In this Letter, high-performance β-Ga2O3 vertical heterojunction barrier Schottky (HJBS) diodes have been demonstrated together with the investigation of reverse leakage mechanisms. HJBS configurations, NiO/β-Ga2O3 p-n heterojunctions and p-NiO field limiting rings (FLRs) are implemented by using a reactive sputtering technique at room temperature without intentional etching damages. Determined from temperature-dependent current-voltage characteristics, mechanism diode is identified to be...

Epitaxial film quality is critical to the success of high-performance α-Ga2O3 vertical power devices. In this work, origins threading dislocation generation and annihilation in thick films heteroepitaxially grown on sapphire by mist-CVD technique have been examined means high-resolution X-ray diffraction transmission electron microscopies. By increasing nominal thickness, screw dislocations exhibit an independent characteristic with a low density about 1.8 × 106 cm−2, while edge propagating...

This study provides insights into the application of biomechanics and digital twin technology in smart agriculture its contribution to achieving goal carbon neutrality context economy. The analyses construction crop growth models, design optimisation agricultural machinery, improvement soils, reports on role monitoring production processes, optimal allocation resources, early warning prevention disasters. results show that integration innovation these two technologies play an important...

Abstract Successful spin injection into graphene makes it a competitive contender in the race to become key material for quantum computation, or spin-operation-based data processing and sensing. Engineering ferromagnetic metal (FM)/graphene heterojunctions is one of most promising avenues realise it, however, their interface magnetism remains an open question up this day. In any proposed FM/graphene spintronic devices, best opportunity transport could only be achieved where no magnetic dead...

Ultrathin films of magnetite $({\text{Fe}}_{3}{\text{O}}_{4})$ have been grown epitaxially on wurtzite wide bandgap semiconductor GaN(0001) surfaces using molecular-beam epitaxy. Reflection high-energy electron-diffraction patterns show a (111) orientation the ${\text{Fe}}_{3}{\text{O}}_{4}$ and in-plane epitaxial relationship ${⟨1\overline{1}0⟩}_{{\text{Fe}}_{3}{\text{O}}_{4}}\ensuremath{\parallel}{⟨11\overline{2}0⟩}_{\text{GaN}}$...

To search for half-metallic materials spintronic applications, instead of using an expensive trial-and-error experimental scheme, it is more efficient to use first-principles calculations design first, and then grow them. In particular, a priori information the structural stability effect spin–orbit interaction (SOI) enables experimentalists focus on favorable properties that make growing half-metals easier. We suggest acoustic phonon spectra best way address promising materials....

Epitaxial lateral overgrowth (ELO) is an effective strategy to achieve metastable phased α-Ga2O3 with low dislocation densities, which desirable for developing ultralow-loss and ultrahigh power devices, whereas the involved dynamics have not been fully exploited. In this Letter, we investigated propagations reactions in micropillar arrays selectively grown by halide vapor phase epitaxy technique. Screw dislocations micropillars from selective area (SAE) ELO mode exhibited independent...

For half-Heusler alloys, the general formula is XYZ, where X can be a transition or alkali metal element, Y another typically Mn Cr, and Z group IV element pnicitide. The atomic arrangements within unit-cell show three configurations. Before this study, most of predictions half-metallic properties alloys at lattice constants differing from their optimized constant. Based on electropositivity electronegativity for we found that one configurations LiCrS exhibits its constant 5.803Å, has...

In this paper we report the phononic transport and its influence on thermal conductance in a one-dimensional random $n$-mer system. Based an elastic wave equation, studied frequency spectrum, transmission, conductivity of Multiple resonant transmissions are observed, which originate from delocalization phonons correlated disorder At each mode, zero-Lyapunov exponent undecayed vibration atoms have been found through whole chain. Meanwhile channels opened for phonon transmission heat...

The direction of VP can be flipped by manipulating the layer alignment without reversing magnetization substrate. We suggest that hybridization between bands WSSe and substrate plays an important role.

Higher-order topological insulators (HOTIs) have emerged as unique materials hosting corner or hinge states. This work investigates terahertz (THz) higher-order states in ${C}_{3}$ symmetric valley photonic crystals (VPCs) theory and experiment. Based on numerical simulations of band structure, phase profiles, Berry curvature, we realize the transition by rotating scatterers unit cells. Meanwhile, topology VPCs is characterized nontrivial bulk polarization. The are demonstrated calculated...

Magnetotransport properties of modulation-doped Al0.22Ga0.78N/GaN heterostructures were investigated by means magnetoresistance measurements at low temperatures and high magnetic fields. Strong Shubnikov–de Haas oscillations with the double periodicity are observed. The mobility spectrum is obtained, which demonstrates that mobilities two-dimensional electron gas (2DEG) in two subbands triangular quantum well heterointerface. It found 2DEG second subband much higher than first one. This...

The current-induced motion of magnetic domain walls (DWs) confined to nanostructures is great interest for fundamental studies as well technological applications in spintronic devices. Here, we present images showing the depinning properties pulse-current-driven well-shaped Permalloy nanowires obtained using photoemission electron microscopy combined with x-ray circular dichroism. In vicinity threshold current density (Jth = 4.2 × 10(11) A.m(-2)) DW motion, discontinuous and have been...

Ultrafine silicon quantum wires with high-quality Si/SiO2 heterointerfaces are successfully fabricated by utilizing anisotropic wet chemical etching and subsequent thermal oxidation. It is also found that the lateral dimensions of can be well controlled selecting temperature oxidation process. The cross-sectional image from a scanning electron microscope shows high quality linewidth down to 20 nm.

In this Letter, we report on the evolution of electronic properties governed by epitaxial misfit strain in cubic In2O3 epilayers grown sapphire. At elevated growth temperature, competition between film/substrate lattice mismatch and thermal expansion alters macroscopic biaxial from compressive to tensile. Simultaneously, electron concentration is tuned degeneration non-degeneration density below Mott criterion. The observed surface accumulation metal-insulator transition result oxygen...

Heteroepitaxy of corundum-structured α-Ga2O3 and intriguing ferroelectric κ-Ga2O3 is proven as an alternative strategy to solve current challenges in heat dissipation large-scale productivity for Ga2O3-based power electronic devices, whereas the fundamental growth dynamics phase control metastable Ga2O3 are still far unexplored. In this Letter, we demonstrate strain engineering situ manipulation by embedding α-In2O3 submicrometer dots. Phase transition modulated surface coverage due...

We theoretically studied the magnetostatic excitation in self-similar antiferromagnetic(AF)/nonmagnetic(NM) multilayers, where AF and NM layers were arranged a Thue-Morse sequence. The dispersion relation of spin waves precession amplitude total magnetization achieved. It is shown that distribution eigenfrequencies possesses two bands dual structures each subband presents hierarchical feature. states finite system can be categorized to three types: critical subband, extended band, localized...

In this work, we investigate the emission of nano-hole array in an ultrathin silver film at infrared regime. It is shown that when incident light illuminates array, localized surface plasmons are excited and serve as electric dipoles. The presents a strong directivity. maximum radiation located regime, it can be tuned by period incidence angle polarization excitation light. These findings extend our understandings optical property metallic nano-structures provide unique way to achieve...

We investigate spin-dependent bandgap structures and spin filtering in graphene with multiple ferromagnetic barriers. Using the transfer matrix method, we have calculated transmission coefficients, polarization, conductance, electronic energy spectra of systems. It is shown that spinup spindown electrons possess different structures. As a result, full polarization can be achieved within several separated zones. The width zone effectively manipulated by adjusting exchange field....

We theoretically investigate spin-dependent transport in quasiperiodic cascade junctions of a ferromagnetic metal (FM) and semiconductor (SC), where FM SC are arranged the Fibonacci sequence. It is shown that spin-up spin-down electrons possess different bandgap structures against Rashba spin-orbit wave vector. The structure has hierarchical characteristic present self-similarity. Due to quasiperiodicity, multiple resonant transmissions for or can be observed within bandgap; thereafter, spin...

Within the Landauer framework of ballistic transport, we theoretically investigate spin-dependent resonant transmission and magnetoresistance in symmetric cascade junctions ferromagnetic metal (FM) semiconductor (SC). It is shown that spin-up spin-down electrons possess different bandgap structures against Rashba spin-orbit wave vector. Due to mirror symmetry, multiple perfect transmissions can be obtained within bandgap, thereafter, spin polarization has reversals. Around each vector, high...