A5015378208- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Diamond and Carbon-based Materials Research
- Metal and Thin Film Mechanics
- Radio Frequency Integrated Circuit Design
- GaN-based semiconductor devices and materials
- HVDC Systems and Fault Protection
- Ferroelectric and Negative Capacitance Devices
- Nanowire Synthesis and Applications
- Electronic and Structural Properties of Oxides
- Semiconductor Quantum Structures and Devices
- Semiconductor Lasers and Optical Devices
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
Mitsubishi Electric (Japan)
2023-2024
Waseda University
2020-2022
Hole concentration of 2-D hole gas (2DHG) on (110) diamond is higher than that other faces, making it the best choice for power device application. Detailed analysis atomic layer deposition (ALD) Al<sub>2</sub>O<sub>3</sub>/(110) C–H interface structure vital importance. MOSFETs with thin (10 nm) and thick (100 ALD Al<sub>2</sub>O<sub>3</sub> were made in this study. The microstructure was analyzed. Abrupt Al<sub>2</sub>O<sub>3</sub>/C–H observed through high resolution...
We report two-dimensional hole gas (2DHG) diamond field-effect transistors (FETs) with microwave plasma chemical vapor deposition (MPCVD)-regrown p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">++</sup> (B concentration ~ 1 × 10 xmlns:xlink="http://www.w3.org/1999/xlink">22</sup> /cm xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> ) ohmic contacts. The heavily doped -diamond shows low contact resistance of 1.1 Q·mm, which is the lowest...
This article reports on the high operation voltage large-signal performance of two-dimensional hole gas diamond metal-oxide semiconductor field-effect transistors (MOSFETs) with thick atomic-layer-deposition (ALD)-Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> formed purity polycrystalline a (110) preferential orientation. MOSFETs 1- μm gate-length having gate oxide layer...
This report presents a distributed model with high scaling accuracy for GaN HEMTs up to 100 GHz. Using the model, RF voltage V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">grf_i</inf> (i = 1, 2, …, 8) at each gate terminal of N intrinsic transistor models in finger was simulated. The simulation revealed that amplitude and phase differences were larger GHz than 30 GHz, when inductance increased. results also showed more sensitive gain...
Abstract Drain bias dependence of Y 22 and 21 signals has been investigated by two-port network measurement at the on-state condition AlGaN/GaN high electron mobility transistors (HEMTs). for Fe-related trap in GaN layers self-heating effect. a unique signal otherwise than with same drain as signals. This is considered to originate from AlGaN using device simulation trap, The peak frequency traps increases increasing voltages, while doesn’t depend on voltages.
A C-Ku band GaN monolithic microwave integrated-circuit (MMIC) low-noise amplifier (LNA) for a transmitter and receiver module was developed. frequency-selective parallel feedback circuit is proposed to achieve broadband performance low noise figure (NF). The makes stabilization possible at an out-of-band frequency provides favorable NF gain characteristics in the band. It features inductor, which resonates series with drain–source capacitance of transistor near maximum operation frequency....
2020 International Conference on Solid State Devices and Materials ,1.2 A/mm Drain Current Density 1.1 Ω mm Lowest Contact Resistance for 2DHG Diamond MOSFETs Using High Concentration Selective Regrowth B-doped