A5010795996- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Ga2O3 and related materials
- ZnO doping and properties
- Silicon Carbide Semiconductor Technologies
- Advanced Photocatalysis Techniques
- Semiconductor Quantum Structures and Devices
- Gas Sensing Nanomaterials and Sensors
- Metal and Thin Film Mechanics
- Energy Harvesting in Wireless Networks
- Nanowire Synthesis and Applications
- Semiconductor materials and interfaces
- Advancements in Semiconductor Devices and Circuit Design
- Wireless Power Transfer Systems
- Radio Frequency Integrated Circuit Design
- Analytical Chemistry and Sensors
- 2D Materials and Applications
- Copper-based nanomaterials and applications
- Electronic and Structural Properties of Oxides
- Superconducting and THz Device Technology
- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- Microwave Engineering and Waveguides
- Diamond and Carbon-based Materials Research
- Photocathodes and Microchannel Plates
Jiangnan University
2021-2025
Xidian University
2018-2023
University of Nottingham Ningbo China
2023
Tokushima University
2012-2021
China XD Group (China)
2018-2021
Shenzhen University
2016-2020
Hanshan Normal University
2020
Institute of Microelectronics
2017-2018
Hebei Semiconductor Research Institute
1996-2016
Xi'an Jiaotong University
2016
Abstract Soft, capacitive tactile (pressure) sensors are important for applications including human–machine interfaces, soft robots, and electronic skins. Such capacitors consist of two electrodes separated by a dielectric. Pressing the capacitor brings closer together thereby increases capacitance. Thus, sensitivity to given force is maximized using dielectric materials that have high constant, yet such properties often in conflict with each other. Here, liquid metal elastomer foam (LMEF)...
Abstract In this work, a water splitting photoanode composed of BiVO 4 thin film surface modified by the deposition rhodium (Rh)‐doped SrTiO 3 perovskite is fabricated, and Rh‐doped outer layer exhibits special photoelectrochemical (PEC) oxygen evolution co‐catalytic activity. Controlled intensity modulated photo‐current spectroscopy, electrochemical impedance other results indicate that Rh on provide an oxidation active site during PEC process reducing reaction energy barrier for oxidation....
Abstract Liquid metal (LM)‐based soft and wearable sensors have great potential for applications in human motion monitoring human‐machine interfaces. To avoid smearing of exposed LM, it is necessary to encapsulate LM with elastomers, which decreases the breathability results discomfort even skin irritation. solve this problem, work proposes a breathable encapsulated foam (BELMF)‐based stress sensor. By using two polydimethylsiloxane layers, BELMF‐based sensor achieves non‐smearing...
Abstract The burgeoning need for extensive data processing has sparked enthusiasm the development of a novel optical logic gate platform. In this study, junction field‐effect phototransistors based on molybdenum disulfide/Germanium (MoS 2 /Ge) heterojunctions are constructed as units. This device demonstrates positive photoresponse that is attributed to photoconductivity effect occurring upon irradiation with visible (Vis) light. Under illumination near‐infrared (NIR) optics wavelengths...
Monolayer W x Mo 1− S 2 ‐based field effect transistors are demonstrated for the first time on monolayer flake, which is grown by chemical vapor deposition method under an atmospheric pressure. Detailed material studies using Raman and photoluminescence measurements have been carried out as‐grown . Electronic band structure of has calculated first‐principle theory. The thermal stability evaluated Raman‐temperature measurement. Carrier transport study fabricated FETs analyzed...
In this paper, we report the formation of vertical GaN Schottky barrier diodes (SBDs) on a 2-in. free-standing (FS) wafer, using CMOS-compatible contact material. By realizing an off-state breakdown voltage VBR 1200 V and on-state resistance Ron 7 mΩ·cm2, FS-GaN SBDs fabricated in work achieve power device figure-of-merit 2.1 × 108 V2·Ω−1·cm−2 high quality wafer. addition, show highest Ion/Ioff current ratio ∼2.3 1010 among reported literature.
Edge dislocation on WO<sub>3</sub>nanosheet can induce a crystal face heterojunction system to promote the separation efficiency of photogenerated carrier.
Oxygen vacancy on semiconductor has been usually considered as donor contributor which can improve the charge transfer capacity of photoanode. However, oxygen also found to perform recombination center for photogenerated charges. Herein, electrochemical reduction method is employed treat surface Mo‐doped BiVO 4 (BiMoVO) Experimental data indicate that when potential located at −0.8 V (vs Ag/AgCl), quasioxygen formed (020) facet (only BiO bonds crack), electron mobility and...
Abstract Periodical silver nanoparticle (NP) arrays were fabricated by magnetron sputtering method with anodic aluminum oxide templates to enhance the UV light emission from ZnO surface plasmon resonance effect. Theoretical simulations indicated that wavelength depended on diameter and space of Ag NP arrays. By introducing 40 nm 100 nm, photoluminescence intensity near band-edge was twofold enhanced. Time-resolved measurement energy band analysis enhancement attributed coupling between...
A metal/n-Ga2O3/p-diamond heterojunction diode with superior high-temperature performance was demonstrated in this work. The p-type diamond lightly boron doped, and the Ga2O3 film grown via atomic layer deposition without intentional doping. forward current density increased temperature, while reverse decreased at elevated temperatures. This behavior attributed to distinct carrier ionization dynamics across varying temperature ranges. Under high voltage stress, remained relatively stable, no...
Abstract The multiple exciton generation (MEG) effect, which produces photo‐generated charge carriers from a single high‐energy photon absorption by semiconductor with narrow bandgap, has the potential to revolutionize photovoltaic, photoelectric detection, and other technologies. Here, this work finds that surface carbon‐modified wide‐bandgap photoanode hierarchical quantum structure can drive photoelectrochemical reaction efficiency exceeding 145% first time. More studies reveal presence...
By introducing the AlInGaN/AlGaN quaternary system as an active region, we fabricated UV light-emitting diode (LED) with emission wavelength of 348 nm. The optical power is 1 mW at injection current 50 mA under a bare-chip geometry, which highest report among UV–LEDs around 350 nm grown on sapphire substrate. It means that such LEDs high enough to be used in practical application. In contrast it, similar UV–LED based GaN/AlGaN region has been also grown, whose less than AlInGaN/AlGaN-based...
GaN Schottky barrier diodes (SBDs) with low turn-on voltage are developed for microwave rectification. The reactively-sputtered TiN electrodes have a lower compared the Ni electrode, while on-resistance, reverse leakage current, and breakdown characteristics comparable to each other. Theoretically, SBDs can enhance efficiency of rectenna circuit at 2.45 GHz from 84% 89% when decreases 1.0 0.5 V.
FTO–BiVO<sub>4</sub>–W–WO<sub>3</sub> photoanode is fabricated in this study.
TiN/GaN Schottky barrier diodes with different anode diameters are fabricated to investigate the temperature sensing mechanism. All circular present good stability over a range of 25 °C-200 °C. In fully turn-on region, sensitivity increases increasing diameter. Furthermore, highest 1.22 mV/K is obtained for 300-μm-diameter device at current 20 mA, taking into account series resistance. subthreshold forward (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
p-NiO/n-GaN heterostructure diodes with different anode diameters were fabricated and comprehensively characterized for temperature sensor application. The circular NiO presented good stability in the range from 25 to 200 °C. It is found that sensitivity significantly influenced by series resistance ideality factor at fully-turn-on state. A of 2.58 mV/K was achieved device a diameter 100 μm (at 20 mA) decreased increasing area. In sub-threshold region, forward voltage current density also...