A5100318741- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- Nanowire Synthesis and Applications
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Perovskite Materials and Applications
- Gas Sensing Nanomaterials and Sensors
- Silicon Carbide Semiconductor Technologies
- Advanced Optical Network Technologies
- Integrated Energy Systems Optimization
- Analytical Chemistry and Sensors
- Advanced Combustion Engine Technologies
- IPv6, Mobility, Handover, Networks, Security
- Advanced Photonic Communication Systems
- Topological Materials and Phenomena
- Vehicle emissions and performance
- Energy Load and Power Forecasting
- Conducting polymers and applications
- Optimal Power Flow Distribution
- Electric Power System Optimization
- Microgrid Control and Optimization
- Optical Network Technologies
- Transition Metal Oxide Nanomaterials
- Smart Grid Energy Management
Harbin Medical University
2024
University of Electronic Science and Technology of China
2023-2024
North China Electric Power University
2024
Shanxi University
2023
State Key Laboratory of Quantum Optics and Quantum Optics Devices
2023
University of Nottingham Ningbo China
2023
Shenzhen University
2009-2023
Institute of Microelectronics
2022-2023
China Institute of Atomic Energy
2023
State Key Laboratory of Information Engineering in Surveying Mapping and Remote Sensing
2022
Perovskite solar cells (PSCs) based on sputtered nickel oxide (NiOx) hole transport layer have emerged as promising configuration due to their good stability, cost-effectiveness, and scalability. However, the adverse chemical redox reaction at NiOx/perovskite interface remains an ever-present problem that has not yet been well solved. To address this issue before, problems cation deprotonation iodide oxidation occurred in precursor solution easily result interfacial should be prevented....
The Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA) is commonly used as a co-hole transport layer in inverted perovskite solar cells (PSCs). It can effectively improve the hole capability of NiOx and obstruct interfacial...
TiN/GaN Schottky barrier diodes with different anode diameters are fabricated to investigate the temperature sensing mechanism. All circular present good stability over a range of 25 °C-200 °C. In fully turn-on region, sensitivity increases increasing diameter. Furthermore, highest 1.22 mV/K is obtained for 300-μm-diameter device at current 20 mA, taking into account series resistance. subthreshold forward (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
p-NiO/n-GaN heterostructure diodes with different anode diameters were fabricated and comprehensively characterized for temperature sensor application. The circular NiO presented good stability in the range from 25 to 200 °C. It is found that sensitivity significantly influenced by series resistance ideality factor at fully-turn-on state. A of 2.58 mV/K was achieved device a diameter 100 μm (at 20 mA) decreased increasing area. In sub-threshold region, forward voltage current density also...
Temperature sensor using series GaN Schottky barrier diode (SBD) with TiN anode was fabricated and evaluated extensively. The presents good characteristics in a wide temperature range from 25 °C to 200 °C. dependent forward voltage of the conventional 8-finger SBD at fixed current shows linearity, resulting sensitivity approximately 1.14 mV/K. On other hand, two diodes enhances by nearly times. enhancement is interpreted model, obtained parameters are comparable SBD.
In this letter, AlGaN/GaN heterojunction metal-insulator-semiconductor field-effect transistors with gate-first process were developed for normally-off operation p-GaN cap layers and SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> dielectrics. To avoid the effect of annealing on gate, a low-temperature ohmic contact technique was at an temperature about 500 °C 20 min in N xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ambient....
Vertical GaN Schottky barrier diode was fabricated as temperature sensor by using a thermally stable TiN anode. The current-voltage characteristics of the measured at various present zero-temperature coefficient (ZTC) bias point approximately 0.6 V. At voltage below ZTC (sub-threshold region), forward fixed current decreases linearly with increasing temperature, resulting in sensitivity 1.3 mV/K. In reversely biased region, leakage also presents temperature-dependent behavior 19.7 mA/K...
This article presents a finger-type gallium nitride (GaN) Schottky barrier diode (SBD)-based microwave rectifier with medium-power capacity and wide power bandwidth. A complete solution including SBD design fabrication, model extraction, circuit optimization, demonstration is proposed. The anode critical thickness epitaxial layer techniques are adopted to reduce the GaN resistance 1.9 Ω (0.011 m · cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
We characterize parallel double quantum dot Josephson junctions based on closely spaced nanowires bridged by in-situ deposited superconductors. The behavior occurs despite the proximity of two and potential risk nanowire clamping during growth. By tuning charge filling lead couplings, we map out Yu-Shiba-Rusinov phase diagram. Our quasi-independent two-wire hybrids show promise for realization exotic topological phases.
A normally- OFF AlGaN/GaN high-electron-mobility transistor (HEMT) with p-GaN gate was fabricated on free-standing GaN substrate. The self-terminated etching technology achieved by combining AlN stop layer and SF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> -based gas. Compared HEMT Si substrate (Si-HEMT), the (GaN-HEMT) demonstrated higher current density, lower subthreshold swing (SS), drain leakage current, static dynamic...
GaN Schottky barrier diode (SBD) temperature sensors with TiN, Ni, and NiN anodes were fabricated in this study to evaluate the effect of anode material inhomogeneous interface on sensitivity. The temperature-dependent current–voltage curves negatively shift increasing temperature, presenting a slight behavior. Compared Ni anode, TiN suppress inhomogeneity. sensitivity obtained from sub-threshold region follows same tendency for all SBDs, which increases decreasing current level....
AlGaN/gallium nitride (GaN) ion-sensitive field-effect transistors (ISFETs) were fabricated as pH sensors. The sensitivity of the AlGaN/GaN ISFETs was evolved with gate recess process and ammonium hydroxide (NH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> OH) treatment. By performing process, threshold voltage (V xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) ISFET increased from -3.33 to -0.31 V maximum conductance (G...
NiOx, prepared via the sputtering method, exhibits low conductivity and energy level mismatch with perovskite layer, thereby limiting further enhancements in performance of solar modules (PSMs). Unlike traditional methods that enhance NiOx through reactive or directly doping targets metal ions, both which incur high costs efficiency, we employ an evaporation method using LiF to achieve efficient low-cost NiOx. Compared pristine incorporation significantly increases Additionally, enhances...
Background Despite the success of immune checkpoint inhibitor (ICI)-based combination therapies in hepatocellular carcinoma (HCC), its effectiveness remains confined to a subset patients. The development reliable, predictive markers is important for accurate patient stratification and further mechanistic understanding therapy response. Methods We comprehensively analyzed paired single-cell RNA transcriptome T-cell repertoire profiles from 14 HCC ascites samples, collected 7 patients before...