A5070626801- Diamond and Carbon-based Materials Research
- Semiconductor materials and devices
- Metal and Thin Film Mechanics
- Electronic and Structural Properties of Oxides
- Advancements in Semiconductor Devices and Circuit Design
- Nanowire Synthesis and Applications
- Analytical Chemistry and Sensors
- Semiconductor materials and interfaces
- Advanced Surface Polishing Techniques
- Nonlinear Optical Materials Studies
- Integrated Circuits and Semiconductor Failure Analysis
- Gold and Silver Nanoparticles Synthesis and Applications
- Ferroelectric and Negative Capacitance Devices
- ZnO doping and properties
- Ion-surface interactions and analysis
- Carbon Nanotubes in Composites
- Optical Coatings and Gratings
- Force Microscopy Techniques and Applications
- Ga2O3 and related materials
- Ultrasonics and Acoustic Wave Propagation
- Laser Material Processing Techniques
- Skin Protection and Aging
- Transition Metal Oxide Nanomaterials
- Laser-induced spectroscopy and plasma
- Photovoltaic Systems and Sustainability
Xi'an Jiaotong University
2008-2024
Pennsylvania State University
2005
An enhancement-mode hydrogen-terminated diamond field-effect transistor (FET) is realized by using a low work function gate material, namely, lanthanum hexaboride (LaB <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> ). The reason for the enhancement mode should be that electrons in LaB layer flow into two-dimensional hole gas (2DHG) channel and compensate holes, such shut down. threshold voltages (V...
In this study, a NiO/diamond UV-photodetector has been fabricated and investigated. A single crystal diamond (SCD) layer was grown on high-pressure-high-temperature Ib-type substrate by using microwave plasma chemical vapor deposition system. NiO films were deposited directly the reactive magnetron sputtering technique in mixture gas of oxygen argon onto SCD layer. Gold patterned as electrodes to form metal-semiconductor-metal which shows good repeatability 2 orders magnitude UV/visible...
A normally OFF hydrogen-terminated diamond (H-terminated diamond) field-effect transistor (FET) has been successfully achieved with Ti/TiO<sub><i>x</i></sub> gate materials. 5-nm Ti film was deposited on H-terminated by electron beam evaporation technique and then it thermally oxidized in air at 120 °C for 10 h to form Ti/TiO<sub><i>x</i></sub>, which confirmed X-ray photoelectron spectroscopy. The threshold voltage of FET is −0.14 V <inline-formula> <tex-math...
The rapid growth of the crystalline silicon (Si) photovoltaic industry has led to a steady increase in production waste (wSi) generated during cutting Si ingots....
Fabrication of single crystal hydrogen-terminated diamond MOSFET with dielectrics LiF/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> has been successfully carried out. After patterning source and drain electrodes, 60nm LiF/20nm Al were deposited as dielectrics. The output transfer characteristics investigated, indicating the typical p-type channel MOSFET. on/off ratio was ~10 <sup...
Fabrication of hydrogen-terminated diamond (H-diamond) field-effect transistor (FET) with AlOx dielectric layer has been successfully carried out. The was formed by auto-oxidizing 6 nm Al film in the air at room temperature, and a FET without also fabricated for comparison. For both FETs, 100 layers were deposited as gate electrodes, respectively. leakage current density four magnitude orders lower than that VGS = -5 V, indicating could effectively reduce prevent reverse ID - VDS caused...
A small subthreshold swing (SS) hydrogen-terminated diamond field-effect transistor is realized by using a wide bandgap material (SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ). Results showed an SS of 106.4 mV/dec, which should be ascribed to the low interface state density (1.05 <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times10$ </tex-math></inline-formula> <sup...
A normally off hydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field effect transistor (MOSFET) is realized by using lanthanum oxide (La2O3) gate dielectric. The threshold voltage demonstrated to be −0.797 V, indicating that the La2O3-gated H-diamond MOSFET has characteristics. mode could greatly ascribed low work function of La2O3. Based on capacitance–voltage (C–V) curves, dielectric constant La2O3 calculated as high 25.6. Moreover, small hysteresis extracted from C–V...
In this work, we demonstrate a hydrogen-terminated diamond (H-diamond) field-effect transistor (FET) with Al2O3/CeB6 gate materials. The CeB6 and Al2O3 films have been deposited by electron beam evaporation technique, sequentially. For the 4/8/12/15 μm length (LG) devices, whole devices distinct p-type normally off characteristics, all threshold voltage are negative; absolute values of leakage current density 10−4 A/cm2 at VGS −11 V, exhibiting relatively low compared FETs, further...
Investigation of ohmic contact between iridium (Ir) film and hydrogen-terminated single crystal diamond has been carried out with annealing temperature from 300 to 600 °C in argon (Ar) hydrogen ambient. Electrodes were deposited on by electron beam evaporation technique, specific resistivity measured transmission line model. The interface Ir was characterized microscopy energy dispersive X-ray spectroscopy. Theoretical calculation value barrier height around -1.1 eV. All results indicate...
In this study, a Ti-diamond-Ti structured ultraviolet photodetector was fabricated on homoepitaxial diamond layer with an oxygen-terminated surface. The properties of the Ti/diamond schottky contact were measured using X-ray photoelectron spectroscopy, and barrier height found to be 1.15 eV. At bias 3 V, responsivity at 210 nm only 4.29 mA/W, while 12 increased rapidly 51 mA/W. increase can ascribed photocurrent gain. With further in voltage, avalanche effect produced, could reach 1.18 A/W...
The solution processed method has been wildly used in the thin film fabrication because of advantages low cost, high efficiency, large scale for production, and long-term stability. In this paper, a normally-off hydrogen-terminated diamond field-effect transistor (FET) realized by using SnO2 (sp-SnO2) as an insulator layer. X-ray photoelectron spectroscopy results demonstrated stoichiometry sp-SnO2 film, which shows good properties with leakage current density less than 2.1 × 10−5 A·cm−2 at...
A normally- OFF field effect transistor (FET) with 20-nm yttrium (Y) gate material directly deposited on hydrogen-terminated (H-terminated) diamond surface has been successfully fabricated and characterized. The threshold voltage’s absolute value ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert {V}_{TH}\vert $ </tex-math></inline-formula> ) varies from 1.62 to 2.12 V the variation of different...
In this study, diamond pseudo-vertical architecture Schottky barrier diodes (PVSBDs) through the patterning tungsten growth method have been investigated. The forward current density is 16 A/cm2 at 5 V, and a rectification ratio more than orders of magnitude ±5 V for PVSBD. reverse breakdown voltage 640 corresponding electrical field 4.57 MV/cm. These results are obtained by (W) on surface as blocking layer growing epitaxial uncovered zone. A W/diamond ohmic contact was formed during...