By forming a highly stable Al2O3 gate oxide on C-H bonded channel of diamond, high-temperature, and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From room temperature to 400 °C (673 K), the variation maximum drain-current is within 30% at given bias. The breakdown voltage (VB) MOSFET without field plate 600 V gate-drain distance (LGD) 7 μm. We fabricated some MOSFETs for which VB/LGD > 100 V/μm. These values are comparable those lateral...

Diamond has unique physical properties, which show great promise for applications in the next generation power devices. Hydrogen-terminated (C-H) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) often have normally-on operation devices, because C-H channel features a p-type inversion layer; however, normally-off devices are preferable MOSFETs from viewpoint of fail safety. We fabricated hydrogen-terminated using partially oxidized (partial C-O) channel. The showed high...

This letter reports the small-signal and large-signal performances at high drain voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> ) ranging up to 60 V for a 0.5 μm gate length two-dimensional hole gas diamond metal-oxide-semiconductor field-effect transistor with 100-nm-thick atomic-layer-deposited Al xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> film on IIa-type...

Abstract Complementary power field effect transistors (FETs) based on wide bandgap materials not only provide high-voltage switching capability with the reduction of on-resistance and losses, but also enable a smart inverter system by dramatic simplification external circuits. However, p-channel FETs equivalent performance to those n-channel are obtained in any material other than diamond. Here we show that breakdown voltage more 1600 V has been diamond metal-oxide-semiconductor (MOS) FET...

Although the two-dimensional hole gas (2DHG) of a hydrogen-terminated diamond surface provides unique p-type conducting layer for high-performance transistors, conductivity is highly sensitive to its environment. Therefore, must be passivated preserve 2DHG, especially at high temperature. We temperature (450 °C) without loss C-H bonds by atomic deposition (ALD) and investigated thermal reliability Al2O3 film. As result, were preserved, accumulation effect appeared after ALD with H2O as an...

Use of two-dimensional hole gas (2DHG), induced on a hydrogenated diamond surface, is solution to overcoming one demerits diamond, i.e., deep energy levels impurities. This 2DHG affected by its environment and accordingly needs passivation film get stable device operation especially at high temperature. In response this requirement, we achieved the high-reliability forming an Al2O3 surface using atomic-layer-deposition (ALD) method with H2O oxidant 450 °C. The thus protected survived air...

Although a high breakdown voltage or field is considered as major advantage of diamond, there has been large difference in voltages fields diamond devices literature. Most these apparently contradictory results did not correctly reflect material properties because specific device designs, such punch-through structure and insufficient edge termination. Once data were removed, the remaining few results, including record-high 20 MV/cm, theoretically reproduced, exactly calculating ionization...

Abstract Power semiconductor devices require low on-resistivity and high breakdown voltages simultaneously. Vertical-type metal-oxide-semiconductor field-effect transistors (MOSFETs) meet these requirements, but have been incompleteness in diamond. Here we show vertical-type p-channel diamond MOSFETs with trench structures drain current densities equivalent to those of n-channel wide bandgap for complementary inverters. We use two-dimensional hole gases induced by atomic layer deposited Al 2...

Diamond is a promising material for power applications owing to its excellent physical properties. Two-dimensional hole gas (2DHG) diamond metal-oxide- semiconductor field-effect transistors (MOSFETs) with hydrogen-terminated (C-H) channel have high current densities and breakdown fields but often show normally-ON operation. From the viewpoint of safety, normally-OFF operation required applications. In this letter, we used ion implantation form shallow thin nitrogen-doped layer below C-H...

The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG is ubiquitously formed on C-H covered by atomic-layer-deposited-Al2O3. Using Al2O3 as gate oxide, metal oxide semiconductor field-effect transistors (MOSFETs) operate in trench structure where side-wall acts channel. MOSFETs with channel exhibit equivalent performance to lateral MOSFET without Here, vertical-type drain bottom demonstrated current...

We report two-dimensional hole gas (2DHG) diamond field-effect transistors (FETs) with microwave plasma chemical vapor deposition (MPCVD)-regrown p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">++</sup> (B concentration ~ 1 × 10 xmlns:xlink="http://www.w3.org/1999/xlink">22</sup> /cm xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> ) ohmic contacts. The heavily doped -diamond shows low contact resistance of 1.1 Q·mm, which is the lowest...

This article reports on the high operation voltage large-signal performance of two-dimensional hole gas diamond metal-oxide semiconductor field-effect transistors (MOSFETs) with thick atomic-layer-deposition (ALD)-Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> formed purity polycrystalline a (110) preferential orientation. MOSFETs 1- μm gate-length having gate oxide layer...

In this article, the normally- OFF oxidized Si-terminated (C–Si) diamond metal–oxide–semiconductor field-effect transistors (MOSFETs) with as-deposited 0.5-nm silicon on annealed at high temperature as subsurface p-channel were presented for first time. A novel method utilizing both a metal mask to realize regrown heavily boron-doped (001) layer (p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -diamond-first) and molecular beam...

AlN films formed on (0001) GaN by a plasma-enhanced atomic layer deposition (PEALD) method at 200 and 450 °C without remote-plasma pretreatment (RPP) were crystalline as epitaxially aligned with the substrate. Even 0.7-nm film high-temperature (HT, °C) PEALD suppressed bias instability of Al/Al2O3/AlN/GaN capacitors to practically negligible level. By contrast, improvement for low-temperature (LT, was quite limited. Although RPP not conducted, interface-state density HT-PEALD reduced 1.4 ×...

The SiO2/Si interface structure of thin oxide films thermally grown on Si(100), (111), and (110) surfaces under device processing conditions has been investigated using high-resolution photoemission spectroscopy with synchrotron radiation. intensity distribution the so-called suboxides, Si1+, Si2+, Si3+, displays a strong dependence crystallographic orientation substrate over oxidation temperature range from 600 to 900 °C; Si1+ is enhanced in Si(111) (110), while Si2+ larger than one...

Although HLA genes have been shown to be associated with certain diseases, the basis for this association is unknown. Recent studies, however, documented patterns of nucleotide sequence variation among some a particular disease. For rheumatoid arthritis, in most patients shared encoding key structural element an class II polypeptide; critical interaction molecule antigenic peptides and responding T cells, suggestive direct role disease susceptibility. We describe serological cellular...

A superconducting field-effect transistors (FET) with a 0.1- mu m-length gate electrode was fabricated and tested at liquid-helium temperature. Two electrodes (source drain) were formed on the same Si substrate surface an oxide-insulated by self-aligned fabrication process. Superconducting current flowing through semiconductor (Si) between two (Nb) controlled gate-bias voltage.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

The Al2O3 film formed using an atomic layer deposition (ALD) method with trimethylaluminum as Al precursor and H2O oxidant at a high temperature (450 °C) effectively passivates the p-type surface conduction (SC) specific to hydrogen-terminated diamond surface, leading successful operation of SC field-effect transistors 400 °C. In order investigate this excellent passivation effect, we carried out isotope analysis D2O instead in ALD found that conventional (100 incorporates 50 times more CH3...

More than 1600V breakdown voltages have been obtained in hydrogen terminated (C-H) diamond planar p-channel MOSFETs with gate-drain distance of 16-22 μm. The drain current density exceeds 100mA/mm the FETs. blocking voltage and characteristics are comparable to those n-channel AlGaN/GaN FETs SiC a similar device size. Atomic layer deposited Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O...

We present a miniaturized vertical-type twodimensional hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistor (MOSFET) by adopting gate-source overlapping structure. developed 2-μm-wide trench and disposed part of the gate electrode to overlap Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> insulator film on source eliminate space between electrode. obtained...

Transient transfection experiments indicated (i) that E6 protein of non-cancer-associated cutaneous human papillomavirus type 1 (HPV-1) can inhibit p53-mediated transcriptional transactivation in both p53-deficient cells (H358) and normal rat (3Y1), but those cancer-associated HPV-5, -8, -47 cannot do so either H358 or 3Y1 cells, (ii) proteins HPV-16 -18 the p53 function not cells.

The variation of device characteristics is a challenge to present and future large-scale integrations. One the origins line width roughness (LWR). To facilitate efforts cope with LWR, we developed method accurately characterize LWR basing on analysis power spectral densities (PSDs). Because experimental PSDs are intrinsically discrete, derive simple analytic formulas discrete by assuming that autocorrelation function (ACF) exponentially decays distance. calculated using agree excellently...

We accurately project the blocking capability of diamond junctions with a punch-through design, carrying out ionization integration that adopts our previous coefficients and hence explicitly giving breakdown voltage field as function doping concentration length drift layers. Comparing to this result, we assess various reported in literature find most these results fall short projections more than little but few them fit closely or approximately ours outperform theoretical others are based on...

We activated source/drain junctions of complementary metal oxide semiconductor (CMOS) by simply replacing rapid thermal annealing (RTA) in the conventional production flow non-melt laser spike (LSA). did not form any additional layers, unlike annealing. The 50-nm gate CMOS devices thus formed had overwhelmingly better V th roll-offs and larger drain currents compared to those RTA. found that LSA-devices without offset spacers performance than with spacers, optimization overlap length between...