Abstract To further improve the performance of all-inkjet-printing ZnO UV photodetector and maintain advantages inkjet printing technology, Ag nanoparticles (NPs) were deposited on for first time. The NPs can passivate surface defects work as plasmons from characterization photoluminescence (PL), X-ray photoelectron spectroscopy (XPS), finite difference time domain method (FDTD) simulation. normalized detectivity ( D * ) NP-modified detector reaches to 1.45 × 10 Jones at 0.715 mW incident...

AlGaN/GaN high-electron-mobility transistors (HEMTs) with various field-plate (FP) and gate-to-drain distance extensions are fabricated investigated. Experiments carried out on 20 transistors. Their ON-state resistance (RON), OFF-state breakdown voltage (VBR), RF performance, low-frequency noise measured studied. The FP extension is found to significantly improve the voltage. However, obviously weakens frequency response power added efficiency because it increases feedback C <sub...

A normally-OFF p-GaN gate AlGaN/GaN high-electron-mobility transistor with high on-state resistance (RON) uniformity was realized using a self-terminated digital etching technique. RON control improved by simultaneously an AlN stop layer in epitaxial design and novel procedure. Digital includes the multiple-cycle oxidation wet of layers provides easy removal depth surface damage reduction at gate-to-drain gate-to-source spacing areas. Low-frequency noise pulse measurements indicated that...

In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.17</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.83</sub> N/Al xmlns:xlink="http://www.w3.org/1999/xlink">0.3</sub> xmlns:xlink="http://www.w3.org/1999/xlink">0.7</sub> N barrier layers is proposed. Compared to the standard (STD) p-GaN/AlGaN/GaN HEMT structure,...

In this work, the dual junction-high-electron-mobility-transistor (DJ-HEMT) was investigated. The thin AlGaN grown between p-GaN gate and metal. TCAD simulations, band gap electric field were shown in letter, proving junction forming. Moreover, DJ-HEMT shows high voltage swing due to at region of device, which enhance performance. By contrast with standard HEMT (ST-HEMT), higher <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">...

Normally-off p-GaN gated AlGaN/GaN high electron mobility transistors (HEMTs) were developed. Oxygen plasma treatment converted a low-resistive layer in the access region to high-resistive GaN (HR-GaN); that oxygen used an AlN as diffusion barrier prevent further oxidizing of underlying AlGaN layer, and ensure was fully oxidized. Relative conventional HEMTs, these HEMTs with HR-GaN layers achieved lower drain leakage current 4.4 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...

This paper discusses the impact of back-gate bias on dc, low-frequency noise, and dynamic behavior characteristics a p-GaN gate high-electron mobility transistor silicon substrate. is investigated to understand physical mechanisms terminal modulation normally OFF GaN power devices. When negative backgate V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">B</sub> voltage applied, 2-D electron gas channel will get closer AlGaN/GaN heterointerface...

A normally- OFF AlGaN/GaN high-electron-mobility transistor (HEMT) with p-GaN gate was fabricated on free-standing GaN substrate. The self-terminated etching technology achieved by combining AlN stop layer and SF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> -based gas. Compared HEMT Si substrate (Si-HEMT), the (GaN-HEMT) demonstrated higher current density, lower subthreshold swing (SS), drain leakage current, static dynamic...

A metal-insulator-semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN insulator layer deposited through atomic deposition was investigated. favorable interface observed between the selected insulator, deposition-grown AlN, and GaN. conventional enhancement-mode device without layer, known as a Schottky (SG) p-GaN HEMT, also fabricated for comparison. Because of presence leakage threshold voltage MIS-HEMT improved more than those SG-HEMT did....

Photodetectors based on two-dimensional (2D) materials have attracted considerable attention because of their unique properties. To further improve the performance self-driven photodetectors van der Waals heterojunctions, a conductive band minimum (CBM) matched SnS 2 /WS heterojunction photodetector SiO /Si substrate has been designed. The device exhibits positive current at zero voltage under 365 nm laser illumination. This is attributed to built-in electric field interface and WS layer,...

A high power-added efficiency and low dynamic on-resistance (RON) AlGaN/GaN metal-insulator- semiconductor high-electron mobility transistor (MISHEMT) with in situ SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> insulator design was demonstrated on 150-mm silicon-on-insulator (SOI) substrate. Compared to traditional high-resistivity Si substrate, SiNx/AlGaN/GaN MISHEMT grown the SOI 5-μm-thick active layer performed better tensile...

This letter develops a thermally stable micromachined AlGaN/GaN high electron mobility transistor (HEMT) on an Si substrate with air-bridged heat redistribution layer design. After removal of the beneath HEMT, significant breakdown voltage improvement was observed. The drain and source terminals were arranged as matrix type. 3 μm-thick Au adopted for connection current proposed power cell. Compared traditional multi-fingers layout, density doubled. In addition, self-heating phenomenon cell...

This paper reports vertical Gallium nitride (GaN) PN diodes on free-standing GaN wafer using a complementary metal-oxide-semiconductor compatible contact materials. Static and switching current-voltage measurements have been carried out to evaluate the fabricated diodes. The diode in this shows turn-on voltage Von of ~3.3-3.4 V, on/off current ratio ~2.7 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> , ideal factor n ~2.1. reverse...

This work develops a thermally stable micromachined AlGaN/GaN high-electron mobility transistor (HEMT) with an enhanced breakdown voltage. After removal of the Si substrate beneath HEMT, 300-nm SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> and 20-μm copper layer are deposited to form GaN-on-insulator (G.O.I.) structure. The self-heating at high current that is exhibited by GaN HEMTs previously developed full methods eliminated....

In this work, depletion-mode magnesium doped zinc-oxide (MgZnO) channel thin film transistors (TFTs) with zirconium oxide (ZrO2) gate insulator were fabricated using radio frequency magnetron sputtering deposition. Sputtered MgZnO TFT layer performed an average transmittance of 90% and improved energy bandgap 5.02 eV after 700°C post annealing. X-ray photoelectron spectroscopy (XPS) results indicated that the binding Zn-O bonds Mg-O enhanced following increasing annealing temperatures. The...

In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN the QST device exhibited superior heat dissipation performance to Si because of higher thermal conductivity substrate. Thermal imaging analysis indicated that temperature variation 4.5 °C and 9.2 at drain-to-source current (IDS) 300 mA/mm following 50 s operation. Compared with HEMT device, lower IDS degradation high...

This study investigates the effects of thermal annealing on Al-doped MgxZn1−xO (AMZO) films. AMZO films were deposited by a radio-frequency magnetron sputtering system using 4 in. ZnO/MgO/Al2O3 (76/19/5 wt. %) target. measures and reports Hall results, x-ray diffraction (XRD), transmittance, photoelectron spectroscopy (XPS) data. XRD results show that ZnO (002) MgO2 wurtzite peaks in addition to (111)-cubic peak disappeared after 1000 °C annealing. indicates coexistence two phases as-grown...

A micromachined AlGaN/GaN high-electron-mobility transistor (HEMT) on a Si substrate with diamondlike carbon/titanium (DLC/Ti) heat-dissipation layers was investigated. Superior thermal conductivity and expansion coefficient similar to that of GaN enabled DLC/Ti efficiently dissipate the heat power HEMT through via holes. This DLC design also maintained stable current density at bending conditions (strain: 0.01%). Infrared thermographic imaging showed resistance standard multi-finger layer...

In this study, sputtered indium-tin-oxide (ITO) formed ITO/Au/ITO was used to form composite transparent gate InAlAs-InGaAs metamorphic HEMTs (CTG-MHEMT), with an optoelectronic mixer significantly markedly improved front-side optical coupling efficiency. The proposed CTG-MHEMT exhibits a high responsivity (λ = 1310 nm) of 1.71 A/W under optimal bias conditions. A -3 dB electrical bandwidth 400 MHz is produced by the photovoltaic effect and dominated long lifetime excess holes. associated...

In this study, a 50-nm Al0.05Ga0.95N back barrier (BB) layer was used in an AlGaN/GaN high-electron-mobility transistor between the two-dimensional electron gas channel and Fe-doped/C-doped buffer layers. This BB can reduce layer. The is affected by doped carriers conduction energy band Ion/Ioff ratio of device 4.66 × 105, for without 1.91 103. Lower leakage currents were obtained because higher band. 0.25-μm gate length with exhibited high current gain cutoff frequency 24.4 GHz, power 73 GHz.