metal-insulator-semiconductor field-effect transistor (MISFET) with extremely small source-drain distance of about 350 nm was realized by self-aligned process on (001)-oriented single crystal substrate. To suppress the gate leakage current, a low temperature Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> film deposited as insulator...
Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> power diodes with high voltage/current ratings, superior dynamic performance, robust reliability, and potentially easy-to-implement are a vital milestone on the electronics roadmap. In this letter, better tradeoff between fast reverse-recovery rugged surge-current capability has been demonstrated in NiO/Ga p-n heterojunction (HJDs)....
In this Letter, high-performance β-Ga2O3 vertical heterojunction barrier Schottky (HJBS) diodes have been demonstrated together with the investigation of reverse leakage mechanisms. HJBS configurations, NiO/β-Ga2O3 p-n heterojunctions and p-NiO field limiting rings (FLRs) are implemented by using a reactive sputtering technique at room temperature without intentional etching damages. Determined from temperature-dependent current-voltage characteristics, mechanism diode is identified to be...
The technical progress of Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> power diodes is now stuck at a critical point where lack performance evaluation and reliability validation the system-level applications seriously limits their further development even future commercialization. In this letter, by implementing beveled-mesa NiO/Ga p–n heterojunction (HJDs) into 500-W factor...
Identifying defects/traps is of vital importance for the implementation high-performance Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> power devices. In this work, majority and minority carrier traps in beta-gallium oxide ( <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga ) have been investigated...
Impacts of spatial charge inhomogeneities on carrier transport fluctuations and premature breakdown were investigated in Schottky ampere-class Ga2O3 power diodes. Three prominent electron traps detected epilayers by a combination the depth-resolved capacitance spectroscopy profiling gradual dry etching. The near-surface trap occurring at 1.06 eV below conduction band minimum (EC), named E3, was found to be confined within 180 nm surface region epilayers. Two bulk EC − 0.75 (E2*) 0.82 (E2)...
In this Letter, we demonstrate a large-area (1-mm2) beveled-mesa p-NiO/β-Ga2O3 bipolar heterojunction diode (HJD) with high Baliga's figure of merit 1.84 (2.87) GW/cm2 from DC (pulsed) measurements. Benefiting the suppression electric field crowing at designed mesa edge and current conductivity modulation, resultant device exhibits advantageous characteristics, including low subthreshold slope 65 mV/decade, differential specific on-resistance 2.26 (1.45) mΩ cm2, density 2 kA/cm2, breakdown...
In this letter, we report 9-mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diodes (SBDs) with a thin-body thickness of 70 <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> . By implementing substrate thinning strategy and dual...
Abstract Platinum (Pt) supported on high surface area carbon has been the most widely used electrocatalyst in proton exchange membrane fuel cell (PEMFC). However, conventional supports are susceptible to corrosion at potentials, leading severe degradation of electrochemical performance. In this work, titanium carbonitride embedded mesoporous nanofibers (m‐TiCN NFs) reported as a promising alternative address issue. Benefiting from interpenetrating conductive pathways inside one‐dimensional...
We report on high-performance solar-blind photodetectors fabricated the m-plane <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\alpha $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> epilayer grown by laser molecular beam epitaxy using segment target approach. Benefited from improved epitaxial quality with an...
Surface treatment after dry etching is vital to enhance the surface quality of material and thus improve device performance. In this Letter, we identified majority states induced by β-Ga2O3 optimized treatments suppress these electrically active defects with improved performance Schottky barrier diodes. Transient spectroscopies suggested that traps (EC-0.75 eV) related divacancies (VGa-VO) were enhanced in concentration 3.37 × 1014 cm-3 reduced 0.90 combined means oxygen annealing piranha...
In this Letter, the trap inhomogeneity within β-Ga2O3 is correlated with conversion of Shockley–Read–Hall (SRH) recombination in NiO/β-Ga2O3 p+–n heterojunction diodes. For virgin epi-wafer, both near-surface traps E2 (EC-0.82 eV) and E3 (EC-1.11 bulk E2* (EC-0.76 are identified by a transient capacitance analysis, corresponding forward current–voltage characteristics diodes well fitted framework field-dependent SRH recombination. The rates for E2, E3, determined to be 1.3 × 107, 8.6 108,...
High power performance InAlGaN/GaN high electron mobility transistor (HEMT) as a candidate for and frequency amplifiers has been demonstrated versus the conventional AlGaN/GaN HEMT by using same device processes. Comparing with its counterpart, exhibits much larger output current density of 1.94 A/mm due to higher 2-D gas 2.0 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> cm xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> thin...
In this work, we demonstrated the self-powered solar-blind photodetector based on a polyaniline/α-Ga2O3 hybrid heterojunction. The resultant device exhibited distinct self-power characteristics with peak photoresponsivity (R) of 8.2 mA/W, UVC (UV light wavelength range at 200–280 nm)/UVA 320–400 nm) rejection ratio (R220 nm/R400 2.97 × 104, and response decay time (τdec) 176 μs zero bias. With an elevated bias to 5 V, dark current remained in ultralow level 0.21 pA, while τdec were improved...
Power Schottky barrier diodes (SBDs) face an inherent trade-off between forward conduction loss and reverse blocking capability. This limitation becomes more severe for ultra-wide bandgap (UWBG) SBDs due to the large junction field. A high is usually required suppress leakage current at price of increased voltage drop (VF). work demonstrates a Ga2O3 (JBS) diode that employs embedded p-type NiO grids move peak electric field away from junction, thereby allowing use ultra-low TiN contact. JBS...
The gate reliability of p-GaN AlGaN/GaN high electron mobility transistors with a ring-gate structure is investigated by step-stress experiments under bias, combined electroluminescence imaging and pulsed measurements. For stress (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Gstress</sub> ) from 0 to 13 V, the drain current found be stable decreases at V OFF-state increases ON-state. 31 ON-state, whereas...
In this work, vertical NiO/Ga2O3 heterojunction diodes (HJDs) integrated with SiNx/Al2O3 double-layered insulating field plate (FP) structures have been demonstrated. With the additional post-annealing, resultant diode exhibits a decreased differential specific on-resistance (Ron,sp) of 5.4 mωcm2 and an enhanced breakdown voltage (BV) 1036 V. The improved performance is attributed by combination FP-suppressed crowding electric at device edge reduced trap density interface. particular,...
Heterointegrated Ga2O3-on-SiC radio-frequency (RF) MOSFETs with record-high frequency performances were reported. A two-dimensional electron gas like channel a high concentration and decent mobility was formed through the shallow implantation of Si into <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 (−201) nanomembrane integrated on highly thermal conductive...
We report radio-frequency (RF) MOSFETs with a two-dimensional-electron-gas-like (2DEG-like) channel formed at the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> surface through low-energy implantation of Si and rapid thermal activation process. The shallowly...
Abstract Persistence of leukemic stem cells (LSCs) is one the determining factors to acute myeloid leukemia (AML) treatment failure and responsible for poor prognosis disease. Hence, novel therapeutic strategies that target LSCs are crucial success. We investigated if targeting Bcl-2 peroxisome proliferator activated receptor α (PPARα), two distinct cell survival regulating mechanisms could eliminate LSCs. This study demonstrate inhibitor venetoclax combined with PPARα agonist chiglitazar...