A5102922361- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- GaN-based semiconductor devices and materials
- Advancements in Semiconductor Devices and Circuit Design
- Ga2O3 and related materials
- Semiconductor materials and interfaces
- Radio Frequency Integrated Circuit Design
- Radiation Effects in Electronics
- Thin-Film Transistor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Metamaterials and Metasurfaces Applications
- Quantum optics and atomic interactions
- Ferroelectric and Negative Capacitance Devices
- 3D IC and TSV technologies
- Plasmonic and Surface Plasmon Research
- Semiconductor Quantum Structures and Devices
- Electronic Packaging and Soldering Technologies
- ZnO doping and properties
- Advanced Memory and Neural Computing
- MXene and MAX Phase Materials
- Advanced Photocatalysis Techniques
China Electronics Technology Group Corporation
2010-2023
Fudan University
2020-2022
State Key Laboratory of ASIC and System
2020-2022
National Engineering Research Center of Electromagnetic Radiation Control Materials
2008-2010
State Key Laboratory of Electronic Thin Films and Integrated Devices
2008-2010
University of Electronic Science and Technology of China
2007
A novel high-voltage thin layer SOI technology based on 1-mum-thick silicon and 2-mum-thick buried oxide for driving color plasma display panels (PDP) has been developed. High-voltage pLDMOS with thick gate oxide, high- voltage nLDMOS, low-voltage CMOS are compatible LOCOS isolation. The proposed includes two aspects: first, an implantation after field (IFO) is developed achieving shallow junction depth of p-field region to avoid punch-through breakdown induced by back-gate (BG) effect...
Low-noise amplification performance of an enhancement-mode p- GaN gate high electron mobility transistor (HEMT) is thoroughly investigated. Featuring a tungsten (W) metal and CMOS-compatible contacts to source/drain terminals, the device exhibits positive threshold voltage 2.7 V. Low leakage current density ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{I}_{\text {G}}{)}$...
In order to achieve a high breakdown voltage (BV) and realize self-isolation in high-voltage ICs (HVICs), novel n-channel lateral double-diffused MOS (LDMOS) with buried n-island layer (BNIL) placed at the interface between p-type silicon-on-insulator (SOI) buried-oxide (BOX) (BNIL SOI) is proposed. Its mechanism investigated theoretically experimentally. blocking state, ionized donors depleted n-islands make electric field monotonously increase rather than decrease, as exhibited p-SOI...
The base component of radiation-hardened flash-based field-programmable gate arrays (FPGAs) is a reconfigurable memory cell, which reliable and has high driving current. A novel push-pull pflash cell was proposed in this article, combined the advantages indirect coupling radiation-hardening. device consisted two 2T-flash transistors pMOS transistor. successfully fabricated using 90 nm technology. Through floating (FG), overcame interference found sense-switch cells. Compared to conventional...
This paper presents the total dose radiation characteristics of high voltage LDMOS on SIMOX substrate using a radiation-hard 0.8 mu m SOI CMOS process. The performance is characterized by transistor threshold shifts, leakage currents. experimental results show that breakdown 38 V, shifts front channels are less than 300 mV and back channel greater 19 V at 1 Mrad(Si).
The effects of x-ray irradiation on the mechanically exfoliated quasi-two-dimensional (quasi-2D) β-Ga2O3 nanoflake field-effect transistors (FETs) under condition biasing voltage were systematically investigated for first time. It has been revealed that device experienced two stages during irradiation. At low ionizing doses (<240 krad), performance is mainly influenced by photo-effect and subsequent persistent photocurrent (PPC) effect as a result pre-existing electron traps (e-trap) in...
In this paper, the total ionizing dose (TID) effects of Sense-Switch pFLASH cell consisting sense (T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> ) and switch xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> co-floating gate transistors fabricated with a 0.13 μm eFLASH technology are studied. Firstly, impact TID on programming/erasing state's characteristics T1and T mainly analyzed though Current-Voltage (I-V)...
A 300 V thin layer SOI nLDMOS based on reduced surface electric field (RESURF) and multiple plates (MFP) is proposed in this paper. RESURF principle MFP technology are adopted to modulate the distribution improve breakdown voltage (BV). Device structure parameters discussed achieve a trade-off between on-resistance. Compared with conventional structures, achieved not only owns high BV, but also possesses simple manufacturing process low cost.
Graphene and vanadium dioxide (VO2) have been widely studied because of their flexibly tunable conductivity. In this study, a multilayer structure graphene disk VO2 square ring is investigated. The proposed exhibits an electromagnetically induced reflection (EIR) that caused by bright mode coupled with dark mode. Since the permittivity can be modulated chemical potential electron–phonon relaxation time, while temperature, EIR effect tuned time as well surrounding temperature. Therefore,...
Abstract A multilayer structure of a square ring graphene with nesting vanadium dioxide (VO 2 ) was investigated in this study. This exhibits electromagnetically induced transparency (EIT), which stems from bright mode coupling dark mode. The permittivity values and VO can be modulated via chemical potential temperature, respectively. EIT effect tuned based on the temperature , resulting dual-tunable effect. Simulation results confirmed that phenomenon is insensitive to polarization. These...
In this Letter, trapping effects of a Schottky lightly Mg-doped p-GaN gate stack for low-power applications have been investigated, and further analysis focusing on AlGaN/GaN interface traps under γ-ray irradiation has carried out. A negligible shift in the flatband voltage with dose up to 800 krad indicates superior radiation tolerance structure. The difference between capacitance dispersion at measurement frequency below above 500 kHz is observed, which attributed different locations...
The study on the uniformity of electrical performance large wafer-scale Hf0.5Zr0.5O2 (HZO) ferroelectric capacitors is lacking yet now. In this work, TiN/HZO/TiN metal-ferroelectric-metal (MFM) devices 12-inch Si wafer have been fabricated by thermal atomic layer deposition. Correlation thickness with device-to-device variation properties and yield MFM system were investigated. It was found that closely related to HZO system, concentration oxygen vacancies in micro-region film, phase...
Based on the basic theories of Poole Frenkel (P-F) emission, Fowler Nordheim (F-N) tunnel and Ohmic transport models, linear relationship between breakdown voltage (BV) leakage, I-V accelerated stress test (AST) characteristics a-Si dielectric layers are analyzed by manufactured metal-to-metal (MTM) anti-fuse cells in details. The effects different ion implant conditions amorphization degree films characterized X-Ray diffraction (XRD). Meanwhile, influence annealing process electrical...
A novel HV thin layer SOI technology based on 1.5-μm-thick silicon for negative power supply has been first proposed. field nLDMOS with thick gate oxide, pLDMOS oxide and LV CMOS are compatible shallow trench isolation. Gate source plates adopted to improve the breakdown characteristics of since it doesn't meet RESURF criterion. N-field junction depth is introduced eliminate channel discontinuity around "beak" region at side avoid punch-through induced by BG effect nLDMOS. The influences key...
In this paper, a fast transient response capacitor-less gallium nitride (GaN)-based LDO on the GaN smart power technology platform for integrated regulation application is first proposed. A proposed error amplifier (EA) with bootstrapping can effectively boost gain to 45 dB. By employing EA and regulator enhancement-mode HEMT, able achieve 22 MHz unit frequency load capacitor current ranging from 0 pF to10 250 μA 100mA, respectively. And short settling time (20 ns) 50–100 mA change in 10 ns...
Non-uniform thermal distribution affects about large periphery GaN HEMT based on through-via structure is analyzed in the paper. According to self-heating effect and heat dissipation issues of Si-based RF power devices, a high density technology employing by conducting near junction multi-gate finger device downward sink further put forward. Its corresponding placement provide novel path for spreading directly from source region each cell low temperature sink. From simulation with total gate...
The radiation characteristics of vertical GaN-on-GaN Schottky barrier diodes (SBD) by the bias +0.8 V and -5.0 have been investigated with four different doses total ionizing dose irradiation for first time. off-state current decreases ~99 % X-ray 80 krad due to trapping electrons at nitrogen vacancies height increases. above 160 increases owing effects induced carrier generation over occupation defect sites. leakage still reduces compared that pristine device even after 400 doses. Moreover,...
In this paper, a RF AlGaN/GaN high electron mobility transistor (HEMT) based on low voltage application of 5G handset, firstly fabricated high-resistive silicon substrate is introduced, which uses Ni/Au as T-shaped gate structure and double-layer silicide surface medium. The maximum output current density the device 1.07 A/mm at V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</inf> = 12 xmlns:xlink="http://www.w3.org/1999/xlink">gs</inf> 2...