A5003005196- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Ga2O3 and related materials
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- ZnO doping and properties
- Radio Frequency Integrated Circuit Design
- Semiconductor Quantum Structures and Devices
- Gas Sensing Nanomaterials and Sensors
- Traditional Chinese Medicine Studies
- Electronic and Structural Properties of Oxides
- Plant-based Medicinal Research
- Machine Learning in Materials Science
- Quantum and electron transport phenomena
- Traditional Chinese Medicine Analysis
- Analytical Chemistry and Sensors
- Advanced Chemical Sensor Technologies
- Conducting polymers and applications
- Quantum Dots Synthesis And Properties
- Perovskite Materials and Applications
- Acoustic Wave Resonator Technologies
- Ferroelectric and Negative Capacitance Devices
- Thermal Expansion and Ionic Conductivity
- Carbon and Quantum Dots Applications
- Copper Interconnects and Reliability
CSIRO Manufacturing
2023-2025
Data61
2023-2025
Commonwealth Scientific and Industrial Research Organisation
2023-2025
UNSW Sydney
2019-2023
University of Electronic Science and Technology of China
2015-2023
Nanchang Institute of Technology
2022
National Engineering Research Center of Electromagnetic Radiation Control Materials
2015-2020
National University of Singapore
2018
Jilin University
2006-2010
Nanjing University
2008
Abstract The rapid growth of Internet Things (IoT) devices necessitates efficient data compression techniques to manage the vast amounts they generate. Chemiresistive sensor arrays (CSAs), a simple yet essential component in IoT systems, produce large datasets due their simultaneous multi‐sensor operations. Classical principal analysis (cPCA), widely used solution for dimensionality reduction, often struggles preserve critical information complex datasets. In this study, self‐adaptive...
An efficient approach to engineering the Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /GaN positive interface fixed charges by post-dielectric annealing in nitrogen is demonstrated. The remarkable reduction of from 1.44 × 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> 3 xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> cm...
A small amount of methoxide additive is found to effectively induce preferential adsorption anions ( i.e. , TFSI − and NO 3 ) on the surface Li metal anode, contributing an inorganic-rich SEI enabling stable batteries.
Due to its excellent material performance, the AlGaN/GaN high-electron-mobility transistor (HEMT) provides a wide platform for biosensing. The high density and mobility of two-dimensional electron gas (2DEG) at interface induced by polarization effect short distance between 2DEG channel surface can improve sensitivity biosensors. thermal chemical stability also benefit HEMT-based biosensors’ operation under, example, temperatures chemically harsh environments. This makes creating biosensors...
The small size and excellent integrability of silicon metal-oxide-semiconductor (SiMOS) quantum dot spin qubits make them an attractive system for mass-manufacturable, scaled-up processors. Furthermore, classical control electronics can be integrated on-chip, in-between the qubits, if architecture with sparse arrays is chosen. In such are either transported across chip via shuttling or coupled mediating systems over short-to-intermediate distances. This paper investigates charge...
The semiconductors industry benefits greatly from the integration of machine learning (ML)-based techniques in technology computer-aided design (TCAD) methods. performance ML models, however, relies heavily on quality and quantity training datasets. They can be particularly difficult to obtain semiconductor due complexity expense device fabrication. In this article, we propose a self-augmentation strategy for improving ML-based modeling using variational autoencoder (VAE)-based techniques....
In this Letter, we investigate the threshold voltage (VTH) instability of Schottky p-GaN gate high electron mobility transistors (SP-HEMTs) under high-frequency operation by a resistive-load hard switching method. The abnormal VTH is observed, which different between fully and partially depleted SP-HEMTs (FD- PD-HEMTs). Notably, for FD-HEMT, shifts positively with effective stress time. However, in PD-HEMT more complex. At low VGS (e.g., 3 V) 6 V), time consistently. Nevertheless, at...
In this work, an ontology-based model for AI-assisted medicine side-effect (SE) prediction is developed, where three main components, including the drug model, treatment and of proposed are presented. To validate ANN structure established trained by two hundred forty-two TCM prescriptions. These data gathered classified from most famous ancient book, more than one thousand SE reports, in which attributions, hot cold, introduced to evaluate whether prescription will cause or not. The results...
Gallium nitride (GaN) devices have been successfully commercialized due to their superior performance, especially high-power transformation efficiency. To further reduce the power consumption of these devices, optimization for ohmic contacts is attracting more and attention. In light mature powerful machine learning (ML) techniques, this work provides a novel method evaluate fabrication processes in AlGaN/GaN heterojunction, n-type, p-type GaN, by establishing regression-based model. The...
In this research, we address the urgent need for accurate prediction of in-hospital survival periods patients diagnosed with pancreatic cancer (PC), a disease notorious its late-stage diagnosis and dismal rates.Utilizing machine learning (ML) technologies, focus on application Variational Autoencoders (VAE) data augmentation ensemble techniques enhancing predictive accuracy.Our dataset comprises biochemical blood test (BBT) results from stage II/III PC patients, which is limited in size,...
A class of novel tunable light-emission-diode (LED)-compatible current regulator, including the reverse blocking and conducting device, is proposed by integrating p-GaN cap with a voltage nanosensor on AlGaN/GaN platform. Verified experimentally calibrated simulation, it feedback sensor that stabilizes depletion region biased p-GaN/AlGaN/2-DEG junction, which contributes to clamping effectively. Compared devices only or cannot perform regulation. Moreover, investigated varying p-type...
A novel enhancement-mode vertical GaN field effect transistor (FET) with 2DEG for reducing the on-state resistance (RON) and substrate pattern (SP) enhancing breakdown voltage (BV) is proposed in this work. By deliberately designing width height of SP, high concentrated electric (E-field) under p-GaN cap could be separated without dramatically impacting RON, turning out an enhanced Baliga's Figure-Of-Merits (BFOM, BV2/RON). Verified by experimentally calibrated ATLAS simulation, device a...
In this paper, input capacitance (CISS) of p-GaN gate AlGaN/GaN power high-electron-mobility transistors (HEMTs) is systemically investigated. CISS includes gate-to-source (CGS) and gate-to-drain (CGD). comparison with the normally-on HEMTs, it found that phenomenon variation different in commercial HEMTs. The unique charge storage effect typical layer adopted discussed to explain establish underlying mechanism. Owing depletion holes, net negative charges are induced under an off-state drain...
In this article, a dynamic charge storage mechanism is proposed for designing the p-GaN gate high-electron-mobility transistor (DCS-HEMT) with ultralow switching loss. The device features p-doped DCS layer in AlGaN buffer. When DCS-HEMT turning off, net negative charges significantly contribute to depletion of 2-D-electron-gas (2DEG) channel, leading low turn-off loss (${E} _{OFF}$ ). During turn-on process, reduction amount could accelerate formation electrons at 2DEG which results _{ON}$...
Abstract An analytical model considering the buffer acceptor traps is presented in this paper to study gate control capability p-GaN AlGaN/GaN high-electron-mobility transistors (HEMTs). Through applying Gauss’ law from layer two-dimensional-electron-gas (2DEG) channel GaN layer, contributions of trap concentration ( N A ) and energy level E T are obtained for calculating voltage V G dependent 2DEG density n S threshold TH performance. It suggested that deep great importance capability....
Ethnopharmacological relevance: Novel coronavirus disease (COVID-19) outbroke in Wuhan has imposed a huge influence onto the society term of public heath and economy. However, so far, no effective drugs or vaccines have been developed. Whereas, Traditional Chinese Medicine (TCM) considered as promising supplementary treatment for owing to its clinically proven performance on many diseases even like severe acute respiratory syndrome (SARS). Meanwhile, side-effect (SE) reports suggest SE TCM...
In this paper, we realize high-accuracy side-effect prediction of Traditional Chinese Medicine Compound Prescription by introducing network embedding and deep learning. A random walk that could efficiently interpret the information in prescription is established from a conventional Bag-of-Word network. After validation network, highest accuracy reaches 0.908 where simple five-layer artificial neural implemented, rendering method promising for other medicines with similar structure such as...
Though separate studies on the individual properties of photovoltage and magnetoresistance (MR) have made much progress, work integrating two phenomena into one kind structure has not been reported so far. This study combines MR lateral (LPV) in a magnetic oxidized film Co3Mn2O deposited an n-type Si substrate with native ultrathin SiO2 surface by sputtering. The effective resistance shows marked transition for temperature around 240 K. Both negative {MR = [R(H) -R(0)]/R(0) × 100%} - 11% at...
In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with local charge compensation trench (LCCT) is designed and optimized. Because the negative plasma-etching process, as well relaxing lattice during process would introduce equivalent charges into under-LCCT region, will be partially squeezed out from area. The electric field (E-field) around region therefore redistribute smoothly. Owing to this, proposed LCCT-HEMT performs better in...