A5059769849- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- Nanowire Synthesis and Applications
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Gas Sensing Nanomaterials and Sensors
- Energy Harvesting in Wireless Networks
- Analytical Chemistry and Sensors
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Photocatalysis Techniques
- Wireless Power Transfer Systems
- Semiconductor Quantum Structures and Devices
- Acoustic Wave Resonator Technologies
- Copper-based nanomaterials and applications
- Ammonia Synthesis and Nitrogen Reduction
- Advanced Sensor Technologies Research
- Covalent Organic Framework Applications
- Transition Metal Oxide Nanomaterials
- Advanced Sensor and Energy Harvesting Materials
- Advanced Measurement and Detection Methods
- Scientific Research and Discoveries
- Advanced Optical Sensing Technologies
- Diamond and Carbon-based Materials Research
Shenzhen University
2020-2023
Institute of Microelectronics
2022-2023
University of Nottingham Ningbo China
2023
Hanshan Normal University
2020-2022
Tokushima University
2017-2021
Changchun University of Science and Technology
2015
In the present study, a novel normally-off vertical GaN MOSFET with an enhanced AlGaN/GaN channel on sidewall has been proposed using technology computer-aided design (TCAD) simulation. By selective area growth process, trench structure and are formed simultaneously, which is beneficial to enhance conduction capability compared conventional trenched MOSFET. It demonstrates that proper hole concentration thickness of p-GaN layer key parameters balance threshold voltage, on-state resistance,...
FTO–BiVO<sub>4</sub>–W–WO<sub>3</sub> photoanode is fabricated in this study.
TiN/GaN Schottky barrier diodes with different anode diameters are fabricated to investigate the temperature sensing mechanism. All circular present good stability over a range of 25 °C-200 °C. In fully turn-on region, sensitivity increases increasing diameter. Furthermore, highest 1.22 mV/K is obtained for 300-μm-diameter device at current 20 mA, taking into account series resistance. subthreshold forward (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
p-NiO/n-GaN heterostructure diodes with different anode diameters were fabricated and comprehensively characterized for temperature sensor application. The circular NiO presented good stability in the range from 25 to 200 °C. It is found that sensitivity significantly influenced by series resistance ideality factor at fully-turn-on state. A of 2.58 mV/K was achieved device a diameter 100 μm (at 20 mA) decreased increasing area. In sub-threshold region, forward voltage current density also...
Temperature sensor using series GaN Schottky barrier diode (SBD) with TiN anode was fabricated and evaluated extensively. The presents good characteristics in a wide temperature range from 25 °C to 200 °C. dependent forward voltage of the conventional 8-finger SBD at fixed current shows linearity, resulting sensitivity approximately 1.14 mV/K. On other hand, two diodes enhances by nearly times. enhancement is interpreted model, obtained parameters are comparable SBD.
In this letter, AlGaN/GaN heterojunction metal-insulator-semiconductor field-effect transistors with gate-first process were developed for normally-off operation p-GaN cap layers and SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> dielectrics. To avoid the effect of annealing on gate, a low-temperature ohmic contact technique was at an temperature about 500 °C 20 min in N xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ambient....
Vertical GaN Schottky barrier diode was fabricated as temperature sensor by using a thermally stable TiN anode. The current-voltage characteristics of the measured at various present zero-temperature coefficient (ZTC) bias point approximately 0.6 V. At voltage below ZTC (sub-threshold region), forward fixed current decreases linearly with increasing temperature, resulting in sensitivity 1.3 mV/K. In reversely biased region, leakage also presents temperature-dependent behavior 19.7 mA/K...
This article presents a finger-type gallium nitride (GaN) Schottky barrier diode (SBD)-based microwave rectifier with medium-power capacity and wide power bandwidth. A complete solution including SBD design fabrication, model extraction, circuit optimization, demonstration is proposed. The anode critical thickness epitaxial layer techniques are adopted to reduce the GaN resistance 1.9 Ω (0.011 m · cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Graphene quantum dot modified g-C<sub>3</sub>N<sub>4</sub> composite photocatalysts were prepared and their photocatalytic ammonia oxidation performances studied.
A normally- OFF AlGaN/GaN high-electron-mobility transistor (HEMT) with p-GaN gate was fabricated on free-standing GaN substrate. The self-terminated etching technology achieved by combining AlN stop layer and SF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> -based gas. Compared HEMT Si substrate (Si-HEMT), the (GaN-HEMT) demonstrated higher current density, lower subthreshold swing (SS), drain leakage current, static dynamic...
GaN Schottky barrier diode (SBD) temperature sensors with TiN, Ni, and NiN anodes were fabricated in this study to evaluate the effect of anode material inhomogeneous interface on sensitivity. The temperature-dependent current–voltage curves negatively shift increasing temperature, presenting a slight behavior. Compared Ni anode, TiN suppress inhomogeneity. sensitivity obtained from sub-threshold region follows same tendency for all SBDs, which increases decreasing current level....
AlGaN/gallium nitride (GaN) ion-sensitive field-effect transistors (ISFETs) were fabricated as pH sensors. The sensitivity of the AlGaN/GaN ISFETs was evolved with gate recess process and ammonium hydroxide (NH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> OH) treatment. By performing process, threshold voltage (V xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) ISFET increased from -3.33 to -0.31 V maximum conductance (G...
Abstract In this paper, AlN films grown by magnetron sputtering method have been proposed as the gate insulator layer of AlGaN/GaN high electron mobility transistors (HEMTs) to decrease leakage current and suppress interface trap. The effect temperature substrate on quality investigated. By inserting thin film (35 nm) a layer, on-state resistance HEMTs from 11.1 Ω mm 10.3 @ V g = 0 V, collapse decreases 16.6% 3.2%, can be reduced 1.2 × 10 −1 A 4.4 −6 2 five orders magnitude, fast states...
This study investigates the effect of helium-implanted edge termination (ET) on GaN-on-GaN Schottky barrier diode (SBD) temperature sensors. Devices with and without ET three different diameters are fabricated characterized from 298 to 473 K. Based conventional calculation method, results show that sensitivity (Sm) device is lower than at same given current anode area. Technology Computer Aided Design (TCAD) simulation reveals can restrict a smaller area, resulting in larger actual density...