A5083817678- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Electromagnetic Compatibility and Noise Suppression
- GaN-based semiconductor devices and materials
- HVDC Systems and Fault Protection
- Electrostatic Discharge in Electronics
- Multilevel Inverters and Converters
- Semiconductor materials and interfaces
- Chemical Synthesis and Characterization
- Ga2O3 and related materials
- Extraction and Separation Processes
- Radioactive element chemistry and processing
- Radio Frequency Integrated Circuit Design
- Silicon and Solar Cell Technologies
- Semiconductor Quantum Structures and Devices
- Advanced DC-DC Converters
- Gas Sensing Nanomaterials and Sensors
- Nuclear materials and radiation effects
- Layered Double Hydroxides Synthesis and Applications
- Thin-Film Transistor Technologies
- Advancements in Battery Materials
- Radiation Effects in Electronics
- Advanced ceramic materials synthesis
- Nuclear Materials and Properties
University of Electronic Science and Technology of China
2016-2025
National Engineering Research Center of Electromagnetic Radiation Control Materials
2015-2024
State Key Laboratory of Electronic Thin Films and Integrated Devices
2007-2024
Southwest University of Science and Technology
2022
Shanghai Electric (China)
2022
State Grid Corporation of China (China)
2021
Institute of Plasma Physics
2020
Chinese Academy of Sciences
2007-2020
Guangzhou University
2017-2018
Western University
2002
The reduced chip size and unipolar current conduction mechanism make silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) suitable for high-frequency power electronics applications. Modeling the switching process of SiC MOSFET with parasitic components is important achieving higher efficiency density system design. Therefore, this paper proposes a new concise yet accurate loss model MOSFETs. Addressing limitations in experimental measurements, numerical...
A silicon carbide (SiC) trench MOSFET (TMOS) with integrated three-level protection (TLP) Schottky barrier diode (SBD), named ITS-TMOS, is proposed and investigated by simulation. The device features the TLP-SBD that remarkably improves body characteristics while guarantees excellent fundamental performance of TMOS. In blocking state, P-base region, gate, P+ shield at bottom serve as TLP contact. Each assists in depleting drift region beneath Benefiting from self-assembled TLP, leakage...
In this article, commercially 1200-V asymmetric and double trench silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistors (mosfets) from two manufacturers are investigated by experiment finite-element simulation under single-pulse unclamped inductive switching (UIS) stress. The variation in avalanche time with mosfet energy temperatures dependence of critical maximum power dissipation evaluated. It is found that failure mechanisms identified, i.e., thermal runaway gate oxide...
A planar gate SiC MOSFET of hole extraction pillar combined with multilayer P-shield structure (HEMP-MOS) is proposed and characterized to improve single-event burnout (SEB) rupture (SEGR). The multiple layers are utilized reduce the peak heat power caused by strong electric field high current at P-base/drift junction. Therefore, maximum lattice temperature (hot spot) in HEMP-MOS limited because lower powers larger areas energy dissipation. SEB threshold voltage 850 V can be achieved a...
A silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) for 10-kV application is proposed in this paper, which features a built-in Schottky barrier diode (SBD). Therefore, the body free from activation during third quadrant conduction state, beneficial reducing switching loss and suppressing bipolar degradation. Numerical simulations with Sentaurus TCAD are carried out to investigate characteristics of structure comparison conventional MOSFET SBD pair. It found...
Due to the unipolar conduction mechanism, switching loss of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (mosfet) is reduced significantly when compared with insulated gate bipolar (IGBT). This enables use SiC mosfet in high-frequency application. However, could still thermally limit upper frequency. Further reduction mosfet, therefore, remains an open challenge for higher frequency applications. Based on in-depth revelation device physics process, accurate model...
In this article, the repetitive avalanche ruggedness of silicon carbide metal–oxide–semiconductor field-effect transistors (MOSFETs) with asymmetric trench (AT) and double (DT) structure is investigated experimentally. The different failure mechanisms, i.e., thermal-induced fatigue or field oxide breakdown for AT-MOSFET electric induced gate degradation DT-MOSFET, are verified by device decapsulation TCAD simulation. Different from transient in single-pulse test, under stress related to...
In this article, short-circuit capability prediction and failure mode of 1200-V-class SiC MOSFETs with a double asymmetric trench structure are proposed under single-pulse stress. A model is established to evaluate withstand time corresponding critical energy devices various dc bus voltages. This can provide quick predictive guidance even if there few test results, the predicted values consistent practical values. Furthermore, two modes investigated in test. For MOSFETs, gate damage at lower...
A novel planar gate SiC MOSFET embedding low barrier diode (LBD-MOSFET) with improved third quadrant and switching performance is proposed characterized in this letter. The LBD-MOSFET not only exhibits about 3 times lower turn on voltage than the body diode, but also successfully eliminates bipolar degradation phenomena. potential for electrons transporting from JFET region to N <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> source...
The short-circuit ruggedness and failure mechanism of a commercial silicon carbide (SiC) MOSFET with embedded Schottky barrier diode (SBD-MOS) are evaluated revealed in this article. Compared conventional planar-type SiC (C-MOS), distinctive difference phenomenon is observed for SBD-MOS under condition. When the withstanding time ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...
In this paper, a multiple-ring-modulated junction termination extension (MRM-JTE) technology for large-area silicon carbide PiN rectifier rated at 4500 V is proposed and experimentally investigated using standard two-zone JTE (TZ-JTE) process without extra steps or masks. Multiple modulation rings embedded inside region, which similar to varied lateral doping widely used in devices, form gradual decrease of effective charges the region. MRM combines advantages two techniques, namely,...
The loading of noble-metal nanoparticles (NPs) is an effective approach for the enhancement H2 sensing performances, although there have been rare reports focused on effect facets in performance. catalytic and adsorption performance nanocrystals mainly determined by their exposed facets, while gas sensors strongly correlated to reaction between gases sensor materials. Hence, it very important study different facets-exposed nanoparticles. In this study, a set shape-controlled Pd NPs prepared...
In this paper, an analytical switching loss model for a gallium nitride (GaN) based control switch (CS) and synchronous rectifier (SR) in low-voltage buck converters is proposed. Based on the consideration of parasitic inductances, SR reverse conduction voltage drop, overshoot current effect caused by output capacitance SR, total modeled with regard to both CS which can lead more accurate prediction power system efficiency converters. The modeling results show that percentage 25.4% 12-1.2-V...
Due to superior properties of silicon carbide (SiC), the unipolar conduction mechanism metal-oxide-semiconductor-field-effect transistor (MOSFET), and structural feature, double trench SiC MOSFETs have great potential be one next-generation power switches. In this article, an avalanche safe operation area (SOA) is established, a new failure behavior 1200-V MOSFET revealed timely through unclamped inductive switching (UIS) test (300 K initial temperature). With comprehensive analyses...
A novel high performance SiC asymmetric cell trench MOSFET with split gate (SG) and integrated junction barrier schottky (JBS) diode (SGS-ATMOS) is proposed for the first time. The shielding effect provided by SG structure not only reduces gate-drain capacitance ( C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gd</sub> ) but also alleviates electric field crowding in dielectric layer at corner. JBS bypasses PiN body while obtaining good...
This paper shows the electrostatic discharge (ESD) behavior of p-GaN HEMTs. Based on transmission line pulse (TLP) testing, ESD characteristics (stressed: drain versus source, gate, gate to substrate) are comprehensively evaluated, and we found following results: (1) HEMTs is most prone failure in events due typical metal/p-GaN structure, voltage for human body model (HBM) cannot meet 2 kV industry standard. (2) compared source with grounded floating less catastrophic degradation/failure...
The oxygen-defect engineering of ZnO-400 nanosheets to enhance their photocatalytic performance for U( vi ) reduction.